摘要:
Provided is an apparatus and method for use thereof. The apparatus, in one embodiment, includes first and second 1×N couplers integrated on a substrate and configured to receive an optical symbol having an intended time slot, N being at least three. The apparatus, in this embodiment, further includes N waveguide arms integrated on the substrate, having modulators and coupled between the first and second 1×N couplers. The apparatus, in this embodiment, additionally, includes a modulator controller configured to drive the modulators such that, following transmission over a distance, components of the optical symbol outside of the intended time slot are attenuated relative to components within the intended time slot.
摘要:
Various embodiments of the present invention are directed to color-center-based quantum computer architectures that are both scalable and defect tolerant and to methods for fabricating color-center-based quantum computer architectures. In one embodiment of the present invention, a node of a quantum computer architecture comprises a first photonic device configured to transmit electromagnetic waves, a color center embedded in diamond and coupled to the first photonic device, and a switch located between the first photonic device and a bus waveguide. The switch can be configured to selectively control transmission of electromagnetic waves between the bus waveguide and the color center.
摘要:
An apparatus having a topology that allows building complicated optical programmable arrays useful for manipulating the phase and/or amplitude of an optical signal. Sophisticated filtering and other optical signal processing functionality can be programmed into the array after a chip containing the array has been fabricated. This programming capability is analogous to that of electronic field programmable gate arrays (FPGA's). Apparatus described herein will provide a powerful tool for processing optical signals or very broadband electrical signals.
摘要:
An electro-optical modulator includes a structural substrate, having an insulating layer on top. A waveguide layer, disposed on the insulating layer. A curving resonant MOS device, disposed on the insulating layer and having an optical coupling region with the waveguide layer.
摘要:
Various embodiments of the present invention are directed to color-center-based quantum computer architectures that are both scalable and defect tolerant and to methods for fabricating color-center-based quantum computer architectures. In one embodiment of the present invention, a node of a quantum computer architecture comprises a first photonic device configured to transmit electromagnetic waves, a color center embedded in diamond and coupled to the first photonic device, and a switch located between the first photonic device and a bus waveguide. The switch can be configured to selectively control transmission of electromagnetic waves between the bus waveguide and the color center.
摘要:
The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalites including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.
摘要:
An optical switching method and apparatus. In one aspect of the present invention, the disclosed apparatus includes first and optical waveguides disposed in a semiconductor substrate layer. An insulating layer disposed between the first and second waveguides in a coupling region in the semiconductor substrate layer to isolate the first optical waveguide from the second optical waveguide. Modulated charge layers proximate to the insulating layer in the coupling region are employed to control an optical coupling strength between the first and second optical waveguides.
摘要:
The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalites including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.
摘要:
A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.
摘要:
A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.