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    Control of valley current in a unijunction transistor by electron irradiation
    11.
    发明授权
    Control of valley current in a unijunction transistor by electron irradiation 失效
    通过电子辐射控制单结晶体管中的谷值电流

    公开(公告)号：US4292644A

    公开(公告)日：1981-09-29

    申请号：US25870

    申请日：1979-04-02

    申请人： Hing C. Chu ,  Y. S. Edmund Sun

    发明人： Hing C. Chu ,  Y. S. Edmund Sun

    IPC分类号： H01L21/263 ,  H01L29/70 ,  H01L29/74

    CPC分类号： H01L29/705 ,  H01L21/263

    摘要： An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.

    摘要翻译： 具有增加的谷值电流的改进的单结晶体管的特征在于邻近发射极 - 基极结的局部较低寿命的区域。 通过器件的整体照射或更优选通过单独的接合区域的选择性照射来降低寿命。