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    Sige super lattice optical detectors
    12.
    发明申请
    Sige super lattice optical detectors 审中-公开
    超晶格光学检测仪

    公开(公告)号：US20050214964A1

    公开(公告)日：2005-09-29

    申请号：US10959599

    申请日：2004-10-06

    申请人： Lawrence West ,  Francisco Leon

    发明人： Lawrence West ,  Francisco Leon

    IPC分类号： H01L21/00 ,  H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/072 ,  H01L31/103 ,  H01L31/109 ,  H01L31/18

    CPC分类号： H01L31/03529 ,  B82Y20/00 ,  H01L31/035254 ,  H01L31/035281 ,  H01L31/1037 ,  H01L31/1812 ,  Y02E10/50

    摘要： An optical detector including a substrate; an island of detector material formed on the substrate, the island being a stack extending up from the substrate of alternating layers of first and second semiconductor materials, the island having a horizontally oriented top end, a vertically oriented first sidewall, and vertically oriented second sidewall that is opposite the first sidewall, the island having a first doped region extending into the island through first sidewall and forming a first conductive region that extends down into the island of detector material, the island also having a second doped region extending into the island through the second sidewall and forming a second conductive region that extends down into island of the detector material, the first and second conductive regions each having a top end that is part of the top end of the island; a first electrical connection to the top end of the first conductive region; and a second electrical connection to the top end of the second conductive region.

    摘要翻译： 一种包括基板的光学检测器; 形成在基板上的检测器材料的岛，该岛是从第一和第二半导体材料的交替层的衬底向上延伸的堆，该岛具有水平取向的顶端，垂直取向的第一侧壁和垂直取向的第二侧壁 所述岛具有通过第一侧壁延伸到岛中的第一掺杂区域，并且形成向下延伸到探测器材料岛的第一导电区域，该岛还具有延伸到岛中的第二掺杂区域 所述第二侧壁并形成向下延伸到所述检测器材料岛的第二导电区域，所述第一和第二导电区域各自具有作为所述岛的顶端的一部分的顶端; 与所述第一导电区域的顶端的第一电连接; 以及到第二导电区域的顶端的第二电连接。

    Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon
    13.
    发明授权
    Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon 失效
    应变工程直通Ge / SnxGe1-x异质二极管和多量子阱光电探测器，在SnySizGe1-y-z缓冲硅上生长的激光器，发射器和调制器

    公开(公告)号：US06897471B1

    公开(公告)日：2005-05-24

    申请号：US10722611

    申请日：2003-11-28

    申请人： Richard A. Soref ,  Jose Menendez ,  John Kouvetakis

    发明人： Richard A. Soref ,  Jose Menendez ,  John Kouvetakis

    IPC分类号： H01L31/0328

    CPC分类号： H01L31/035254 ,  B82Y20/00 ,  H01L29/155 ,  H01L31/105 ,  H01L33/12 ,  H01L33/34 ,  H01S5/3427

    摘要： This invention teaches two new families of Si-based Ge/SnxGe1-x heterodiode and multiple quantum well (MQW) photonic devices: (1) band-to-band photodetectors, lasers, emitters, amplifiers and modulators for the 1.5 to 12 μm wavelength range; (2) intersubband photodetectors, lasers, emitters and modulators for 12 to 100 μm operation. The bipolar band-to-band devices have applications within the 1.5-2.2, 3-5 and 8-to-12 μm bands. The unipolar intersubband group has longwave infrared and terahertz applications. All strained-layer devices are grown a relaxed SnySizGe1-y-z buffer layer—a virtual substrate (VS) grown directly upon a silicon wafer by unique LT UHV-CVD. The VS provides a low-defect atomic template for subsequent heteroepitaxy and is an essential enabling technique for engineering tensile and compressive strain within the Ge/SnxGe1-x MQW by selecting the VS lattice parameter to be approx midway between the layer lattices.

    摘要翻译： 本发明教导了两个新的基于Si的Ge / Sn x Ge 1-x N异质二极管和多量子阱（MQW）光子器件的新族：（1）带 - 波段光电探测器，激光器，发射器，放大器和调制器，用于1.5至12 mum波长范围; （2）子带间光电检测器，激光器，发射器和调制器，用于12至100个操作。 双极性带对频带器件具有1.5-2.2,3-5和8到12个母带的应用。 单极子带组具有长波红外和太赫兹应用。 所有的应变层器件都生长在一个松弛的Sn>> Ge 1 1> buffer buffer layer upon upon upon upon upon upon upon upon upon upon upon upon upon upon 通过独特的LT UHV-CVD的硅晶片。 VS提供了用于随后的异质外延的低缺陷原子模板，并且是用于通过以下方式在Ge / Sn x Ge 1-x MQW内设计拉伸和压缩应变的必需的使能技术： 选择VS晶格参数在层格之间大约中间。

    Semiconductor substrate for reflecting electromagnetic radiation within a wavelength range
    14.
    发明授权
    Semiconductor substrate for reflecting electromagnetic radiation within a wavelength range 失效
    用于反射波长范围内的电磁辐射的半导体衬底

    公开(公告)号：US6111266A

    公开(公告)日：2000-08-29

    申请号：US952006

    申请日：1997-11-07

    申请人： Roger T Carline ,  David J Robbins

    发明人： Roger T Carline ,  David J Robbins

    IPC分类号： H01L27/14 ,  H01L31/0232 ,  H01L31/0352 ,  H01L29/06

    CPC分类号： B82Y20/00 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/035254

    摘要： A semiconductor substrate, suitable for epitaxial growth thereon, comprising a plurality of layers of material. The interfaces between layers act as reflectors of electromagnetic radiation. The reflectors may be used in, for example, resonant cavities in which may be located, for example, multi-quantum well detectors, the efficiency of said detectors being increased by virtue of the enhanced electric field associated with resonance in the cavity.

    摘要翻译： PCT No.PCT / GB96 / 01324 Sec。 371日期：1997年11月7日 102（e）1997年11月7日PCT PCT 1996年6月4日PCT公布。 公开号WO96 / 39719 日期1996年12月12日一种适用于其上的外延生长的半导体衬底，包括多层材料。 层之间的界面充当电磁辐射的反射器。 反射器可以用在例如可以位于其中的谐振腔，例如多量子阱检测器，由于与空腔中的谐振相关联的增强的电场，所述检测器的效率增加。

    Method of fabricating an optical semiconductor device
    16.
    发明授权
    Method of fabricating an optical semiconductor device 失效
    制造光半导体器件的方法

    公开(公告)号：US5994154A

    公开(公告)日：1999-11-30

    申请号：US67619

    申请日：1998-04-28

    申请人： Takenori Morikawa

    发明人： Takenori Morikawa

    IPC分类号： H01L31/12 ,  H01L27/146 ,  H01L27/15 ,  H01L31/0352 ,  H01L31/107 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/34 ,  H01L33/44 ,  H01S5/00 ,  H01S5/026 ,  H01L21/00

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L27/14643 ,  H01L27/15 ,  H01L31/035254

    摘要： There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconductor layer, a highly doped, second semiconductor layer formed on the first insulating layer, a third semiconductor layer formed on the second semiconductor layer, a device isolation region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the device isolation region defining a device formation region therein, the device formation region being formed with a recess starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a second insulating layer covering an inner sidewall of the recess therewith, a multi-layered structure formed within the recess, the multi-layered structure having at least a quantum well layer and a contact layer, a connection region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a first electrode formed on the connection region, a second electrode formed on the contact layer, and a light-impermeable region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the light-impermeable region being formed outside the recess. The optical semiconductor device can be fabricated in a planar structure, and has an improved photoelectric transfer efficiency. The optical semiconductor device makes it possible to integrate a light-emitting device and a light-receiving device on a common chip with the devices being optically insulated from each other.

    摘要翻译： 提供了一种光半导体器件，包括第一半导体层，形成在第一半导体层上的第一绝缘层，第一绝缘层具有与第一半导体层的折射率不同的折射率，高掺杂的第二半导体层 形成在所述第一绝缘层上的第三半导体层，形成在所述第二半导体层上的第三半导体层，具有从所述第三半导体层的上表面开始并终止于所述第一绝缘层的上表面的深度的器件隔离区， 区域，其中限定了器件形成区域，器件形成区域形成有从第三半导体层的上表面开始并终止在第二半导体层的上表面处的凹部，覆盖凹部的内侧壁的第二绝缘层 由此，形成在凹部内的多层结构，多层结构 至少具有量子阱层和接触层的连接区域，具有从第三半导体层的上表面开始并终止于第二半导体层的上表面的深度的连接区域，形成在连接区域上的第一电极， 形成在所述接触层上的第二电极，以及具有从所述第三半导体层的上表面开始并终止于所述第一绝缘层的上表面的深度的不透光区域，所述不透光区域形成在所述凹部 。 光学半导体器件可以制造成平面结构，并且具有改善的光电转换效率。 光学半导体器件使得可以将公知的芯片上的发光器件和光接收器件彼此光隔离地集成在一起。

    Semiconductor device having a GESC layer between silicon layers with triangular Ge concentration
    17.
    发明授权
    Semiconductor device having a GESC layer between silicon layers with triangular Ge concentration 失效
    在具有三角形Ge浓度的硅层之间具有GESC层的半导体器件

    公开(公告)号：US5783839A

    公开(公告)日：1998-07-21

    申请号：US821926

    申请日：1997-03-21

    申请人： Takenori Morikawa ,  Tsutomu Tashiro

    发明人： Takenori Morikawa ,  Tsutomu Tashiro

    IPC分类号： H01L31/10 ,  H01L31/0352 ,  H01L29/06

    CPC分类号： B82Y20/00 ,  H01L31/035254 ,  Y10S438/933

    摘要： Disclosed is a semiconductor device, which is used as an optical detector and has: a photodiode section which has a first silicon layer, a light-absorbing layer and a second silicon layer which are in turn layered on a silicon substrate; wherein the light-absorbing layer is formed as a single silicon-germanium epitaxial layer and the single silicon-germanium epitaxial layer has a germanium concentration distribution which provides germanium concentrations of zero at its interfaces to the first silicon layer and the second silicon layer and provides a triangle-shaped concentration profile that a peak concentration value is provided in the middle of the single silicon-germanium epitaxial layer.

    摘要翻译： 公开了一种半导体器件，其用作光学检测器，并具有：具有第一硅层，光吸收层和第二硅层的光电二极管部分，其又层叠在硅基板上; 其中所述光吸收层形成为单个硅 - 锗外延层，并且所述单个锗锗外延层具有在其与所述第一硅层和所述第二硅层的界面处提供锗浓度为零的锗浓度分布，并且提供 在单个硅 - 锗外延层的中间设置峰值浓度值的三角形浓度分布。

    Manufacturing method of semiconductor device
    18.
    发明授权
    Manufacturing method of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US5576221A

    公开(公告)日：1996-11-19

    申请号：US358455

    申请日：1994-12-19

    申请人： Hisashi Takemura ,  Tsutomu Tashiro

    发明人： Hisashi Takemura ,  Tsutomu Tashiro

    IPC分类号： H01L27/144 ,  H01L31/0232 ,  H01L31/0352 ,  H01L21/20

    CPC分类号： B82Y20/00 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/035254

    摘要： To selectively grow a P type silicon layer and a Si/Ge.sub.x Si.sub.1-x superlattice layer under low temperature conditions in the area encircled with a groove, at least the side walls of which consist of silicon oxide film, which is formed in the silicon substrate. Thereby, the leak at the side of the superlattice layer can be reduced. Furthermore, by burying a metal film in the groove, the loss of light at the side of the superlattice layer can be suppressed to the minimum. Thus a light receiver having silicon/germanium silicon-mixed-crystal layer is stably formed in a silicon semiconductor substrate and optical absorption efficiency can be improved.

    摘要翻译： 为了在包围沟槽的区域中，在低温条件下选择性地生长P型硅层和Si / GexSi1-x超晶格层，至少其侧壁由在硅衬底中形成的氧化硅膜构成。 由此，可以减少超晶格层侧的泄漏。 此外，通过将金属膜埋入凹槽中，可以将超晶格层侧的光的损失抑制到最小。 因此，在硅半导体衬底中稳定地形成具有硅/锗硅 - 混合晶层的光接收器，并且可以提高光吸收效率。