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公开(公告)号：US09816193B2
公开(公告)日：2017-11-14
申请号：US13324890
申请日：2011-12-13
Applicant: Kousik Ganesan , Tighe Spurlin , Jonathan D. Reid , Shantinath Ghongadi , Andrew McKerrow , James E. Duncan
Inventor： Kousik Ganesan , Tighe Spurlin , Jonathan D. Reid , Shantinath Ghongadi , Andrew McKerrow , James E. Duncan
CPC classification number: C25D3/38 , C25D5/003 , C25D5/08 , C25D7/123 , C25D17/001 , C25D21/04 , C25D21/14
Abstract: Methods, systems, and apparatus for plating a metal onto a work piece with a plating solution having a low oxygen concentration are described. In one aspect, a method includes reducing an oxygen concentration of a plating solution. The plating solution includes about 100 parts per million or less of an accelerator. After reducing the oxygen concentration of the plating solution, a wafer substrate is contacted with the plating solution in a plating cell. The oxygen concentration of the plating solution in the plating cell is about 1 part per million or less. A metal is electroplated with the plating solution onto the wafer substrate in the plating cell. After electroplating the metal onto the wafer substrate, an oxidizing strength of the plating solution is increased.
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公开(公告)号：US09799541B1
公开(公告)日：2017-10-24
申请号：US14576054
申请日：2014-12-18
Applicant: TruTag Technologies, Inc.
Inventor： Tam Kim , Craig Leidholm
IPC: C25D11/32 , C25D17/08 , C25D21/04 , C25F3/12 , C25F7/00 , H01L21/673 , H01L21/3063 , H01L21/67 , H01L21/306 , C25D17/06 , C25D17/00 , C25D11/00
CPC classification number: H01L21/67086 , C25D11/005 , C25D11/022 , C25D11/32 , C25D17/004 , C25D17/008 , C25D17/06 , C25D17/08 , C25D21/04 , C25D21/10 , C25F3/12 , C25F7/00 , H01L21/30604
Abstract: An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.
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公开(公告)号：US20160281254A1
公开(公告)日：2016-09-29
申请号：US15179835
申请日：2016-06-10
Applicant: EBARA CORPORATION
Inventor： Tomonori HIRAO
IPC: C25D5/48 , C25D17/00 , C25D21/06 , C25D21/04 , B65G45/26 , C23C18/16 , B65G45/10 , B65G45/22 , B65G45/24 , C25D17/06 , C25D21/02
CPC classification number: C25D5/48 , B65G45/10 , B65G45/22 , B65G45/24 , B65G45/26 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/1675 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/04 , C25D21/06
Abstract: A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.
Abstract translation: 电镀装置包括：配置成在其中储存处理液的处理槽，构造成将保持基板的基板保持件浸入处理液中的输送器，将基板保持器从处理槽中升出，并将基板保持件输送到 水平方向和气流发生器，其构造成相对于输送基板保持器的方向产生衬底前方的清洁气体流。 输送器沿水平方向将气流发生器与基板保持器一起移动，同时沿水平方向输送基板保持器。
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公开(公告)号：US09255339B2
公开(公告)日：2016-02-09
申请号：US13236587
申请日：2011-09-19
Applicant: Aurelien Philippe Jean Maclou Botman , Milos Toth , Steven Randolph , David H. Narum
Inventor： Aurelien Philippe Jean Maclou Botman , Milos Toth , Steven Randolph , David H. Narum
CPC classification number: H01J37/20 , C25D5/003 , C25D5/02 , C25D5/026 , C25D5/04 , C25D17/005 , C25D17/10 , C25D17/12 , C25D21/04 , C25D21/12 , H01J37/18 , H01J37/222 , H01J37/28 , H01J2237/182 , H01J2237/2003 , H01J2237/202 , H01J2237/2801
Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or microelectromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.
Abstract translation: 电荷转移机构用于局部沉积或去除小结构的材料。 产生局部电化学电池，而不必将整个工件浸入浴中。 电荷转移机构可以与带电粒子束或激光系统一起使用以修改诸如集成电路或微机电系统的小结构。 电荷转移过程可以在空气中或在一些实施方案中在真空室中进行。
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15.发明授权
公开(公告)号：US09243339B2
公开(公告)日：2016-01-26
申请号：US13480887
申请日：2012-05-25
Applicant: Trevor Pearson
Inventor： Trevor Pearson
Abstract: A copper electroplating bath for producing copper electrodeposits is described. The copper electroplating bath comprises (a) a soluble copper salt, (b) an electrolyte comprising one or more acids, and (c) a grain refining additive comprising an alkyl, aryl or alkylaryl diamine. The copper electroplating bath can be used for producing electroformed copper deposits having low oxygen content.
Abstract translation: 描述了用于生产铜电沉积物的铜电镀浴。 铜电镀浴包括（a）可溶性铜盐，（b）包含一种或多种酸的电解质，和（c）包含烷基，芳基或烷基芳基二胺的晶粒细化添加剂。 铜电镀浴可用于生产氧含量低的电铸铜矿床。
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公开(公告)号：US20150122659A1
公开(公告)日：2015-05-07
申请号：US14069731
申请日：2013-11-01
Applicant: Piotr KULA , Antoni RZEPKOWSKI , Robert PIETRASIK , Radomir ATRASZKIEWICZ , Konrad DYBOWSKI , Wojciech MODRZYK
Inventor： Piotr KULA , Antoni RZEPKOWSKI , Robert PIETRASIK , Radomir ATRASZKIEWICZ , Konrad DYBOWSKI , Wojciech MODRZYK
CPC classification number: C23C14/35 , C01B32/186 , C01B2204/32 , C23C16/003 , C23C16/01 , C23C16/26 , C25D5/48 , C25D7/00
Abstract: A multilayered plate containing, as the graphene forming matrix, an external layer composed of a metal or a metal alloy and, as a support substrate, the transition metals and/or their alloys and/or metalloids and/or their solutions and compounds is subjected to heat treatment in the following stages: plate heating until the plate reaches a temperature that is between 0.5° C. and 50° C., annealing, at a constant or variable temperature from the temperature range, for a period between 60 and 600 seconds and cooling, with the cooling rate maintained between 0.1 and 2° C./min in the temperature range of 1,200° C.-1,050° C.
Abstract translation: 包含作为石墨烯形成基体的多层板包含由金属或金属合金构成的外层，作为载体基板，过渡金属和/或其合金和/或准金属和/或其溶液和化合物经受 在以下阶段进行热处理：板加热直到板达到0.5℃至50℃的温度，在恒温或可变温度下从该温度范围退火60至600秒的时间 冷却，在1200℃-150℃的温度范围内，冷却速度保持在0.1〜2℃/分。
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17.发明申请BUBBLE AND FOAM SOLUTIONS USING A COMPLETELY IMMERSED AIR-FREE FEEDBACK FLOW CONTROL VALVE 有权泡沫和泡沫解决方案使用完整的无空气反馈流量控制阀
公开(公告)号：US20140166476A1
公开(公告)日：2014-06-19
申请号：US14102220
申请日：2013-12-10
Applicant: Lam Research Corporation
Inventor： Richard Abraham , Robert Rash , David W. Porter , Steven T. Mayer , John Ostrowski
CPC classification number: C25D21/04 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/008 , C25D21/12 , G01F23/14 , G01F23/263 , G01F23/296
Abstract: The embodiments disclosed herein relate to methods and apparatus for promoting bubble-free circulation of processing fluids in a recirculation system. Certain disclosed techniques involve passive, mechanical valve designs that promote variable resistance to flow in a drain. Other techniques involve automated flow control schemes that utilize feedback from flow meters, level sensors, etc. to achieve a balanced and bubble-free flow. The disclosed embodiments greatly reduce the incorporation of gas into a processing fluid, in particular as the processing fluid returns from a processing cell to a reservoir.
Abstract translation: 本文公开的实施例涉及促进再循环系统中处理流体的无气泡循环的方法和装置。 某些公开的技术涉及无源的，机械的阀门设计，其促进在排水管中流动的可变阻力。 其他技术涉及使用来自流量计，液位传感器等的反馈以实现平衡和无气泡流动的自动化流量控制方案。 所公开的实施例大大减少了气体加入到处理流体中，特别是当处理流体从处理池返回到储存器时。
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公开(公告)号：US08518224B2
公开(公告)日：2013-08-27
申请号：US12734438
申请日：2007-11-02
Applicant: Yue Ma , Xi Wang , Yunwen Huang , Zhenxu Pang , Voha Nuch , David Wang
Inventor： Yue Ma , Xi Wang , Yunwen Huang , Zhenxu Pang , Voha Nuch , David Wang
CPC classification number: C25D17/00 , C25D17/001 , C25D17/10 , C25D21/04
Abstract: The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.
Abstract translation: 本发明提供具有多个阳极区和阴极区的电镀装置。 每个区域内的电解液流场都由独立的流量控制装置单独控制。 其表面形成打褶通道的气泡收集器通过收集小气泡，聚结并释放残留气体来实现气体去除。 内置在气泡收集器内的缓冲区还允许不稳定的微小气泡溶解。
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公开(公告)号：US08475637B2
公开(公告)日：2013-07-02
申请号：US12337147
申请日：2008-12-17
Applicant: Jingbin Feng , Zhian He , Robert Rash , Steven T. Mayer
Inventor： Jingbin Feng , Zhian He , Robert Rash , Steven T. Mayer
CPC classification number: C25D7/123 , C25D17/001 , C25D17/002
Abstract: Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte flow to the work piece, and electrolyte delivery and return paths are provided for delivering electrolyte to and away from the plating chamber. Additionally, a vented electrolyte manifold is disposed in the electrolyte delivery path immediately upstream of the plating chamber, the vented electrolyte manifold comprising one or more electrolyte delivery openings that open to the plating chamber and one or more vents that open to a location other than the plating chamber.
Abstract translation: 公开了与提高电镀膜的均匀性有关的实施例。 例如，一个公开的实施例提供了一种电镀设备，其包括电镀室，工件保持器，构造成电接触工件的阴极接触件和被配置为电接触设置在电镀室中的阳极的阳极接触件。 扩散阻挡层设置在阴极接触件和阳极接触件之间，以提供均匀的电解质流向工件，并且提供电解质输送和返回路径用于将电解质输送到电镀室和远离电镀室。 另外，排气的电解液歧管设置在紧邻镀室的上游的电解质输送路径中，排出的电解质歧管包括一个或多个向电镀室敞开的电解质输送开口，以及一个或多个通向出口 电镀室。
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公开(公告)号：US06908515B2
公开(公告)日：2005-06-21
申请号：US10221235
申请日：2001-03-21
Applicant: Rolf Schroder , Reinhard De Boer , Hans-Joachim Grapentin , Regina Czeczka
Inventor： Rolf Schroder , Reinhard De Boer , Hans-Joachim Grapentin , Regina Czeczka
CPC classification number: H05K3/0088
Abstract: The devices and methods of the art do not readily allow moistening of, removing gas bubbles from and/or increasing the transfer of material in through bores and/or pocket holes in printed circuit boards (PCB). Considerable problems are presented by the treatment of very narrow bores with high aspect ratios in particular. To overcome this problem a method was found that involves the following stages: the printed circuit boards PCB are passed through a processing plant on a horizontal conveying path and in one conveying plane 2 by means of transportation means 13, 14 and are thereby brought to contact a liquid for treatment, wherein mechanical pulses are directly transmitted to the printed circuit boards PCB via the transportation means 13, 14 and/or via the liquid for treatment by means of pulse generating means 50.
Abstract translation: 本领域的装置和方法不容易地润湿，去除气泡和/或增加印刷电路板（PCB）中的通孔和/或袋孔中的材料的转移。 特别是通过处理具有高纵横比的非常狭窄的孔而呈现出相当大的问题。 为了克服这个问题，发现一个方法包括以下阶段：印刷电路板PCB通过运输装置13,14在水平输送路径上和一个输送平面2中通过处理设备，从而被接触 用于处理的液体，其中机械脉冲通过输送装置13,14直接传送到印刷电路板PCB，和/或经由用于通过脉冲发生装置50进行处理的液体。
