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公开(公告)号：US11139637B2
公开(公告)日：2021-10-05
申请号：US16844299
申请日：2020-04-09
发明人： Melvin McLaurin , Alexander Sztein , Po Shan Hsu , Eric Goutain , James W. Raring , Paul Rudy , Vlad Novotny
摘要： A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.
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公开(公告)号：US20210265805A1
公开(公告)日：2021-08-26
申请号：US17169037
申请日：2021-02-05
申请人： INPHI CORPORATION
摘要： A light source based on integrated silicon photonics includes a die of a silicon substrate having at least one chip site configured with a surface region, a trench region, and a first stopper region located separately between the surface region and the trench region. The trench region is configured to be a depth lower than the surface region. The light source includes a laser diode chip having a p-side facing the chip site and a n-side being distal to the chip site. The p-side includes a gain region bonded to the trench region, an electrode region bonded to the surface region, and an isolation region engaged with the stopper region to isolate the gain region from the electrode region. The light source also includes a conductor layer in the die configured to connect the gain region to an anode electrode and separately connect the electrode region to a cathode electrode.
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公开(公告)号：US11088505B2
公开(公告)日：2021-08-10
申请号：US16876569
申请日：2020-05-18
IPC分类号： H01S5/02 , H01S5/343 , H01S5/32 , H01S5/0234
摘要： A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.
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公开(公告)号：US20220416509A1
公开(公告)日：2022-12-29
申请号：US17778137
申请日：2020-12-10
发明人： Takahiro ARAKIDA
IPC分类号： H01S5/223 , H01S5/183 , H01S5/0234 , H01S5/42
摘要： A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate; a semiconductor layer; a semiconductor stacked body; a buried layer; and a non-continuous lattice plane. The semi-insulating substrate has a first surface and a second surface that are opposed to each other. The semiconductor layer is stacked on the first surface of the semi-insulating substrate. The semiconductor layer has electrical conductivity. The semiconductor stacked body is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The semiconductor stacked body has a light emitting region and includes a ridge section on the semi-insulating substrate side. The light emitting region is configured to emit laser light. The buried layer is provided around the ridge section of the semiconductor stacked body. The non-continuous lattice plane is provided between the semi-insulating substrate and the semiconductor stacked body.
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公开(公告)号：US20220407285A1
公开(公告)日：2022-12-22
申请号：US17895440
申请日：2022-08-25
摘要： A photonics device includes a silicon wafer including a cathode region, an anode region, a trench region formed between the cathode region and the anode region, and a linear ridge formed between the cathode region and the anode region. A laser diode chip is mounted on the silicon wafer. A conductor layer disposed between the silicon wafer and the laser diode chip includes a first section disposed between the laser diode chip and the cathode region on a first side of the trench to electrically connect the laser diode chip to a cathode electrode of the photonics device and a second section disposed between the anode region and the laser diode chip on a second side of the trench to electrically connect the laser diode chip to an anode electrode of the photonics device.
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公开(公告)号：US11431146B2
公开(公告)日：2022-08-30
申请号：US14920490
申请日：2015-10-22
申请人： Jabil Inc.
发明人： Lorito E. Victoria , Lars Runge
IPC分类号： H01S5/02315 , H01S5/023 , H01S5/02345 , H01S5/0233 , H01S5/0235 , H01S5/02355 , H01S5/14 , H01S5/024 , H01S5/02216 , H01S5/00 , H01S5/0231 , H01S5/0234 , H01S5/02253
摘要： A chip on submodule includes a submount having a top surface, bottom surface and side surfaces. A positive electrode plate is affixed to a first portion of one side surface, the top surface and a first portion of the bottom surface. The positive electrode plated first portion of the one side surface and the top surface are interconnected. A connector electrically connects the positive electrode plated top surface to the first portion of the bottom surface. A negative electrode plate is affixed to a second portion of the one side surface and a second portion of the bottom surface. The negative electrode plated second portion of the one side surface and second portion of the bottom surface are interconnected. A laser diode is affixed to the positive electrode plated first portion of the one side surface and connected to the negative electrode plated second portion of the one side surface.
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公开(公告)号：US20220255293A1
公开(公告)日：2022-08-11
申请号：US17609721
申请日：2020-02-12
发明人： Takashi KANO , Hiroyuki HAGINO
摘要： A semiconductor laser element includes a light emission layer and a plurality of waveguides to arranged in one direction. A semiconductor laser device includes the semiconductor laser element and a first base disposed, via a first adhesion layer, on one face in the lamination direction of the semiconductor laser element. The thermal resistance of the first adhesion layer is, in the arrangement direction of the plurality of waveguides to lower on one end portion side than on the other end portion side.
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公开(公告)号：US20220200232A1
公开(公告)日：2022-06-23
申请号：US17192470
申请日：2021-03-04
发明人： Albert YUEN , Mitchell SRIMONGKOL , Joseph LIN
IPC分类号： H01S5/0234
摘要： In some implementations, an optical device for mounting in a flip-chip configuration includes a plurality of flip-chip bumps that are arranged in a pattern on the optical device, wherein the pattern is not aligned with a crystal cleavage plane associated with a substrate of the optical device. In some implementations, the optical device further includes a gap that separates a primary region of the optical device and a secondary region of the optical device, wherein at least one portion of a side of the gap is oriented at a non-zero angle to the crystal cleavage plane.
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公开(公告)号：US20220140566A1
公开(公告)日：2022-05-05
申请号：US17573701
申请日：2022-01-12
申请人： OSRAM OLED GmbH
发明人： Wolfgang Reill
IPC分类号： H01S5/0237 , H01S5/042 , H01S5/065 , H01S5/023 , H01S5/0233 , H01S5/0234 , H01S5/0235
摘要： A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.
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公开(公告)号：US11322908B2
公开(公告)日：2022-05-03
申请号：US16670833
申请日：2019-10-31
发明人： Toru Takayama , Tohru Nishikawa , Tougo Nakatani , Katsuya Samonji , Takashi Kano , Shinji Ueda
IPC分类号： H01S5/34 , H01S5/024 , H01S5/026 , H01S5/22 , H01S5/343 , H01S5/023 , H01S5/0233 , H01S5/0235 , H01S5/16 , H01S5/02 , H01S5/0234 , F21Y115/30 , F21S41/176 , F21S41/16 , H01S5/20 , H01S5/10 , H01S5/0237
摘要： A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0≤x≤1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.
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