SOI WAFER AND METHOD FOR PRODUCING IT
    21.
    发明申请
    SOI WAFER AND METHOD FOR PRODUCING IT 有权
    SOI WAFER及其生产方法

    公开(公告)号:US20080153259A1

    公开(公告)日:2008-06-26

    申请号:US12016225

    申请日:2008-01-18

    IPC分类号: H01L21/30

    摘要: An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G

    摘要翻译: SOI晶片由载体晶片和厚度小于500nm的单晶硅层构成,在硅层的整个体积中存在过量的间隙硅原子。 SOI晶片可以通过Czochralski硅单晶生长制备,条件v / G <(V / G) = 1.3×10 -3 cm 2 在整个晶体截面上在结晶前沿实现/SUP>/(K.min),结果产生的硅单晶中存在过量的间隙硅原子; 从该硅单晶分离至少一个施主晶片,将施主晶片与载体晶片的接合以及施主晶片的厚度减小,结果是厚度小于500nm的硅层与 载体晶片残留。

    Methods of close-coupled atomization of metals utilizing
non-axisymmetric fluid flow
    22.
    发明授权
    Methods of close-coupled atomization of metals utilizing non-axisymmetric fluid flow 失效
    使用非轴对称流体流动的金属近似雾化的方法

    公开(公告)号:US5656061A

    公开(公告)日:1997-08-12

    申请号:US442427

    申请日:1995-05-16

    IPC分类号: B22F9/08

    摘要: Close-coupled atomization methods employing non-axisymmetric fluid flow geometries have demonstrated superior efficiency in the production of fine superalloy powder, such as, for example, nickel base superalloys compared to conventional close-coupled atomization utilizing an axisymmetric gas orifice and an axisymmetric melt nozzle. It is believed that the principal physical mechanisms leading to non-axisymmetric atomization system fine powder yield improvement are atomization plume spreading, the at least lessening of the melt pinch down at the interaction point between the atomization liquid and the liquid melt and improved melt film formation at the melt guide tube tip. The greatest fine powder yield improvement occurred when the non-axisymmetric atomization systems are operated with atomization parameters that result in the formation of multiple atomization plumes. Recognition of the atomization plume characteristics ranging from pinch-down to spreading to multiple sub-plume formation provides a basis for atomization process control to provide the greatest fine powder yield improvement verses conventional close-coupled axisymmetric atomization systems.

    摘要翻译: 使用非轴对称流体流动几何形状的紧耦合雾化方法已经证明,与使用轴对称气体孔和轴对称熔体喷嘴的常规紧耦合雾化相比,精细超级合金粉末的生产,例如镍基超级合金具有优异的效率 。 据信,导致非轴对称雾化系统细粉产率提高的主要物理机制是雾化羽流扩散,熔体在雾化液体和液体熔体之间的相互作用点处至少减少,并改善熔体膜形成 在熔体引导管尖端。 当非轴对称雾化系统以导致形成多个雾化羽流的雾化参数运行时,发生最大的细粉产量改进。 识别从夹紧到扩展到多次羽流形成的雾化羽流特征为雾化过程控制提供了基础,以提供与传统的近耦合轴对称雾化系统相比最大的细粉产量提高。