摘要:
An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G
摘要翻译:SOI晶片由载体晶片和厚度小于500nm的单晶硅层构成,在硅层的整个体积中存在过量的间隙硅原子。 SOI晶片可以通过Czochralski硅单晶生长制备,条件v / G <(V / G) SUB> = 1.3×10 -3 cm 2 在整个晶体截面上在结晶前沿实现/SUP>/(K.min),结果产生的硅单晶中存在过量的间隙硅原子; 从该硅单晶分离至少一个施主晶片,将施主晶片与载体晶片的接合以及施主晶片的厚度减小,结果是厚度小于500nm的硅层与 载体晶片残留。
摘要:
Close-coupled atomization methods employing non-axisymmetric fluid flow geometries have demonstrated superior efficiency in the production of fine superalloy powder, such as, for example, nickel base superalloys compared to conventional close-coupled atomization utilizing an axisymmetric gas orifice and an axisymmetric melt nozzle. It is believed that the principal physical mechanisms leading to non-axisymmetric atomization system fine powder yield improvement are atomization plume spreading, the at least lessening of the melt pinch down at the interaction point between the atomization liquid and the liquid melt and improved melt film formation at the melt guide tube tip. The greatest fine powder yield improvement occurred when the non-axisymmetric atomization systems are operated with atomization parameters that result in the formation of multiple atomization plumes. Recognition of the atomization plume characteristics ranging from pinch-down to spreading to multiple sub-plume formation provides a basis for atomization process control to provide the greatest fine powder yield improvement verses conventional close-coupled axisymmetric atomization systems.