摘要:
Far-end noise caused by coupling between active and quiet signal lines of wiring planes of an integrated circuit chip or chip carrier is reduced by providing floating crossing lines in wiring layers in an X-Y wiring plane pair.
摘要:
A system and method for performing a test for characterizing high frequency operation of PCB boards. More particularly, a system and methodology is provided to implement a time-domain short pulse propagation (SPP) technique on the production line, on large, multi-layer, product-level PCB boards, for large volume testing, by people who are not familiar with advanced, delicate, measurement techniques, who need robust test facilities, and cannot afford the time or expense of other lab-type approaches.
摘要:
A method, computer program and system for the optimization of semiconductor process parameters given a pre-specified set of targets and constraints on electrical performance metrics are disclosed. Semiconductor process engineers who are not expert in the art of electrical analysis or mathematical optimization can readily use the method of this invention in optimizing semiconductor process parameters. Accommodates the differences in design styles, metal layer routing, and electrical metrics using priority schedules that are easy to input and understand. Enables the exploration of the process parameter space using primitive process tolerances and accurate electrical information provided by field solvers and circuit analysis programs.
摘要:
New Frequency dependent RLC extraction and modeling for on chip integrity and noise verification employs: A) 2D scan line algorithm for the collection of adjacent signal and power conductor coordinates; B) In core pair-wise frequency Dependent RL extraction; C) In core equivalent circuit synthesis; D) caching and partitioning RL extraction techniques for run time efficiency; and E) Techniques for synthesizing stable circuits to represent frequency dependent RL circuits for non-mono tonic R12.
摘要:
A system and method for analyzing a circuit with transmission lines includes determining which sources influence each of a plurality of transmission lines, based on coupling factors. Transmission line parameters are computed based on the sources, which influence each transmission line. A transient response or frequency response is analyzed for each transmission line by segmenting each line to perform an analysis on that line. The step of analyzing is repeated using waveforms determined in a previous iteration until convergence to a resultant waveform has occurred.
摘要:
An X-Y grid tree clock distribution network for distributing a clock signal across a VLSI chip. Tunable wiring tree networks are combined with an X-Y grid vertically and horizontally connecting all the tree end points. No drivers are necessary at connection points of the tree end points to the X-Y grid. The final X-Y grid distributes the clock signal close to every place it is needed, and reduces skew across local regions. A tuning method allows buffering of the clock signal, while minimizing both nominal clock skew and clock uncertainty. The tuned tree networks provide low skew even with variations in clock load density and non-ideal buffer placement, while minimizing the number of buffers needed. The tuning method first represents a total capacitance of one or more of clock pin loads and twig wiring as a clustered grid load. Next, a smoothing of the clustered grid loads approximates the effect of the X-Y grid. Electrical simulation models are created for network components and clustered grid loads are substituted with smoothed clustered grid loads. A set of NSECTOR electrical net lists are next created by extracting a net list with associated X-Y grid wires cut to isolate each sector net list from its neighboring sectors. Each NSECTOR electrical net list is then tuned, wherein the smoothed clustered grid loads represent an approximation of the effects of the neighboring sectors of each NSECTOR electrical net list.
摘要:
A method for completely characterizing coupled transmission lines by short-pulse propagation is described. The complex frequency-dependent propagation matrix, impedance matrix and admittance matrix for a set of n parallel transmission lines can be determined by comparing the properties of two sets of coupled transmission lines of different length. Each transmission line set has two conductors of unequal length and ground conductors to form a coupled transmission line system. Each transmission line set can have uncoupled ends. An input pulse is provided at at least one node of each transmission line set. The complex frequency dependent propagation matrix of each transmission line set is determined by a comparison of the output pulses at the remaining nodes of each transmission line set which involves ratioing to cancel out the effect of the pad-to-probe discontinuity and the uncoupled ends which make it unnecessary to do any embedding. For a transmission line wherein the dielectric loss is negligible, the complex frequency dependent characteristic admittance can be determined from the propagation matrix and the empirically determined capacitance matrix. For a transmission line wherein the resistive loss is negligible, the frequency dependent characteristic impedance matrix can be determined from the propagation matrix and the empirically determined inductance matrix. Specific structures are used with the measurement method to determine these coupled transmission line parameters. The method is particularly useful to determine these parameters for transmission lines in semiconductor chip packaging substrates.
摘要:
A thin film region 14 of a multichip carrier 10 is provided with at least one fabrication process or tooling monitor for monitoring the quality of the fabrication process during the sequential formation of the layers of the region 14. The process monitor is formed with a desired layer or layers of the thin film region, such as by a photolithographic process. A centrally disposed active wiring region 30 of a layer is surrounded by peripherally disposed fabrication monitor sites 32. The sites 32 can be located such that they do not occupy or interfere with the surface area required for the wiring region 30 while still being disposed near enough to the wiring region such that the electrical and physical characteristics of the thin film is substantially the same. Four different types of thin film fabrication process monitors are disclosed, including a line/via monitor, a dielectric monitor, a laser assisted repair monitor and a laser assisted engineering change monitor.