公开(公告)号：US20060189134A1

公开(公告)日：2006-08-24

申请号：US11064561

申请日：2005-02-24

申请人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

发明人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L21/306 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76865 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01002 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01054 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

公开(公告)号：US20060164194A1

公开(公告)日：2006-07-27

申请号：US11358823

申请日：2006-02-21

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20050024169A1

公开(公告)日：2005-02-03

申请号：US10915742

申请日：2004-08-11

申请人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

发明人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

IPC分类号： H01H59/00 ,  H01H53/00

CPC分类号： H01H59/0009 ,  H01H2001/0068 ,  H01H2001/0078

摘要： A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

摘要翻译： 一种开关，其包括基板，细长可动部分，设置在所述部分一侧的一对电触点，设置在该部分的一侧并与所述一对电触头分离的致动电极，其中所述部分，所述触点 并且所述电极设置在所述基板上，其中所述细长可动部分被布置和尺寸设定成使得所述部件能够沿大致横向方向朝向所述触点移动; 可移动部分包括固定到头部的中心细长构件，其具有设置在一侧的电触头。 可移动部分的一端通过各种锚定装置附接到基板。

公开(公告)号：US20050007217A1

公开(公告)日：2005-01-13

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

IPC分类号： H01H59/00 ,  H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400°C）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US06758223B1

公开(公告)日：2004-07-06

申请号：US09603254

申请日：2000-06-23

申请人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

发明人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

IPC分类号： B08B600

CPC分类号： H01L21/02063 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76807 ,  Y10S134/902 ,  Y10S438/906

摘要： A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising: supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.

摘要翻译： 一种用于从半导体晶片表面或微电子复合结构去除后反应离子蚀刻副产物的方法，包括：提供还原气体等离子体，该还原气体等离子体包含选自N2 / H2或NH3混合物的成形气体混合物 / H2进入真空室，其中半导体晶片表面或微电子复合结构被支撑以在复合结构上形成后RIE聚合物材料副产物，而不显着除去已经暴露于 还原气体等离子体; 并用湿式清洁剂除去后RIE聚合物材料副产物。

公开(公告)号：US20080067683A1

公开(公告)日：2008-03-20

申请号：US11871533

申请日：2007-10-12

申请人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

发明人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

IPC分类号： H01L23/48

CPC分类号： H01L21/306 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76865 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01002 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01054 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

公开(公告)号：US20060108675A1

公开(公告)日：2006-05-25

申请号：US10993548

申请日：2004-11-19

申请人： Evan Colgan ,  Bruce Furman ,  Christopher Jahnes

发明人： Evan Colgan ,  Bruce Furman ,  Christopher Jahnes

IPC分类号： H01L21/50 ,  H01L23/06 ,  H01L21/48 ,  H01L21/44

CPC分类号： B81C1/00293 ,  B81C2203/0145

摘要： Apparatus and methods are provided for enabling wafer-scale encapsulation of microelectromechanical (MEM) devices (e.g., resonators, filters) to protect the MEMs from the ambient and to provide either a controlled ambient or a reduced pressure. In particular, methods for wafer-scale encapsulation of MEM devices are provided, which enable encapsulation of MEM devices under desired ambient conditions that are not determined by the deposition conditions of a sealing process in which MEM release via holes are sealed or pinched-off, and which prevent sealing material from being inadvertently deposited on the MEM device during the sealing process.

摘要翻译： 提供了设备和方法，用于实现微机电（MEM）装置（例如，谐振器，滤波器）的晶片级封装，以保护MEM免受环境影响，并提供受控的环境或减压。 特别地，提供了用于MEM器件的晶片级封装的方法，其能够在期望的环境条件下封装MEM器件，所述环境条件不是通过其中MEM释放通孔被密封或夹断的密封过程的沉积条件来确定的， 并且其在密封过程中防止密封材料被无意中沉积在MEM装置上。

公开(公告)号：US20050156695A1

公开(公告)日：2005-07-21

申请号：US11053732

申请日：2005-02-08

申请人： Panayotis Andricacos ,  L. Buchwalter ,  Hariklia Deligianni ,  Robert Groves ,  Christopher Jahnes ,  Jennifer Lund ,  Michael Meixner ,  David Seeger ,  Timothy Sullivan ,  Ping-Chuan Wang

发明人： Panayotis Andricacos ,  L. Buchwalter ,  Hariklia Deligianni ,  Robert Groves ,  Christopher Jahnes ,  Jennifer Lund ,  Michael Meixner ,  David Seeger ,  Timothy Sullivan ,  Ping-Chuan Wang

IPC分类号： H01H59/00 ,  H01H57/00 ,  H01L41/08 ,  H02N1/00

CPC分类号： H01H59/0009 ,  H01H2001/0078

摘要： A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.

公开(公告)号：US06876282B2

公开(公告)日：2005-04-05

申请号：US10150285

申请日：2002-05-17

申请人： Panayotis Constantinou Andricacos ,  L. Paivikki Buchwalter ,  Hariklia Deligianni ,  Robert A. Groves ,  Christopher Jahnes ,  Jennifer L. Lund ,  Michael Meixner ,  David Earle Seeger ,  Timothy D. Sullivan ,  Ping-Chuan Wang

发明人： Panayotis Constantinou Andricacos ,  L. Paivikki Buchwalter ,  Hariklia Deligianni ,  Robert A. Groves ,  Christopher Jahnes ,  Jennifer L. Lund ,  Michael Meixner ,  David Earle Seeger ,  Timothy D. Sullivan ,  Ping-Chuan Wang

IPC分类号： H01H59/00 ,  H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0078

摘要： A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.

摘要翻译： 一种微机电开关，包括：至少一对致动器电极; 分别输入和输出射频信号的至少一个输入电极和至少一个输出电极; 以及可由所述至少一对致动器电极之间的吸引部移动的光束，所述可移动光束具有至少一部分电连接到所述至少一个输入电极，并且当所述至少一个输入电极在所述至少一个输入电极之间被所述吸引力移动时， 至少一对致动器电极，用于在所述至少一个输入和输出电极之间形成电连接; 其中所述至少一对致动器电极与所述至少一个输入和输出电极中的每一个电隔离。 微机电开关可以配置为单极或多极和/或单掷或多掷。

公开(公告)号：US5729201A

公开(公告)日：1998-03-17

申请号：US496838

申请日：1995-06-29

申请人： Christopher Jahnes ,  Richard Joseph Gambino ,  Milan Paunovic ,  Alejandro Gabriel Schrott ,  Robert Jacob von Gutfeld

发明人： Christopher Jahnes ,  Richard Joseph Gambino ,  Milan Paunovic ,  Alejandro Gabriel Schrott ,  Robert Jacob von Gutfeld

IPC分类号： G06K19/06 ,  G06K19/067 ,  G08B13/24 ,  G08B13/14

CPC分类号： G08B13/2408 ,  G06K19/06187 ,  G06K19/067 ,  G08B13/2417 ,  G08B13/2437 ,  G08B13/2442

摘要： An inexpensive multibit magnetic tag is described which uses an array of amorphous wires in conjunction with a magnetic bias field. The tag is interrogated by the use of a ramped field or an ac field or a combination of the two. The magnetic bias is supplied either by coating each wire with a hard magnetic material which is magnetized or by using magnetized hard magnetic wires or foil strips in proximity to the amorphous wires. Each wire switches at a different value of the external interrogation field due to the difference in the magnetic bias field acting on each wire.

摘要翻译： 描述了一种廉价的多位磁性标签，其使用结合磁偏置场的非晶线阵列。 通过使用斜坡场或交流场或两者的组合来询问标签。 通过用磁化的硬磁性材料或通过使用靠近非晶线的磁化的硬磁线或箔条来涂覆每根导线来提供磁偏置。 由于作用在每根导线上的磁偏置磁场的差异，每根电线以外部询问磁场的不同值进行切换。