公开(公告)号：US08226770B2

公开(公告)日：2012-07-24

申请号：US11744760

申请日：2007-05-04

申请人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

发明人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/52

摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.

摘要翻译： 提供了用于提供感受器背面恒定发射率的方法和装置。 本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。 该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。 还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

公开(公告)号：US07547952B2

公开(公告)日：2009-06-16

申请号：US11420928

申请日：2006-05-30

申请人： Craig Metzner ,  Shreyas Kher ,  Yeong Kwan Kim ,  M. Noel Rocklein ,  Steven M. George

发明人： Craig Metzner ,  Shreyas Kher ,  Yeong Kwan Kim ,  M. Noel Rocklein ,  Steven M. George

IPC分类号： H01L29/72 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469 ,  H01L21/10 ,  H01L21/26

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02205 ,  H01L21/02208 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

摘要翻译： 本发明通常是形成高k电介质层的方法，包括通过原子层沉积将铪化合物沉积到衬底上，包括将铪前体输送到衬底的表面，使铪前体反应并形成铪 将含氮的前体输送到含铪层，形成至少一个铪氮键并将铪化合物沉积到表面。

公开(公告)号：US20080072820A1

公开(公告)日：2008-03-27

申请号：US11767619

申请日：2007-06-25

申请人： Brian Burrows ,  Craig Metzner ,  Dennis Demars ,  Roger Anderson ,  Juan Chacin ,  David Carlson ,  David Ishikawa ,  Jeffrey Campbell ,  Richard Collins ,  Keith Magill ,  Imran Afzal

发明人： Brian Burrows ,  Craig Metzner ,  Dennis Demars ,  Roger Anderson ,  Juan Chacin ,  David Carlson ,  David Ishikawa ,  Jeffrey Campbell ,  Richard Collins ,  Keith Magill ,  Imran Afzal

IPC分类号： B05C11/00

CPC分类号： H01L21/67115 ,  H01L21/67017 ,  H01L21/6719

摘要： The present invention provides methods and apparatus for processing semiconductor substrates. Particularly, the present invention provides a modular processing cell to be used in a cluster tool. The modular semiconductor processing cell of the present invention comprises a chamber having an inject cap, a gas panel module configured to supply one or more processing gas to the chamber through the inject cap, wherein the gas panel module is position adjacent the inject cap. The processing cell further comprises a lamp module positioned below the chamber. The lamp module comprises a plurality of vertically oriented lamps.

摘要翻译： 本发明提供了半导体衬底的处理方法和装置。 特别地，本发明提供了一种在群集工具中使用的模块化处理单元。 本发明的模块化半导体处理单元包括具有注入盖的腔室，配置成通过喷射盖向腔室供应一种或多种处理气体的气体面板模块，其中气体面板模块位于与喷射盖相邻的位置。 处理室还包括位于室下方的灯模块。 灯模块包括多个垂直取向的灯。

公开(公告)号：US20080044569A1

公开(公告)日：2008-02-21

申请号：US11925681

申请日：2007-10-26

申请人： Nyi Myo ,  Kenric Cho ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig Metzner ,  Paul Deaten

发明人： Nyi Myo ,  Kenric Cho ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig Metzner ,  Paul Deaten

IPC分类号： C23C16/00

CPC分类号： C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

摘要： Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的方法。 在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。 腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气体流过膨胀通道。 膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。 腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。 衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。 在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

公开(公告)号：US08524555B2

公开(公告)日：2013-09-03

申请号：US13530238

申请日：2012-06-22

申请人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

发明人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

IPC分类号： H01L21/8238

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/52

摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.

摘要翻译： 描述了用于提供感受器背面恒定发射率的方法和装置。 提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

公开(公告)号：US20080274604A1

公开(公告)日：2008-11-06

申请号：US11744760

申请日：2007-05-04

申请人： Errol Sanchez ,  David Carlson ,  Craig Metzner

发明人： Errol Sanchez ,  David Carlson ,  Craig Metzner

IPC分类号： H01L21/20 ,  C23C16/00

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/52

摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.

摘要翻译： 提供了用于提供感受器背面恒定发射率的方法和装置。 本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。 该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。 还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

公开(公告)号：US20080069951A1

公开(公告)日：2008-03-20

申请号：US11521856

申请日：2006-09-15

申请人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

发明人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

IPC分类号： C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  H01L21/68728 ,  H01L21/68735

摘要： According to one aspect of the invention, an apparatus for reducing auto-doping of the front side of a substrate and reducing defects on the backside of the substrate during an epitaxial deposition process for forming an epitaxial layer on the front side of the substrate comprising: a means for forming a wafer gap region between the backside of the substrate and a susceptor plate, having an adjustable thickness; a means for ventilating auto-dopants out of the wafer gap region with a flow of inert gas, while inhibiting or prohibiting the flow of inert gas over the front side of the substrate; and a means for flowing reactant gases over the surface of the front side of the substrate, while inhibiting or prohibiting the flow of reactant gases near the surface of the backside of the substrate.

摘要翻译： 根据本发明的一个方面，一种用于在衬底的前侧形成外延层的外延沉积工艺期间减少衬底的正面的自动掺杂并减少衬底背面的缺陷的装置，包括： 用于在基板的背面和具有可调节厚度的基座板之间形成晶片间隙区域的装置; 一种用惰性气体流动自由掺杂剂离开晶片间隙区域的方法，同时抑制或阻止惰性气体流过衬底的前侧; 以及用于使反应气体流过衬底前表面的装置，同时抑制或禁止靠近衬底背面表面的反应气流。

公开(公告)号：US20080057737A1

公开(公告)日：2008-03-06

申请号：US11929087

申请日：2007-10-30

申请人： CRAIG METZNER ,  Shreyas Kher ,  Shixue Han

发明人： CRAIG METZNER ,  Shreyas Kher ,  Shixue Han

IPC分类号： H01L21/469

CPC分类号： H01L21/02307 ,  C23C14/083 ,  C23C14/10 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  C23C14/586 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31645 ,  H01L21/31683 ,  H01L29/517 ,  H01L29/78

摘要： A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydrofluoric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

摘要翻译： 在预处理表面上形成电介质叠层的方法。 该方法包括预先清洁半导体晶片以除去天然氧化物，例如通过施加氢氟酸以形成HF最后的表面，用臭氧化的去离子水预处理HF-最后的表面，在预处理后形成电介质叠层 表面，并在围绕晶片的工艺区域中提供NH 3 3流。 或者，该方法包括用NH 3预处理HF-最后表面，在预处理之后形成堆叠，并且在工艺中提供N 2 O 3流 成形后的晶片周围的区域。 该方法还包括使用原位蒸汽产生过程预处理HF-最后的表面，在预处理的表面上形成叠层，以及在成形后退火晶片。 预处理包括在围绕HF最后表面的处理区域中提供惰性气体流，使处理区中的氢与氧化剂反应非常短的时间，并且在反应之后在处理区中提供惰性气体。

公开(公告)号：US20070059948A1

公开(公告)日：2007-03-15

申请号：US11421293

申请日：2006-05-31

申请人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

发明人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.

摘要翻译： 本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。 当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。 在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。 在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。 将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。