公开(公告)号：US20070243849A1

公开(公告)日：2007-10-18

申请号：US11492504

申请日：2006-07-24

申请人： Dima Prikhodko ,  Sergey Nabokin ,  Steven C. Sprinkle ,  Mikhail Shirokov ,  Gene A. Tkachenko ,  Jason Chiesa

发明人： Dima Prikhodko ,  Sergey Nabokin ,  Steven C. Sprinkle ,  Mikhail Shirokov ,  Gene A. Tkachenko ,  Jason Chiesa

IPC分类号： H04B1/28

CPC分类号： H03K17/165 ,  H01P1/15 ,  H03K17/002 ,  H03K17/102 ,  H03K17/693

摘要： According to one exemplary embodiment, a low harmonic switching device includes a first switching block including a first multi-gate FET, where the first switching block is coupled to a first input and a shared output of the low harmonic switching device. A first capacitor is coupled between a first gate and a source of the first multi-gate FET and a second capacitor is coupled between a second gate and a drain of the first multi-gate FET so as to cause a reduction in a harmonic amplitude in the shared output. A resistor can couple the source to the drain of the first multi-gate FET. The first switching block can further include a second multi-gate FET, where a source of the second multi-gate FET is coupled to the drain of the first multi-gate FET and a drain of the second multi-gate FET is coupled to the shared output.

摘要翻译： 根据一个示例性实施例，低谐波开关器件包括第一开关块，其包括第一多栅极FET，其中第一开关模块耦合到低谐波开关器件的第一输入端和共享输出端。 第一电容器耦合在第一多栅极FET的第一栅极和源极之间，并且第二电容器耦合在第一多栅极FET的第二栅极和漏极之间，以便使谐波幅度降低 共享输出。 电阻器可将源极耦合到第一多栅极FET的漏极。 第一开关块还可以包括第二多栅极FET，其中第二多栅极FET的源极耦合到第一多栅极FET的漏极，并且第二多栅极FET的漏极耦合到 共享输出。