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50 条记录 (耗时 0.032 秒)

    Manufacture of semiconductor device with selective amorphousizing
    21.
    发明申请
    Manufacture of semiconductor device with selective amorphousizing 审中-公开
    具有选择性非晶化的半导体器件的制造

    公开(公告)号：US20050236667A1

    公开(公告)日：2005-10-27

    申请号：US11169666

    申请日：2005-06-30

    申请人： Kenichi Goto ,  Hiroshi Morioka ,  Manabu Kojima ,  Kenichi Okabe

    发明人： Kenichi Goto ,  Hiroshi Morioka ,  Manabu Kojima ,  Kenichi Okabe

    IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/45

    CPC分类号： H01L21/26506 ,  H01L21/28035 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659 ,  H01L29/7833

    摘要： A p-channel MOS transistor capable of lowering the height of a gate electrode, suppressing penetration of boron through a gate insulating film, and reducing a source/drain parasitic capacitance. A method for manufacturing a semiconductor device comprises the steps of: (a) forming a gate insulating film on each surface of active regions including an n-type active region; (b) depositing a poly-Si gate electrode layer on the gate insulating film; (c) implanting amorphousizing ions, Ge or Si, to transform an upper portion of the gate electrode layer into amorphous phase; (d) patterning the gate electrode layer to form a gate electrode; (e) forming side wall spacers on side walls of the gate electrode at a temperature not crystallizing the amorphous layer; and (f) implanting p-type impurity ions, B, into the n-type active region by using as a mask the gate electrode and the side wall spacers, to form high concentration source/drain regions.

    摘要翻译： 能够降低栅电极的高度的p沟道MOS晶体管，抑制硼穿过栅极绝缘膜的渗透，并降低源/漏寄生电容。 一种制造半导体器件的方法包括以下步骤：（a）在包括n型有源区的有源区的每个表面上形成栅极绝缘膜; （b）在栅极绝缘膜上沉积多晶硅栅电极层; （c）注入非晶化离子Ge或Si，以将栅电极层的上部转变成非晶相; （d）图案化栅电极层以形成栅电极; （e）在不使非晶层结晶的温度下，在栅电极的侧壁上形成侧壁间隔物; 和（f）通过使用栅电极和侧壁间隔物作为掩模将p型杂质离子B注入到n型有源区中，以形成高浓度源/漏区。

    Inspection method, apparatus and system for circuit pattern
    24.
    发明授权
    Inspection method, apparatus and system for circuit pattern 失效
    检查方法，电路图案的装置和系统

    公开(公告)号：US06903821B2

    公开(公告)日：2005-06-07

    申请号：US10287706

    申请日：2002-11-05

    申请人： Yasuhiko Nara ,  Kazuhisa Machida ,  Mari Nozoe ,  Hiroshi Morioka ,  Yasutsugu Usami ,  Takashi Hiroi ,  Kohichi Hayakawa ,  Maki Ito

    发明人： Yasuhiko Nara ,  Kazuhisa Machida ,  Mari Nozoe ,  Hiroshi Morioka ,  Yasutsugu Usami ,  Takashi Hiroi ,  Kohichi Hayakawa ,  Maki Ito

    IPC分类号： G01Q30/02 ,  G01Q30/04 ,  G03F1/00 ,  G03F7/20 ,  G01B11/00

    CPC分类号： G03F7/70616 ,  G03F1/84 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/30141 ,  H01J37/226 ,  H01J2237/082 ,  H01J2237/2817 ,  H01L22/12

    摘要： Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.

    摘要翻译： 设置用于电路图案的检查方法，装置和系统，其中当通过使用通过照射白光形成的图像，激光束或带电粒子束来检查精细电路图案的情况下需要各种条件时， 其运行效率可以提高。 显示检查对象基板的检查对象区域，并且指定区域的指定地图画面和光学显微镜或电子束显微镜的图像并行显示，从而能够将缺陷分布和缺陷图像 同时看到。 检查条件的项目名称和显示，输入或指示检查条件内容的画面被整合，这些内容与图像平面重叠，层叠显示，并且所有项目名称均以 选项卡格式在内容的图片平面的上部。 当点击所需的项目名称时，切换画面并显示与点击的项目名称对应的内容。

    Continuously variable belt transmission
    26.
    发明授权
    Continuously variable belt transmission 有权
    连续变速皮带传动

    公开(公告)号：US06565465B2

    公开(公告)日：2003-05-20

    申请号：US09858488

    申请日：2001-05-17

    申请人： Masabumi Nishigaya ,  Shinya Kuwabara ,  Masami Sugaya ,  Shinji Kasuga ,  Shoichi Sayo ,  Hiroshi Morioka

    发明人： Masabumi Nishigaya ,  Shinya Kuwabara ,  Masami Sugaya ,  Shinji Kasuga ,  Shoichi Sayo ,  Hiroshi Morioka

    IPC分类号： F16H5900

    CPC分类号： F16H61/66272 ,  F16H55/56 ,  F16H63/065 ,  F16H2061/0046

    摘要： The continuously variable belt transmission is provided with a fixed sheave and a movable sheave provided on a secondary shaft, a first hydraulic chamber that presses the movable sheave in an axial direction, a second hydraulic chamber that gives the movable sheave a pressing force acting in a direction opposite the pressing force given by the first hydraulic chamber, an oil passage connected to the second hydraulic chamber, and an oil receiver disposed along a path from the oil passage to the second hydraulic chamber. The oil receiver is attached to the secondary shaft, a bearing and a bulkhead are disposed on both sides of the oil receiver, an oil passage is provided in the secondary shaft, and a grooved portion provided in the oil receiver connects the second hydraulic chamber and the oil passage.

    摘要翻译： 无级变速皮带传动装置设置有固定滑轮和设置在副轴上的可动滑轮，沿轴向按压可动滑轮的第一液压室，向可动滑轮提供作用在可动滑轮中的按压力的第二液压室 与第一液压室给出的按压力相反的方向，连接到第二液压室的油路和沿着从油路到第二液压室的路径设置的油接收器。 油接收器安装在副轴上，轴承和隔板设置在储油器的两侧，在副轴上设有油通道，设在油槽内的开槽部将第二液压室和 油路。

    Elevated garage
    29.
    发明授权
    Elevated garage 失效
    高架车库

    公开(公告)号：US4936730A

    公开(公告)日：1990-06-26

    申请号：US363376

    申请日：1989-05-26

    申请人： Hiroshi Morioka

    发明人： Hiroshi Morioka

    IPC分类号： E04H6/22 ,  E04H6/28

    CPC分类号： E04H6/225 ,  E04H6/282

    摘要： An elevated garage which includes a vertical framework structure having an entrance, through which cars are introduced; a plurality of parking spaces for accommodating the cars, wherein the packing spaces are piled in vertical one or more rows; an elevator including a lift movable up and down in the framework structure, the lift being adapted to receive a pallet on which the car is placed; an expander provided on the lift, the expander being expandable toward the parking space; a shelf provided in each parking space in such a manner as to be free from the expander, the shelf being adapted to support the pallet; and a rotor for turning the car into an appropriate posture for riding on the pallet.

    摘要翻译： 一个高架车库，其中包括一个具有入口的垂直框架结构，通过该入口引入轿厢; 多个用于容纳轿厢的停车位，其中所述包装空间被堆叠成垂直一行或多行; 电梯，其包括可在所述框架结构中上下移动的电梯，所述升降机适于容纳托架，所述托盘放置在所述托盘上; 设置在电梯上的扩展器，扩展器可扩展到停车位; 在每个停车位设置的架子，以便不受膨胀机的影响，该货架适于支承货盘; 以及用于将汽车转动成适合的姿势以用于骑在托盘上的转子。

    Semiconductor device and method of manufacturing thereof
    30.
    发明授权
    Semiconductor device and method of manufacturing thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08247290B2

    公开(公告)日：2012-08-21

    申请号：US12163168

    申请日：2008-06-27

    申请人： Junichi Ariyoshi ,  Toru Anezaki ,  Hiroshi Morioka

    发明人： Junichi Ariyoshi ,  Toru Anezaki ,  Hiroshi Morioka

    IPC分类号： H01L21/336

    CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11531

    摘要： A method of manufacturing a semiconductor device has forming a first conductive film over a semiconductor substrate, etching the first conductive film, forming a plurality of first conductive patterns arranged in a first direction, and forming a side surface on an outside of a conductive pattern positioned at an end among the plurality of first conductive patterns such that the side surface has a first inclination angle smaller than a second inclination angle of a side surface on an inside of the conductive pattern positioned at the end, forming a first insulation film over the plurality of first conductive patterns, and forming a second conductive pattern over the first insulation film.

    摘要翻译： 一种制造半导体器件的方法，在半导体衬底上形成第一导电膜，蚀刻第一导电膜，形成沿第一方向布置的多个第一导电图案，并且在位于 在所述多个第一导电图案中的一端，使得所述侧表面具有小于位于所述端部的所述导电图案的内侧上的侧表面的第二倾斜角的第一倾斜角度，在所述多个第一导电图案中形成第一绝缘膜 的第一导电图案，并且在第一绝缘膜上形成第二导电图案。