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    Method for forming polycrystalline silicon thin film transistor
    21.
    发明授权
    Method for forming polycrystalline silicon thin film transistor 有权
    多晶硅薄膜晶体管的形成方法

    公开(公告)号：US07026201B2

    公开(公告)日：2006-04-11

    申请号：US11085953

    申请日：2005-03-22

    申请人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

    发明人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

    IPC分类号： H01L21/336

    CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

    摘要： A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

    摘要翻译： 一种形成多晶硅薄膜晶体管的方法。 该方法包括以下步骤：通过结晶方法形成包含多个突起的多晶硅层，该结晶方法由于晶粒之间的碰撞而形成多个突起; 以仅包括多个突起的两个突起的有源图案图案化多晶硅层，所述突起彼此分开并位于栅电极形成区域的两侧; 在图案化的多晶硅层上施加阻挡层，同时部分地覆盖两个突起; 以及在形成在栅电极形成区的两侧的多晶硅层的突起处，通过将掺杂剂离子注入到所得到的层压中，形成源电极和漏电极。

    X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels
    22.
    发明授权
    X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels 有权
    包括双光电导体的X射线像素和包括X射线像素的X射线检测器

    公开(公告)号：US09348037B2

    公开(公告)日：2016-05-24

    申请号：US12923553

    申请日：2010-09-28

    申请人： Sang-wook Kim ,  Jae-chul Park ,  Sun-il Kim ,  Chang-jung Kim

    发明人： Sang-wook Kim ,  Jae-chul Park ,  Sun-il Kim ,  Chang-jung Kim

    IPC分类号： H01L31/08 ,  G01T1/24

    CPC分类号： G01T1/242 ,  H01L31/085

    摘要： Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.

    摘要翻译： 示例性实施例涉及包括双光电导体的X射线检测器。 根据示例性实施例，X射线检测器包括在其上入射X射线的第一感光体和通过第一光电导体透射X射线的第二感光体。 第一光电导体和第二光电导体包括串联结构。 第一光电导体由硅形成并在低能带中吸收X射线，第二光电导体由吸收X射线的能量带的材料形成，该能带高于由硅吸收的X射线的低能带 。

    Large-scale X-ray detectors and methods of manufacturing the same
    23.
    发明授权
    Large-scale X-ray detectors and methods of manufacturing the same 有权
    大型X射线探测器及其制造方法

    公开(公告)号：US08847168B2

    公开(公告)日：2014-09-30

    申请号：US12929203

    申请日：2011-01-07

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： G01T1/24 ,  H01L31/08 ,  H01L27/146

    CPC分类号： G01T1/24 ,  H01L24/24 ,  H01L24/73 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L27/14687 ,  H01L31/085 ,  H01L2224/16225 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

    摘要： Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.

    摘要翻译： 提供了大规模X射线检测器及其制造方法，大规模X射线检测器包括：光电导体层，被配置为根据入射的X射线使用光电导体层的整个面积产生电荷; 所述光电导体层的上表面上的公共电极，被配置为将所述电荷转换为电信号的多个像素电极，在所述感光体层的下表面上并分成多个组，以及多个应用特定 集成电路（ASIC），每个对应于该组中的一个。 每个ASIC被配置为处理通过相应组中的像素电极传送的电信号。 ASIC处理电信号，使得ASIC相对于感光体层的整个区域共同地产生无缝图像信息。

    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor
    28.
    发明申请
    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor 有权
    晶体管，制造晶体管的方法以及包括晶体管的电子器件

    公开(公告)号：US20110175080A1

    公开(公告)日：2011-07-21

    申请号：US12805648

    申请日：2010-08-11

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    IPC分类号： H01L29/12 ,  H01L29/78 ,  H01L21/16

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606

    摘要： Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F).

    摘要翻译： 提供晶体管，制造晶体管的方法和包括晶体管的电子器件，晶体管包括沟道层，分别接触沟道层的相对端的源极和漏极，对应于沟道层的栅极，栅极绝缘层 在沟道层和栅极之间，以及顺序地设置在栅极绝缘层上的第一钝化层和第二钝化层。 第一钝化层覆盖源极，漏极，栅极，栅极绝缘层和沟道层。 第二钝化层包括氟（F）。

    Oxide semiconductors and thin film transistors comprising the same
    29.
    发明授权
    Oxide semiconductors and thin film transistors comprising the same 有权
    氧化物半导体和包括其的薄膜晶体管

    公开(公告)号：US07935964B2

    公开(公告)日：2011-05-03

    申请号：US12213327

    申请日：2008-06-18

    申请人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    发明人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869

    摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.

    摘要翻译： 提供包括其的氧化物半导体和薄膜晶体管（TFT）。 氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。 薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

    Channel layers and semiconductor devices including the same
    30.
    发明申请
    Channel layers and semiconductor devices including the same 有权
    通道层和包括其的半导体器件

    公开(公告)号：US20100006834A1

    公开(公告)日：2010-01-14

    申请号：US12458491

    申请日：2009-07-14

    申请人： Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    发明人： Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    IPC分类号： H01L29/26 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof.

    摘要翻译： 公开了包括沟道层的通道层和半导体器件。 沟道层可以包括多层结构。 形成沟道层的层可具有不同的载流子迁移率和/或载流子密度。 沟道层可以具有双层结构，其包括可由不同氧化物形成的第一层和第二层。 晶体管的特性可以根据用于形成沟道层的材料和/或其厚度而变化。