公开(公告)号：US20100061016A1

公开(公告)日：2010-03-11

申请号：US12231756

申请日：2008-09-05

申请人： Cherng-Chyi Han ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Han ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US07364840B2

公开(公告)日：2008-04-29

申请号：US10771482

申请日：2004-02-03

申请人： Feng-Yu Tsai ,  Jiun-Ting Lee

发明人： Feng-Yu Tsai ,  Jiun-Ting Lee

IPC分类号： G03F7/00

CPC分类号： G03F7/40 ,  G03F7/2024

摘要： A technique is disclosed that combines a bilayered photoresist structure, similar to that which is already in use in the MR head industry, with a post development UV irradiation treatment which reduces the manufacturable feature-size to be below the resolution limit. The technique is compatible with current manufacturing processes, requires no additional investment, and can be extended to ultra-small feature sizes.

摘要翻译： 公开了一种技术，其结合了类似于MR头工业中已经使用的双层光致抗蚀剂结构，其具有后处理UV照射处理，其将可制造的特征尺寸降低到低于分辨率极限。 该技术与当前的制造工艺兼容，不需要额外的投资，并可扩展到超小尺寸。

公开(公告)号：US07146711B2

公开(公告)日：2006-12-12

申请号：US10318455

申请日：2002-12-13

申请人： Cherng Chyi Han ,  Mao-Min Chen ,  Jiun-Ting Lee

发明人： Cherng Chyi Han ,  Mao-Min Chen ,  Jiun-Ting Lee

IPC分类号： G11B5/127 ,  H04R31/00 ,  G11B5/39

CPC分类号： B82Y10/00 ,  G11B5/3912 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for forming a planar GMR read-head having a narrow read gap, a narrow track-width and being well insulated from its lower shield. The method requires the formation of a planarized bottom magnetic shield in which concave regions, symmetrically disposed about a track-width region, are filled with a layer of dielectric to provide added insulation. The dielectric filled shield is planarized and an additional planar dielectric layer, a thin planar GMR sensor layer and a planar PMGI layer of uniform thickness is formed on it. A layer of photoresist is deposited on the PMGI layer and a bi-layer lift-off stencil of uniform height above the GMR layer and symmetric overhang regions is formed. The uniformity of the lift-off stencil, which is a result of the planarity of the layers on which it is formed, allows the deposition of conductive lead and biasing layers with controlled overspread.

摘要翻译： 一种用于形成具有窄读取间隙，窄轨道宽度并且与其下屏蔽件良好绝缘的平面GMR读取头的方法。 该方法需要形成平面化的底部磁屏蔽，其中围绕磁道 - 宽度区域对称设置的凹区填充有电介质层以提供增加的绝缘。 介质填充的屏蔽层被平坦化，并且在其上形成附加的平面介电层，薄平面GMR传感器层和均匀厚度的平面PMGI层。 一层光致抗蚀剂沉积在PMGI层上，形成了高于GMR层和对称悬垂区域的均匀高度的双层剥离模版。 剥离模板的均匀性是由其形成的层的平面度的结果，允许导电引线和偏压层的沉积受到控制的超扩展。