公开(公告)号：US20110241050A1

公开(公告)日：2011-10-06

申请号：US13077254

申请日：2011-03-31

申请人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

发明人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

公开(公告)号：US20110241045A1

公开(公告)日：2011-10-06

申请号：US13018557

申请日：2011-02-01

申请人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

发明人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

摘要翻译： 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。