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    Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
    22.
    发明授权
    Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
    用于金属等离子体气相沉积和重新溅射的装置，其具有通过工件施加的源极和偏置功率频率

    公开(公告)号：US07399943B2

    公开(公告)日：2008-07-15

    申请号：US11052011

    申请日：2005-02-03

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： B23K10/00

    CPC分类号： H01J37/3405 ,  C23C14/046 ,  C23C14/352 ,  H01J37/32082

    摘要： A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

    摘要翻译： 等离子体反应器包括真空室，该真空室包括侧壁，天花板和在室底部附近的晶片支撑基座，以及耦合到该室的真空泵。 工艺气体入口连接到腔室和连接到工艺气体入口的工艺气体源。 反应器还包括在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座并具有适于激发动电子的频率的RF等离子体源功率发生器，以及RF等离子体偏置 发电机耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

    Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target
    25.
    发明授权
    Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target 有权
    用于等离子体增强物理气相沉积的方法，其具有施加到目标的RF源功率

    公开(公告)号：US08062484B2

    公开(公告)日：2011-11-22

    申请号：US11222230

    申请日：2005-09-07

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.

    摘要翻译： 在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入 载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。 该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。 该方法优选地包括维持目标磁场并扫描目标上的目标磁场。

    Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
    26.
    发明授权
    Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron 有权
    具有RF源功率的物理气相沉积等离子体反应器施加到靶并具有磁控管

    公开(公告)号：US08562798B2

    公开(公告)日：2013-10-22

    申请号：US11222231

    申请日：2005-09-07

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  H01B11/02 ,  H01B11/06 ,  H02G3/04 ,  H05K1/09

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.

    摘要翻译： 物理气相沉积反应器包括金属溅射靶，耦合到金属溅射靶的直流溅射功率源和面向金属溅射靶的晶片支撑基座。 可移动磁体阵列与金属溅射靶的与晶片支撑基座相对的一侧相邻。 固体金属RF馈送杆接合金属溅射靶并且在与晶片支撑基座相对的一侧上从靶的表面延伸。 VHF阻抗匹配电路耦合到与金属溅射靶相对的RF馈电杆的端部以及耦合到所述VHF阻抗匹配电路的VHF RF发电发生器。 优选地，反应器还包括中心轴，可动磁体阵列围绕该中心轴可旋转，中心轴具有轴向延伸的中空通道，RF馈送杆延伸穿过通道。

    Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
    28.
    发明申请
    Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface 有权
    在晶片表面具有各向同性离子速度分布的物理气相沉积方法

    公开(公告)号：US20090229969A1

    公开(公告)日：2009-09-17

    申请号：US12077067

    申请日：2008-03-14

    申请人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

    发明人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

    IPC分类号： C23C14/34

    CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

    摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

    摘要翻译： 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。