公开(公告)号：US07326515B2

公开(公告)日：2008-02-05

申请号：US11004798

申请日：2004-12-07

申请人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

发明人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

公开(公告)号：US07316885B2

公开(公告)日：2008-01-08

申请号：US10535533

申请日：2003-12-01

申请人： Hideo Hada ,  Miwa Miyairi ,  Naotaka Kubota ,  Takeshi Iwai

发明人： Hideo Hada ,  Miwa Miyairi ,  Naotaka Kubota ,  Takeshi Iwai

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/40 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： There are provided a method of forming a resist pattern that enables the resist pattern to be formed with good control of the pattern size, as well as a positive resist composition used in the method, and a layered product formed using the positive resist composition. In the above method a positive resist composition comprising a resin component (A), which contains a structural unit (a1) derived from a (meth)acrylate ester represented by a general formula (I) shown below, and displays increased alkali solubility under action of acid, and an acid generator component (B) that generates acid on exposure is applied to a substrate, a prebake is conducted, the resist composition is selectively exposed, post exposure baking (PEB) is conducted, alkali developing is then used to form a resist pattern, and the pattern size of the thus produced resist pattern is then narrowed by heat treatment.

摘要翻译： 提供一种形成抗蚀剂图案的方法，其能够形成对图案尺寸的良好控制，以及该方法中使用的正性抗蚀剂组合物和使用正性抗蚀剂组合物形成的层叠体。 在上述方法中，含有含有由下述通式（I）表示的（甲基）丙烯酸酯衍生的结构单元（a1））的树脂成分（A）的正型抗蚀剂组合物在动作中显示出增加的碱溶解性 的酸，并且在基材上产生酸的酸发生剂组分（B）施加到基材上，进行预烘烤，选择性地暴露抗蚀剂组合物，进行曝光后烘烤（PEB），然后用碱显影形成 抗蚀剂图案，然后通过热处理使由此制得的抗蚀剂图案的图案尺寸变窄。

公开(公告)号：US20070190455A1

公开(公告)日：2007-08-16

申请号：US11621437

申请日：2007-01-09

申请人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

发明人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

IPC分类号： G03C1/00

CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

摘要翻译： 一种正型树脂组合物，其包含（A）树脂组分，其在所述主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团， 在碱的作用下，碱的溶解度增加，（B）暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元和 衍生自丙烯酸酯的结构单元。 根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。

公开(公告)号：US07129020B2

公开(公告)日：2006-10-31

申请号：US10443746

申请日：2003-05-23

申请人： Kazumasa Wakiya ,  Naotaka Kubota ,  Shigeru Yokoi ,  Takayuki Haraguchi

发明人： Kazumasa Wakiya ,  Naotaka Kubota ,  Shigeru Yokoi ,  Takayuki Haraguchi

IPC分类号： G03F7/11

CPC分类号： G03F7/091

摘要： Disclosed is a liquid coating composition for forming a top antireflective film that contains a polymer, the polymer containing, as a structural unit, a (meth)acrylate unit that has at least one polycyclic hydrocarbon group on its side chain and becomes more soluble to alkali by the action of an acid, the liquid coating composition comprising: (a) a water-soluble, film-forming component; (b) at least one fluorine-based compound selected from a perfluoroalkylcarboxylic acid having 4 or more carbon atoms and a perfluoroalkylsulfonic acid having 5 or more carbon atoms; and (c) a fluoroalkylsulfonic acid having 1–4 carbon atoms and/or an acidic compound consisting of a hydrocarbon having 1–4 carbon atoms in which one or more hydrogen atoms are substituted with a fluoloalkylsulfonyl group(s), with the proviso that one or more carbon atoms therein may be substituted with a nitrogen atom(s).

公开(公告)号：US20060127799A1

公开(公告)日：2006-06-15

申请号：US10537162

申请日：2003-12-02

申请人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya ,  Kazuhiro Fujii ,  Kenichi Sato

发明人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya ,  Kazuhiro Fujii ,  Kenichi Sato

IPC分类号： G03C1/76

CPC分类号： G03F7/32 ,  G03F7/0397 ,  G03F7/40

摘要： A resist pattern forming method which can prevent a fine resist pattern from collapsing in a drying step after a development treatment in case of forming a resist pattern is provided. This method comprises applying a positive resist composition comprising a resin component (A), which has an alkali-soluble unit content of less than 20 mol % and also has an acid dissociable dissolution inhibiting group, alkali solubility thereof being enhanced by action of acid, an acid generator component (B) which generates an acid under exposure, and an organic solvent (C) which dissolves the components (A) and (B) on a substrate; subjecting the resulting film to prebaking, selective exposure, post exposure baking and alkali development; performing a displacing step of displacing a liquid existing on the substrate with a displacing liquid at least one time; displacing the displacing liquid with a liquid for critical drying; and performing a drying step of drying the liquid for critical drying via a critical state.

摘要翻译： 提供了抗蚀剂图案形成方法，其可以在形成抗蚀剂图案的情况下，在显影处理之后，在干燥步骤中防止细小的抗蚀剂图案塌陷。 该方法包括涂布含有碱溶性单元含量小于20摩尔％的树脂成分（A）的正型抗蚀剂组合物，并且还具有酸解离溶解抑制基团，其碱溶性通过酸的作用而增强， 产生暴露酸的酸产生剂组分（B）和在基材上溶解组分（A）和（B）的有机溶剂（C）; 对所得膜进行预烘烤，选择性曝光，曝光后烘烤和碱显影; 执行置换步骤，用置换液体至少一次移动存在于基板上的液体; 用液体移动置换液体进行临界干燥; 并执行干燥步骤，用于通过临界状态干燥用于临界干燥的液体。

公开(公告)号：US06864036B2

公开(公告)日：2005-03-08

申请号：US10053622

申请日：2002-01-24

申请人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Naotaka Kubota ,  Miwa Miyairi ,  Takako Hirosaki ,  Koutaro Endo

发明人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Naotaka Kubota ,  Miwa Miyairi ,  Takako Hirosaki ,  Koutaro Endo

IPC分类号： G03F7/004 ,  G03F7/038

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  Y10S430/106

摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.

摘要翻译： 公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）酸产生剂和（C）交联剂，其中组分（B）是鎓盐化合物 选自碘鎓盐化合物和锍盐化合物，具有特定氟代烷基磺酸根离子作为阴离子部分，组分（C）是通过羟甲基或烷氧基甲基取代至少一个氮原子的特定亚乙基脲化合物。 光致抗蚀剂组合物特别适用于在具有良好的图案分辨率的水不溶性有机抗反射膜的底涂层和具有良好温度纬度的图案化抗蚀剂层的正交截面轮廓的基材表面上形成光致抗蚀剂层 在用于潜像形成的后曝光烘烤处理中。

公开(公告)号：US06406829B1

公开(公告)日：2002-06-18

申请号：US09638872

申请日：2000-08-15

申请人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Naotaka Kubota ,  Miwa Miyairi ,  Takako Hirosaki ,  Koutaro Endo

发明人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Naotaka Kubota ,  Miwa Miyairi ,  Takako Hirosaki ,  Koutaro Endo

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/128

摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.

摘要翻译： 公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）酸产生剂和（C）交联剂，其中组分（B）是鎓盐化合物 具有特定的氟烷基磺酸根离子作为阴离子部分，组分（C）是通过羟甲基或烷氧基甲基取代至少一个氮原子的特定亚乙基脲化合物。 光致抗蚀剂组合物特别适用于在具有良好的图案分辨率的水不溶性有机抗反射膜的底涂层和具有良好温度纬度的图案化抗蚀剂层的正交截面轮廓的基材表面上形成光致抗蚀剂层 在用于潜像形成的后曝光烘烤处理中。

公开(公告)号：US08293449B2

公开(公告)日：2012-10-23

申请号：US10466473

申请日：2002-11-29

申请人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Hideo Hada

发明人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Hideo Hada

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

CPC分类号： G03F7/0397

摘要： There is provided a positive type resist composition comprising (A) a resin component with only units derived from an acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent component, wherein the resin component (A) is a copolymer comprising (a1) a structural unit derived from an acrylate ester comprising, as an acid dissociable dissolution inhibiting group on a side chain, a polycyclic dissolution inhibiting group which is eliminated more easily than a 2-methyl-2-adamantyl group, (a2) a structural unit derived from an acrylate ester comprising a lactone containing polycyclic group on a side chain, and (a3) a structural unit derived from an acrylate ester comprising a hydroxyl group containing polycyclic group on a side chain; as well as a resist pattern formation method using such a composition.

摘要翻译： 提供一种正型抗蚀剂组合物，其包含（A）仅具有源自主链中的丙烯酸酯的单元的树脂组分，其在碱的作用下在碱中的溶解度增加，（B）产生酸产生剂组分 （C）有机溶剂成分，其中，所述树脂成分（A）为共聚物，所述共聚物包含（a1）来自丙烯酸酯的结构单元，所述结构单元作为侧链上的酸解离溶解抑制基团， 多环溶解抑制基比2-甲基-2-金刚烷基更容易被除去，（a2）衍生自在侧链上含有多环内酯的丙烯酸酯的结构单元和（a3）得自 由侧链上含有羟基的多环基团的丙烯酸酯酯化而成; 以及使用这种组合物的抗蚀剂图案形成方法。

公开(公告)号：US07723007B2

公开(公告)日：2010-05-25

申请号：US10589681

申请日：2005-01-28

申请人： Toshiyuki Ogata ,  Syogo Matsumaru ,  Yohei Kinoshita ,  Hideo Hada ,  Daiju Shiono ,  Hiroaki Shimizu ,  Naotaka Kubota

发明人： Toshiyuki Ogata ,  Syogo Matsumaru ,  Yohei Kinoshita ,  Hideo Hada ,  Daiju Shiono ,  Hiroaki Shimizu ,  Naotaka Kubota

IPC分类号： G03F7/004 ,  C07C61/26 ,  C08F32/08

CPC分类号： G03F7/0397 ,  C07C69/54 ,  C07C2603/74 ,  C08F220/28 ,  C08F290/06 ,  C08F290/061 ,  C09D133/14 ,  G03F7/0046 ,  Y10S430/108 ,  Y10S430/111

摘要： The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1  (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5).

摘要翻译： 本发明提供一种高分子化合物，其可以构成光刻胶组合物，其能够具有优异的分辨率，形成具有良好矩形性的精细图案，即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性， 并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合 以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。 光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团（i）的高分子化合物，其中碱溶性基团（i）为选自醇羟基，羧基或酚类中的至少一个取代基 羟基，取代基被通过通式（1）表示的酸解离的溶解抑制基团（ⅱ）保护：-CH 2 -OCH 2 n R 1（1）（其中R 1表示含有不多于20个碳的脂环族基团 原子，可以含有氧原子，氮原子，硫原子或卤素原子，n表示0或1〜5的整数。

公开(公告)号：US20060009583A1

公开(公告)日：2006-01-12

申请号：US10535933

申请日：2003-12-01

申请人： Naotaka Kubota ,  Takeshi Iwai ,  Hideo Hada

发明人： Naotaka Kubota ,  Takeshi Iwai ,  Hideo Hada

IPC分类号： C08L33/10 ,  B05D3/02 ,  B32B27/30

CPC分类号： G03F7/0397 ,  C08F220/10 ,  Y10T428/31935

摘要： There is provided a photoresist composition capable of forming a resist pattern with minimal LER, and a method of forming a resist pattern. This method is a method of producing a (meth)acrylic acid derivative polymer for use as a resist by radical polymerization of a monomer mixture comprising (a1) a (meth)acrylate ester with an acid dissociable, dissolution inhibiting group, and (a2) a (meth)acrylate ester with a lactone unit, wherein (a1) and (a2) utilize compounds such that when each compound (a1) and (a2) is individually subjected to homopolymerization, under identical conditions to the radical polymerization, and a residual monomer ratio is determined 10 minutes after the start of the homopolymerization, the difference between the minimum residual monomer ratio and the maximum residual monomer ratio is no more than 15 mol %.

摘要翻译： 提供能够以最小的LER形成抗蚀剂图案的光致抗蚀剂组合物和形成抗蚀剂图案的方法。 该方法是通过自由基聚合制备（甲基）丙烯酸衍生物聚合物的方法，所述单体混合物包含（a1）（甲基）丙烯酸酯与酸解离的溶解抑制基团和（a2） 具有内酯单元的（甲基）丙烯酸酯，其中（a1）和（a2）使用化合物，使得当在相同的条件下使各化合物（a1）和（a2）分别进行均聚时， 在均聚开始10分钟后确定单体比例，最小残留单体比和最大残留单体比之差不大于15摩尔％。