摘要:
A refrigerator has a machine chamber disposed in a bottom part of a refrigerator body, a cover for covering the machine chamber, upper heat discharge passages formed in side edge portions of a rear surface of the refrigerator body, lower heat discharge passages formed in offsetted portions of both sides of the machine chamber cover, and heat discharge ports provided in a wall of each of the lower heat discharge passages for providing a communication between the lower and the upper heat discharge passages. A main condenser of the refrigerator is mounted on a top of the refrigerator body and is covered by a decorative cover.
摘要:
A structure analysis device comprises a storage means wherein modules are stored, and an analysis means for carrying out a structural analysis of a prescribed subject module of the modules which are stored in the storage means. If a hierarchical structure of a first subject range and a hierarchical structure of a second subject range of the subject module are the same, the analysis means creates similarity notification information in association with the first subject range and/or the second subject range. The first subject range and the second subject range are respectively different subject ranges of the subject ranges of the subject modules which are acquired from the storage means. The similarity notification information denotes that respectively similar subject ranges are present in the subject module.
摘要:
The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in an insulating film over the main surface of a semiconductor substrate; and the upper electrode is comprised of a film stack of a TiN film (lower metal film) and a Ti film (cap metal film) formed over the TiN film (lower metal film).
摘要:
In one aspect, an impedance component which exhibits a high impedance in a high frequency region is arranged on a high pressure line formed on a secondary side of a transformer. The potential difference generated at both ends of the impedance component is used to detect an abnormal electrical discharge generated in the high pressure line. When the abnormal electrical discharge is detected, a switching operation is stopped by a controlling circuit whereby a protection operation is performed.
摘要:
An airbag for a front passenger's seat includes a left outer panel, right outer panel, left inner panel and right inner panel. The left and right outer panels are prepared as laterally symmetrical separate entities. Each of the left and right inner panels includes at the upper front end at full inflation a crossing edge that extends in a transverse direction on the airbag at full inflation. Each of the left and right outer panels includes at the upper periphery a central extended region that includes a joint edge for joint with the crossing edge of each of the inner panels. The central extended regions of the left and right outer panels are coupled together at their circumferences except the joint edges.
摘要:
In one aspect, an impedance component which exhibits a high impedance in a high frequency region is arranged on a high pressure line formed on a secondary side of a transformer. The potential difference generated at both ends of the impedance component is used to detect an abnormal electrical discharge generated in the high pressure line. When the abnormal electrical discharge is detected, a switching operation is stopped by a controlling circuit, whereby a protection operation is performed.
摘要:
A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
摘要:
A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.
摘要:
A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
摘要:
According to the present invention, when image data are subjected to quantization processing using an error diffusion method, the generation of a striped pattern which is a cause for deterioration of picture quality in the error diffusion method is prevented. In the present invention, an original image is read and image data are generated. The image data obtained by reading the original image are quantized using an error diffusion method, and the quantized image data can be output and recorded by a thermal-head printer. Furthermore, according to the present invention, an error between the density of an input image and the density of an output image after being subjected to a quantization processing using an error diffusion method is perfectly preserved. In an image processing apparatus for performing a quantization by dispersing an error between input image data and output image data which arises when the input image data are quantized, to image data of surrounding picture elements, the error between the input image data and the output image data is computed or otherwise determined, the error is subjected to a predetermined weighting processing, the error subjected to the weighting processing is dispersed to surrounding picture elements, and a surplus of the error generated in the weighting processing is corrected.