摘要:
In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value. Another aspect of the invention lies in the use of column switches between a common data line and data lines of the memory arrays for coupling only one data line at a time through the column switch to the sense amplifier. In addition, a built-in error-correcting-code circuit is provided which operates in conjunction with a selecting circuit so that memory cells delivering a predetermined set of data are spaced apart from one another by at least predetermined distances to reduce the likelihood of errors from immediately adjacent memory cells.
摘要:
In a read only semiconductor memory, signal lines such as data lines are subjected to an undesired parasitic capacitance which restricts the signal changing rate along the lines. The parasitic capacitance which is driven by a memory cell will become increasingly higher as the memory capacity is increased. According to the present invention, a differential sense amplifier is used to amplify the data signals which are read out of the memory cell. At the same time, a dummy cell is used to generate a reference potential which is to be referred to by the differential sense amplifier. In particular, a dummy cell arrangement is provided wherein each dummy cell includes at least two series-connected semiconductor elements to provide a predetermined dummy cell conductance to establish a reference value. Another aspect of the invention lies in the use of column switches between a common data line and data lines of the memory arrays for coupling only one data line at a time through the column switch to the sense amplifier. In addition, a built-in error-correcting-code circuit is provided which operates in conjunction with a selecting circuit so that memory cells delivering a predetermined set of data are spaced apart from one another by at least predetermined distances to reduce the likelihood of errors from immediately adjacent memory cells.
摘要:
A semiconductor integrated circuit device which constitutes a dynamic RAM has an automatic refresh circuit that contains a refresh timer circuit. The refresh timer circuit has a program element such as a fuse element. The program element is programmed depending upon the data holding characteristics of the dynamic memory cells. Therefore, the refresh period is changed depending upon the characteristics of the dynamic memory cells. According to this construction, the refresh period changes and, as a result, any undesired refresh operation is prevented from being executed, making it possible to reduce the amount of electric power consumed by the circuit device.
摘要:
The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5.
摘要:
The invention relates to a CMP polishing liquid comprising a medium and silica particles as an abrasive grain dispersed into the medium, characterized in that: (A1) the silica particles have a silanol group density of 5.0/nm2 or less; (B1) a biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm; and (C1) an association degree of the silica particles is 1.1 or more. The invention provides a CMP polishing liquid which has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed, and a polishing method producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.
摘要:
A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.
摘要:
The present invention can provide a polishing liquid for CMP having good dispersion stability and a high polishing rate in polishing of interlayer insulating films and a polishing method. Disclosed a polishing liquid for CMP comprising: a medium; and colloidal silica particles dispersed in the medium, a blending amount of the colloidal silica particles being 2.0 to 8.0% by mass relative to 100% by mass of the polishing liquid, wherein the colloidal silica particles satisfy the following conditions (1) to (3): (1) a two-axis average primary particle diameter (R1) obtained from images of twenty arbitrarily selected colloidal silica particles observed by a scanning electron microscope is within the range of 35 to 55 nm; (2) a value S1/S0 obtained by dividing a specific surface area (S1) of a colloidal silica particle measured by BET method by a calculated specific surface area (S0) of a true sphere having the same particle diameter as the two-axis average primary particle diameter (R1) determined by (1) above is 1.20 or less; and (3) a ratio, association degree: RS/R1, of a secondary particle diameter (RS) of the colloidal silica particles measured with a dynamic light scattering particle size distribution analyzer and the two-axis average primary particle diameter (R1) determined by (1) above in the polishing liquid for CMP is 1.30 or less.
摘要:
In an injection device 10 having a plunger 11 reciprocably inserted into a heating cylinder 16, in which a molten material M is injected by the plunger 11 via a nozzle 21, a sealing portion 13 set so that the molten material M is prevented from easily entering a gap A between the plunger 11 and an inner wall 32 of the heating cylinder 16 is provided on the portion of the plunger 11, on the side of the nozzle 21, and the portion of the sealing portion 13, on the side of the nozzle 21 is a core keeping portion 14 provided so that an annular portion 20 which is formed on a front portion of the plunger 11 and is connected to a storage portion 19 of the molten material M is formed between the core keeping portion 14 and the inner wall 32 of the heating cylinder 16.
摘要:
An intended image data structure is assumed to have a color information storing region and a pixel information storing region as its components. First, consider that the color information storing region within the image data structure is divided into a plurality of subregions, and a corresponding bit value is defined for each of the subregions. Next, an index number stored for each of pixels within the pixel information storing region is changed to an index number belonging to a subregion corresponding to a bit value of information to be embedded. In this way, one bit or more of information can be embedded for each pixel. Thus, a large amount of information can be embedded into a small-size image composed of simple shapes and having a small number of colors without degrading the image quality, and the information can be extracted from the image in which it has been embedded.
摘要:
An ordinary read/write operation (normal operation) and a refresh operation are separated from one another and the number of read amplification circuits or in other words, the number of sense amplifiers operating during the normal operation is made smaller than that during the refresh operation. Accordingly, a bit line charge/discharge current during the normal operation can be reduced.