Light emitting transistor
    22.
    发明申请
    Light emitting transistor 审中-公开
    发光晶体管

    公开(公告)号:US20070284616A1

    公开(公告)日:2007-12-13

    申请号:US11808158

    申请日:2007-06-07

    IPC分类号: H01L31/00

    CPC分类号: H01L33/0004

    摘要: A light emitting transistor comprises a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on a predetermine region of the collector layer; a collector electrode formed on the collector layer where the base layer is not formed; a first conductivity-type emitter layer formed on a predetermine region of the base layer; a base electrode formed on the base layer where the emitter layer is not formed; an emitter electrode formed on the emitter layer; a first activation layer formed between the collector layer and the base layer; and a second activation layer formed between the base layer and the emitter layer.

    摘要翻译: 发光晶体管包括形成在基板上的第一导电型集电极层; 形成在所述集电体层的预定区域上的第二导电型基底层; 形成在未形成基底层的集电体层上的集电极; 形成在所述基底层的预定区域上的第一导电型发射极层; 形成在未形成发射极层的基底层上的基极; 形成在发射极层上的发射电极; 在所述集电体层和所述基极层之间形成的第一活化层; 以及形成在所述基底层和所述发射极层之间的第二激活层。

    Touch panel
    23.
    发明授权
    Touch panel 失效
    触控面板

    公开(公告)号:US08692791B2

    公开(公告)日:2014-04-08

    申请号:US13338927

    申请日:2011-12-28

    IPC分类号: G06F3/041

    CPC分类号: G06F3/0416 G06F2203/04103

    摘要: Disclosed herein is a touch panel. A touch panel according to a first preferred embodiment of the present invention includes: a base member; a transparent electrode formed in an active area of the base member; an insulator formed in a bezel area of the base member, and convexly protruded from the base member; and an electrode wiring formed on an exposed surface of the insulator. In addition, a touch panel according to a second preferred embodiment of the present invention includes: a base member having a groove portion formed such that an exposed surface thereof has a concave curved surface; a transparent electrode formed in an active area; and an electrode wire connected to one end or both ends of the transparent electrode and formed on the exposed surface of the groove portion.

    摘要翻译: 这里公开了触摸面板。 根据本发明的第一优选实施例的触摸面板包括:基座构件; 形成在所述基底构件的有源区域中的透明电极; 绝缘体,其形成在所述基底构件的边框区域中,并且从所述基底构件凸出地突出; 以及形成在绝缘体的暴露表面上的电极布线。 此外,根据本发明第二优选实施例的触摸面板包括:基部构件,其具有形成为使得其暴露表面具有凹曲面的凹槽部分; 形成在有源区的透明电极; 以及连接到透明电极的一端或两端并形成在凹槽部分的暴露表面上的电极线。

    CAPACITIVE TOUCH PANEL AND METHOD OF MANUFACTURING THE SAME
    24.
    发明申请
    CAPACITIVE TOUCH PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    电容触控面板及其制造方法

    公开(公告)号:US20120062505A1

    公开(公告)日:2012-03-15

    申请号:US12978731

    申请日:2010-12-27

    摘要: Disclosed is a capacitive touch panel, which includes a transparent substrate, transparent electrodes formed on one surface of the transparent substrate, and electrode wires formed on the other surface of the transparent substrate, wherein the transparent substrate includes through holes which are formed therethrough and are filled with a filler so that the transparent electrodes are electrically connected with the electrode wires, and in which the patterned transparent electrodes are connected with the electrode wires by the through holes formed on the transparent electrodes, thus increasing the force of adhesion between the electrode wires and the transparent electrodes, and also, the through holes are filled with a filler and thus the transparent electrodes and the electrode wires are electrically connected with each other, thus reducing contact resistance.

    摘要翻译: 公开了一种电容触摸面板,其包括透明基板,形成在透明基板的一个表面上的透明电极和形成在透明基板的另一个表面上的电极线,其中透明基板包括穿过其形成的通孔, 填充有填充物,使得透明电极与电极线电连接,并且其中图案化的透明电极通过形成在透明电极上的通孔与电极线连接,从而增加电极线之间的粘附力 并且透明电极以及填充填充物的通孔,因此透明电极和电极线彼此电连接,从而降低接触电阻。

    LIGHT EMITTING DEVICE
    25.
    发明申请
    LIGHT EMITTING DEVICE 失效
    发光装置

    公开(公告)号:US20110315957A1

    公开(公告)日:2011-12-29

    申请号:US13224676

    申请日:2011-09-02

    IPC分类号: H01L33/06

    摘要: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    摘要翻译: 提供了一种结构简单的发光器件,其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括:半导体层; 形成在所述半导体层上的有源层,所述有源层包括量子阱结构,量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    Light emitting device for alternating current source
    26.
    发明申请
    Light emitting device for alternating current source 审中-公开
    交流电源用发光装置

    公开(公告)号:US20080185595A1

    公开(公告)日:2008-08-07

    申请号:US12068392

    申请日:2008-02-06

    IPC分类号: H01L33/00

    摘要: There is provided a light emitting device that can reduce the size of a light emitting device module by using a more simplified light emitting device that directly uses an alternating current source, prevent a decrease in luminous efficiency that is caused due to the use of a separate driving device, solve a problem with an ohmic contact of a p-type electrode, reduce the number of electrodes, and secure a larger area of light emission. A light emitting device for an alternating current source according to an aspect of the invention includes a first conductive type first semiconductor layer, a first electrode formed on the first conductive type first semiconductor layer and electrically connected to the alternating current source, a second conductive type second semiconductor layer formed on the first conductive type first semiconductor layer, a first conductive type third semiconductor layer formed on the second conductive type second semiconductor layer, and a second electrode formed on the third semiconductor layer and electrically connected to the alternating current source. Here, the light emitting device operates in response to a voltage from the alternating current source through the first electrode and the second electrode.

    摘要翻译: 提供了一种发光装置,其可以通过使用直接使用交流电源的更简化的发光装置来减小发光装置模块的尺寸,防止由于使用单独的使用而导致的发光效率的降低 驱动装置,解决p型电极的欧姆接触的问题,减少电极的数量,并确保更大的发光面积。 根据本发明的一个方面的用于交流电源的发光器件包括第一导电型第一半导体层,形成在第一导电型第一半导体层上并与电流源电连接的第一电极,第二导电型 形成在第一导电型第一半导体层上的第二半导体层,形成在第二导电型第二半导体层上的第一导电型第三半导体层和形成在第三半导体层上并与电流源电连接的第二电极。 这里,发光装置响应于来自交流电源的电压通过第一电极和第二电极而工作。

    Semiconductor light emitting device and method of manufacturing the same
    27.
    发明申请
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20080142823A1

    公开(公告)日:2008-06-19

    申请号:US11896667

    申请日:2007-09-05

    IPC分类号: H01L33/00

    摘要: There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.

    摘要翻译: 提供了使用形成在纳米线结构上的荧光膜的半导体发光器件及其制造方法,该器件包括:衬底; 发光结构,其包括依次形成在所述基板上的第一导电类型半导体层,有源层和第二导电类型半导体层; 形成在发光结构上并由透明材料形成的多个纳米线结构; 以及形成在所述多个纳米线结构中的每一个的至少上表面和侧表面上的荧光膜。

    Light emitting transistor
    28.
    发明申请
    Light emitting transistor 失效
    发光晶体管

    公开(公告)号:US20080116465A1

    公开(公告)日:2008-05-22

    申请号:US11878680

    申请日:2007-07-26

    IPC分类号: H01L33/00

    摘要: Provided is a light emitting transistor comprising a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on the collector layer; and a first conductivity-type emitter layer formed on the base layer. At least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods.

    摘要翻译: 提供一种发光晶体管,其包括形成在基板上的第一导电型集电极层; 形成在集电体层上的第二导电型基层; 以及形成在基底层上的第一导电型发射极层。 集电极层,基极层和发射极层中的至少一个具有多个纳米棒的纳米棒结构。