公开(公告)号：US20070247074A1

公开(公告)日：2007-10-25

申请号：US11410780

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： H01J7/24

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the process region at a level that provides the desired plasma ion density. The plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers. The VHF capacitively coupled power may be applied from the ceiling or from the wafer support.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入室中，将VHF等离子体源功率电容耦合到层叠在晶片上的室的处理区域，同时将RF等离子体源功率感应耦合到工艺区域 。 通过将等离子体源功率的总量以感应和电容耦合到处理区域中的水平提供期望的等离子体离子密度来建立特定的等离子体离子密度水平。 通过调节（VHF）电容耦合功率和电感耦合功率之间的比例来控制处理区域中的等离子体离子密度径向分布，同时继续保持总等离子体源功率的水平。 该方法还可以包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处离子能量的平均值和总体分布。 VHF电容耦合功率可以从天花板或从晶片支架施加。

公开(公告)号：US20070247073A1

公开(公告)日：2007-10-25

申请号：US11410697

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： H01J7/24

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

公开(公告)号：US20070245960A1

公开(公告)日：2007-10-25

申请号：US11410773

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23C16/00

CPC分类号： H01J37/32137 ,  H01J37/32091 ,  H01J37/321

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the chamber at a level that provides the desired plasma ion density. Chemical species distribution or content in the process region plasma is controlled by adjusting the ratio between the amounts of the capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method further includes applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入室中，将VHF等离子体源功率电容耦合到层叠在晶片上的室的处理区域，同时将RF等离子体源功率感应耦合到工艺区域 。 通过将等离子体源功率的总量以感应和电容耦合到腔室中的水平提供期望的等离子体离子密度来建立特定的等离子体离子密度水平。 通过调节电容耦合功率和电感耦合功率之间的比例来控制处理区域等离子体中的化学物质分布或含量，同时继续保持总等离子体源功率的水平。 该方法还包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处的离子能量的平均值和总体分布。

公开(公告)号：US20070246443A1

公开(公告)日：2007-10-25

申请号：US11410827

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00

CPC分类号： H01J37/32935 ,  H01J37/32082 ,  H01L21/32138

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and adjusting the extent of dissociation of species in the plasma by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power. The method may further include controlling plasma ion density in the chamber by controlling the total amount of plasma source power capacitively and inductively coupled into the process region.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入过程区域，并且通过调节电容耦合VHF功率和感应耦合功率之间的比率来调节物质在等离子体中的解离程度。 该方法还可以包括通过控制电容性和电感耦合到处理区域中的等离子体源功率的总量来控制腔室中的等离子体离子密度。

公开(公告)号：US20070246163A1

公开(公告)日：2007-10-25

申请号：US11410784

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/5096 ,  C23C16/458 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, an inductively coupled plasma source power applicator overlying the ceiling, and an RF power generator coupled to the inductively coupled source power applicator, and a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and a VHF power generator coupled to the capacitively coupled source power applicator. The reactor further includes a plasma bias power applicator comprising a bias power electrode in the workpiece support and at least a first RF bias power generator coupled to the plasma bias power applicator, process gas distribution apparatus comprising a gas distribution showerhead in the ceiling, a vacuum pump for evacuating the chamber, and a first controller capable of adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator and the capacitively coupled plasma source power applicator.

摘要翻译： 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，覆盖天花板的电感耦合等离子体源功率施加器，以及耦合到感应耦合的RF功率发生器 源电源施加器和电容耦合的等离子体源功率施加器，其包括源功率电极，其以下之一：（a）天花板（b）工件支撑件以及耦合到电容耦合的源功率施加器的VHF发电机。 反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的至少第一RF偏置功率发生器，处理气体分配装置包括天花板中的气体分配喷头，真空 泵，以及第一控制器，其能够通过电感耦合等离子体源功率施加器和电容耦合等离子体源功率施加器来调节同时耦合到腔室中的等离子体的功率的相对量。

公开(公告)号：US20070246162A1

公开(公告)日：2007-10-25

申请号：US11410864

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, an inductively coupled plasma source power applicator overlying the ceiling, and an RF power generator coupled to the inductively coupled source power applicator, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator including a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

摘要翻译： 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，覆盖天花板的电感耦合等离子体源功率施加器，以及耦合到感应耦合的RF功率发生器 源电源施加器，电容耦合等离子体源功率施加器，其包括源功率电极，其以下之一：（a）天花板（b）工件支撑件以及耦合到电容耦合的源电力施加器的不同固定频率的多个VHF发电机， 以及控制器，用于独立地控制多个VHF发生器的功率输出电平，以便控制施加到源极功率电极的有效VHF频率。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

公开(公告)号：US20070246161A1

公开(公告)日：2007-10-25

申请号：US11410863

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32706

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a toroidal plasma source comprising a hollow reentrant conduit external of the chamber and having a pair of ends connected to the interior of the chamber and forming a closed toroidal path extending through the conduit and across the diameter of the workpiece support, and an RF power applicator adjacent a portion of the reentrant external conduit, and an RF source power generator coupled to the RF power applicator of the toroidal plasma source. The reactor further includes a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode.

摘要翻译： 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，环形等离子体源，其包括腔室外部的空心折返导管，并且具有连接到 腔室的内部并且形成延伸穿过导管并跨越工件支撑件的直径的封闭的环形路径，以及邻近可折入的外部导管的一部分的RF功率施加器，以及耦合到RF功率施加器的RF源功率发生器 的环形等离子体源。 反应器还包括电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板（b）工件支架，以及耦合到电容耦合源功率施加器的不同固定频率的多个VHF发电机， 以及控制器，用于独立地控制多个VHF发生器的功率输出电平，以便控制施加到源极功率电极的有效VHF频率。

公开(公告)号：US20070245959A1

公开(公告)日：2007-10-25

申请号：US11410717

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J37/32165

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入工艺区域，并通过控制VHF源功率的有效频率来控制等离子体离子密度。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US20070245958A1

公开(公告)日：2007-10-25

申请号：US11410698

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23C16/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling radial distribution of plasma ion density in the process region by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入过程区域，并且通过控制VHF源功率的有效频率来控制处理区域中的等离子体离子密度的径向分布。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US09275887B2

公开(公告)日：2016-03-01

申请号：US11778019

申请日：2007-07-14

申请人： Alexander Matyushkin ,  Dan Katz ,  John Holland ,  Theodoros Panagopoulos ,  Michael D. Willwerth

发明人： Alexander Matyushkin ,  Dan Katz ,  John Holland ,  Theodoros Panagopoulos ,  Michael D. Willwerth

IPC分类号： B05C11/00 ,  H01L21/683 ,  H01L21/67 ,  B05C13/00

CPC分类号： H05B3/0047 ,  B05C13/00 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

摘要： A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

摘要翻译： 基板处理室包括静电卡盘，该静电卡盘包括具有基板接收表面和相对的背面的陶瓷盘。 在一个版本中，陶瓷盘包括小于7mm的厚度。 电极嵌入陶瓷盘中以产生静电力来保持基板，并且陶瓷盘中的加热器线圈允许独立地控制在不同加热区域的温度。 冷却器为陶瓷盘下方的底座中的冷却剂通道提供冷却剂。 控制器包括温度控制指令集，其将冷却器内的冷却剂温度设定为在施加到加热器的功率水平上升或下降之前。