TOUCH SUBSTRATE AND TOUCH DISPLAY DEVICE
    25.
    发明公开

    公开(公告)号:US20230400950A1

    公开(公告)日:2023-12-14

    申请号:US18032791

    申请日:2020-11-19

    CPC classification number: G06F3/0445 G06F3/0412 G06F2203/04112

    Abstract: A touch substrate (01) and a touch display device. The touch substrate (01) includes: a base substrate (101); a plurality of first touch electrodes (102) located on the base substrate (101); a plurality of second touch electrodes (103) located on a side, facing away from the base substrate (101), of a layer where the first touch electrodes (102) are located and insulated from the first touch electrodes (102); and a plurality of floating electrodes (104) insulated from the plurality of first touch electrodes (102) and the plurality of second touch electrodes (103), and arranged on the same layer as at least one of the first touch electrodes (102) or the second touch electrodes (103). Each floating electrode (104) has a grid shape, and at least part of the floating electrodes (104) is disconnected at at least part of dots.

    DRIVING BACKPLANE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE

    公开(公告)号:US20220068980A1

    公开(公告)日:2022-03-03

    申请号:US17213939

    申请日:2021-03-26

    Abstract: Provided are a driving backplane and a method for manufacturing the same, a display device. The method includes: forming a first conductive pattern including signal lines; forming an insulating layer having via holes; forming a second conductive pattern including pairs of coupling electrodes; sequentially forming an inorganic material layer and an organic material layer; performing step exposure and developing on the organic material layer to form an intermediate pattern including a hollow-out portion, a completely-reserved portion and a half-reserved portion; the completely-reserved portion is thicker than the half-reserved portion, a thickness of the half-reserved portion is x times that of the inorganic material layer; etching the inorganic material layer and the intermediate pattern until a part of the inorganic material layer, corresponding to the hollow-out portion, is removed; an etching selection ratio of the inorganic material layer to the intermediate pattern is 1:y, 0

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