公开(公告)号：US20090114927A1

公开(公告)日：2009-05-07

申请号：US12081277

申请日：2008-04-14

申请人： Soo-haeng Cho ,  Kyoung-ho Ha ,  Han-youl Ryu ,  Sung-dong Suh ,  Seong-gu Kim ,  Bok-ki Min

发明人： Soo-haeng Cho ,  Kyoung-ho Ha ,  Han-youl Ryu ,  Sung-dong Suh ,  Seong-gu Kim ,  Bok-ki Min

IPC分类号： H01L31/173

CPC分类号： G02B6/43 ,  H01L2224/05554 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00

摘要： A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device

摘要翻译： 提供具有光互连单元的多芯片。 具有光学互连单元的多芯片包括顺序层叠的多个硅芯片，多个硅芯片中的每一个的一侧的多个光学器件阵列，使得光学器件阵列彼此对应，并且布线电连接 连接硅芯片和安装在硅芯片一侧的光学器件阵列，其中相应的光学器件阵列通过在不同层中的相应的光学器件阵列之间发送和接收光学信号来形成光学连接单元。 每个光学器件阵列包括发光器件和光接收器件中的至少一个

公开(公告)号：US08004000B2

公开(公告)日：2011-08-23

申请号：US11797003

申请日：2007-04-30

申请人： Bok-ki Min ,  Cheol-soo Sone

发明人： Bok-ki Min ,  Cheol-soo Sone

IPC分类号： H01L33/00

CPC分类号： H01L33/44

摘要： Example embodiments are directed to a polarized light emitting diode and method of forming the same. The polarized light emitting diode may include a support layer, a semiconductor layer structure, and/or a polarization control layer. The semiconductor layer structure may be formed on the support layer and may include a light-emitting layer. The polarization control layer may be formed on the semiconductor layer structure and may include a plurality of metal nanowires. The polarized light emitting diode may be configured to control the polarization of emitted light. The method of forming a polarized light emitting diode may include forming on a substrate a semiconductor layer structure with a light emitting layer. A reflecting layer may be formed on the semiconductor layer structure with an attached support layer. The substrate may be removed from the semiconductor layer structure and a polarization control layer including metal nanowires may be formed on the semiconductor layer structure.

摘要翻译： 示例性实施例涉及一种偏振发光二极管及其形成方法。 偏振发光二极管可以包括支撑层，半导体层结构和/或偏振控制层。 半导体层结构可以形成在支撑层上，并且可以包括发光层。 偏光控制层可以形成在半导体层结构上，并且可以包括多个金属纳米线。 偏振发光二极管可以被配置为控制发射光的偏振。 形成偏振发光二极管的方法可以包括在衬底上形成具有发光层的半导体层结构。 可以在具有附接的支撑层的半导体层结构上形成反射层。 可以从半导体层结构去除衬底，并且可以在半导体层结构上形成包括金属纳米线的偏振控制层。

公开(公告)号：US20090136235A1

公开(公告)日：2009-05-28

申请号：US12149721

申请日：2008-05-07

申请人： Sung-dong Suh ,  Kyoung-ho Ha ,  Seong-gu Kim ,  Soo-haeng Cho ,  Bok-ki Min ,  Han-youl Ryu

发明人： Sung-dong Suh ,  Kyoung-ho Ha ,  Seong-gu Kim ,  Soo-haeng Cho ,  Bok-ki Min ,  Han-youl Ryu

IPC分类号： H04B10/00 ,  G01R31/28

CPC分类号： G11C29/56 ,  G01R31/2889 ,  G01R31/31905 ,  G11C2029/5602

摘要： Example embodiments provide a probe card having an optical transmitting unit and a memory tester having the probe card. The probe card may include a plurality of needles connected to test terminals formed in a memory, a plurality of first terminals connected to the needles, a plurality of second terminals connected to the outside and corresponding to the first terminals, and an optical transmitting unit. The optical transmitting unit may connect the first terminals and the second terminals.

摘要翻译： 示例性实施例提供了具有光发送单元和具有探针卡的存储器测试器的探针卡。 探针卡可以包括连接到形成在存储器中的测试端子的多个针，连接到针的多个第一端子，连接到外部并对应于第一端子的多个第二端子和光学传输单元。 光发送单元可以连接第一端子和第二端子。

公开(公告)号：US08154640B2

公开(公告)日：2012-04-10

申请号：US12230363

申请日：2008-08-28

申请人： Dae-kil Cha ,  Bok-ki Min ,  Young-gu Jin ,  Won-joo Kim ,  Seung-hoon Lee ,  Yoon-dong Park

发明人： Dae-kil Cha ,  Bok-ki Min ,  Young-gu Jin ,  Won-joo Kim ,  Seung-hoon Lee ,  Yoon-dong Park

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14679 ,  H01L27/14609 ,  H04N5/335 ,  H04N5/3355

摘要： An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.

摘要翻译： 图像传感器包括排列成阵列的多个单位像素。 每个单位像素包括被配置为被具有相同波长的光照射的多个子像素。 每个子像素包括多个浮体晶体管。 每个浮体晶体管包括源极区域，漏极区域，源极区域和漏极区域之间的浮体区域以及形成在浮动体区域上的栅极电极。

公开(公告)号：US08143685B2

公开(公告)日：2012-03-27

申请号：US12508079

申请日：2009-07-23

申请人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

发明人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

IPC分类号： H01L31/0232

CPC分类号： H01L27/14643 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/14625

摘要： An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

摘要翻译： 图像传感器包括排列成阵列的多个像素，每个像素包括第一区域和第二区域，第一区域和第二区域在半导体层中彼此分离，并且掺杂有彼此不同电导率的杂质 形成在第一和第二区域之间的光电转换区域和将入射光聚焦到光电转换区域上的至少一个金属纳米点。