公开(公告)号：US20080165502A1

公开(公告)日：2008-07-10

申请号：US11619928

申请日：2007-01-04

申请人： Bruce K. Furman ,  Sushumna Iruvanti ,  Paul A. Lauro ,  Yves C. Martin ,  Da Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

发明人： Bruce K. Furman ,  Sushumna Iruvanti ,  Paul A. Lauro ,  Yves C. Martin ,  Da Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

IPC分类号： H05K7/20 ,  B23P15/26

CPC分类号： H01L23/433 ,  F28F13/00 ,  F28F2013/005 ,  H01L2224/73253 ,  Y10T29/4935 ,  Y10T29/53113

摘要： The present invention is a patterned metal thermal interface. In one embodiment a system for dissipating heat from a heat-generating device includes a heat sink having a first surface adapted for thermal coupling to a first surface of the heat generating device and a thermal interface having at least one patterned surface, the thermal interface being adapted to thermally couple the first surface of the heat sink to the first surface of the heat generating device. The patterned surface of the thermal interface allows the thermal interface to deform under compression between the heat sink and the heat generating device, leading to better conformity of the thermal interface to the surfaces of the heat sink and the heat generating device.

摘要翻译： 本发明是图案化的金属热界面。 在一个实施例中，用于从发热装置散热的系统包括具有适于热耦合到发热装置的第一表面的第一表面的散热器和具有至少一个图案化表面的热界面，所述热界面是 适于将散热器的第一表面热耦合到发热装置的第一表面。 热界面的图案化表面允许热界面在散热器和发热装置之间的压缩下变形，导致热界面与散热器和发热装置的表面更好地一致。

公开(公告)号：US09082762B2

公开(公告)日：2015-07-14

申请号：US12647999

申请日：2009-12-28

申请人： Sung K. Kang ,  Paul A. Lauro ,  Minhua Lu ,  Da-Yuan Shih

发明人： Sung K. Kang ,  Paul A. Lauro ,  Minhua Lu ,  Da-Yuan Shih

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05655 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/16503 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0109 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/01026 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A process comprises manufacturing an electromigration-resistant under-bump metallization (UBM) flip chip structure comprising a Cu layer by applying to the Cu layer a metallic reaction barrier layer comprising NiFe. The solder employed in the flip chip structure comprise substantially lead-free tin. A structure comprises a product produced by this process. In another embodiment a process comprises manufacturing an electromigration-resistant UBM Sn-rich Pb-free solder bump flip chip structure wherein the electromigration-resistant UBM structure comprises a four-layer structure, or a three-layer structure, wherein the four layer structure is formed by providing 1) an adhesion layer, 2) a Cu seed layer for plating, 3) a reaction barrier layer, and 4) a wettable layer for joining to the solder, and the three-layer structure is formed by providing 1) an adhesion layer, 2) a reaction barrier layer, and 3) a wettable layer. In a further embodiment, the reaction barrier layer comprises metals selected from Ni, Fe, Pd, Pt, Co, Cu and their alloys, and combinations thereof. A structure comprises a product produced by the immediately foregoing process.

摘要翻译： 一种方法包括通过向Cu层施加包含NiFe的金属反应阻挡层来制造包含Cu层的电迁移性凸块下金属化（UBM）倒装芯片结构。 在倒装芯片结构中使用的焊料基本上包括无铅锡。 一种结构包括通过该方法生产的产品。 在另一个实施方案中，一种方法包括制造抗电镀UBM Sn的无铅焊料凸块倒装芯片结构，其中电迁移阻挡UBM结构包括四层结构或三层结构，其中四层结构是 通过提供1）粘合层形成，2）用于电镀的Cu籽晶层，3）反应阻挡层，以及4）用于与焊料接合的可湿性层，并且通过提供1）一种 粘合层，2）反应阻挡层，和3）可湿性层。 在另一个实施方案中，反应阻挡层包含选自Ni，Fe，Pd，Pt，Co，Cu及其合金的金属及其组合。 一种结构包括由上述方法生产的产品。

公开(公告)号：US08314500B2

公开(公告)日：2012-11-20

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US08003512B2

公开(公告)日：2011-08-23

申请号：US12364684

申请日：2009-02-03

申请人： Luc L. Belanger ,  Marc A. Bergendahl ,  Ajay P. Giri ,  Paul A. Lauro ,  Valerie A. Oberson ,  Da-Yuan Shih

发明人： Luc L. Belanger ,  Marc A. Bergendahl ,  Ajay P. Giri ,  Paul A. Lauro ,  Valerie A. Oberson ,  Da-Yuan Shih

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/12 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01028 ,  H01L2924/04941

摘要： Methods and UBM structures having bilayer or trilayer UBM layers that include a thin TiW adhesion layer and a thick Ni-based barrier layer thereover both deposited under sputtering operating conditions that provide the resultant bilayer or trilayer UBM layers with minimal composite stresses. The Ni-based barrier layer may be pure Ni or a Ni alloy. These UBM layers may be patterned to fabricate bilayer or trilayer UBM capture pads, followed by joining a lead-free solder thereto for providing lead-free solder joints that maintain reliability after multiple reflows. Optionally, the top layer of the trilayer UBM structures may include soluble or insoluble metals for doping the lead-free solder connections.

摘要翻译： 具有双层或三层UBM层的方法和UBM结构，其在包括薄TiW粘附层和厚Ni基阻挡层的两个或三层UBM层上沉积在溅射操作条件下，以最小的复合应力提供所得到的双层或三层UBM层。 Ni基阻挡层可以是纯Ni或Ni合金。 这些UBM层可以被图案化以制造双层或三层UBM捕获垫，随后将无铅焊料接合到其上以提供在多次回流之后保持可靠性的无铅焊点。 任选地，三层UBM结构的顶层可以包括用于掺杂无铅焊料连接的可溶性或不溶性金属。

公开(公告)号：US07898076B2

公开(公告)日：2011-03-01

申请号：US11742161

申请日：2007-04-30

申请人： Bruce Furman ,  Madhusudan K. Iyengar ,  Paul A. Lauro ,  Yves Martin ,  Roger R. Schmidt ,  Da-Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

发明人： Bruce Furman ,  Madhusudan K. Iyengar ,  Paul A. Lauro ,  Yves Martin ,  Roger R. Schmidt ,  Da-Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

IPC分类号： H01L23/10

CPC分类号： H01L23/42 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2224/0401

摘要： Assemblies for dissipating heat from integrated circuits and circuit chips are disclosed. The assemblies include a low melt solder as a thermal interface material (TIM) for the transfer of heat from a chip to a heat sink (HS), wherein the low melt solder has a melting point below the maximum operating temperature of the chip. Methods for making the assemblies are also disclosed.

摘要翻译： 公开了用于从集成电路和电路芯片散热的组件。 组件包括作为用于将热从芯片传递到散热器（HS）的热界面材料（TIM）的低熔点焊料，其中低熔点焊料的熔点低于芯片的最大工作温度。 还公开了制造组件的方法。

公开(公告)号：US07731079B2

公开(公告)日：2010-06-08

申请号：US12143289

申请日：2008-06-20

申请人： Levi A. Campbell ,  Richard C. Chu ,  Michael J. Ellsworth, Jr. ,  Bruce K. Furman ,  Madhusudan K. Iyengar ,  Paul A. Lauro ,  Roger R. Schmidt ,  Da-Yuan Shih ,  Robert E. Simons

发明人： Levi A. Campbell ,  Richard C. Chu ,  Michael J. Ellsworth, Jr. ,  Bruce K. Furman ,  Madhusudan K. Iyengar ,  Paul A. Lauro ,  Roger R. Schmidt ,  Da-Yuan Shih ,  Robert E. Simons

IPC分类号： B23K31/02

CPC分类号： H01L23/4735 ,  H01L23/473 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： A cooling apparatus and method of fabrication are provided for facilitating removal of heat from a heat-generating electronic device. The method of fabrication includes: obtaining a solder material; disposing the solder material on a surface to be cooled; and reflowing and shaping the solder material disposed on the surface to be cooled to configure the solder material as a base with a plurality of fins extending therefrom. In addition to being in situ-configured on the surface to be cooled, the base is simultaneously metallurgically bonded to the surface to be cooled. The solder material, configured as the base with a plurality of fins extending therefrom, is a single, monolithic structure thermally attached to the surface to be cooled via the metallurgical bonding thereof to the surface to be cooled.

摘要翻译： 提供冷却装置和制造方法以便于从发热电子装置中除去热量。 制造方法包括：获得焊料材料; 将焊料材料设置在要冷却的表面上; 回流和成形设置在待冷却表面上的焊料材料，以将焊料材料构成为具有从其延伸的多个翅片的基底。 除了在待冷却的表面上原位配置，基底同时冶金结合到待冷却的表面上。 构造为具有从其延伸的多个翅片的基底的焊料材料是通过其被冶金结合到要冷却的表面热连接到要冷却的表面的单个整体结构。

公开(公告)号：US20080265404A1

公开(公告)日：2008-10-30

申请号：US11742161

申请日：2007-04-30

申请人： Bruce Furman ,  Madhusudan K. Iyengar ,  Paul A. Lauro ,  Yves Martin ,  Roger R. Schmidt ,  Da-Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

发明人： Bruce Furman ,  Madhusudan K. Iyengar ,  Paul A. Lauro ,  Yves Martin ,  Roger R. Schmidt ,  Da-Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

IPC分类号： H01L23/34 ,  H01L21/00

CPC分类号： H01L23/42 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2224/0401

摘要： Assemblies for dissipating heat from integrated circuits and circuit chips are disclosed. The assemblies include a low melt solder as a thermal interface material (TIM) for the transfer of heat from a chip to a heat sink (HS), wherein the low melt solder has a melting point below the maximum operating temperature of the chip. Methods for making the assemblies are also disclosed.

摘要翻译： 公开了用于从集成电路和电路芯片散热的组件。 组件包括作为用于将热从芯片传递到散热器（HS）的热界面材料（TIM）的低熔点焊料，其中低熔点焊料的熔点低于芯片的最大工作温度。 还公开了制造组件的方法。

公开(公告)号：US20080157395A1

公开(公告)日：2008-07-03

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20100311250A1

公开(公告)日：2010-12-09

申请号：US12784688

申请日：2010-05-21

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra Sadana

IPC分类号： H01L21/30

CPC分类号： H01L31/0304 ,  H01L21/20 ,  H01L21/76254 ,  H01L31/03762 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/075 ,  H01L31/076 ,  H01L31/184 ,  H01L31/1892 ,  H01L31/20 ,  Y02E10/548

摘要： A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. In one embodiment the stress layer comprises a flexible material.

摘要翻译： 一种制造薄膜直接带隙半导体活性太阳能电池器件的方法，包括提供具有表面的源极衬底，并且在表面上设置应力层，该应力层具有与源极衬底的表面接触并且结合到源极衬底的表面。 将手柄箔与应力层操作地相关联并且向手柄箔施加力将应力层与源衬底分离，并将源衬底的一部分留在应力层表面上，基本上对应于与表面相接触的区域 源底物。 该部分的厚度不如源层厚。 应力层厚度低于导致源底材自发剥落的厚度。 源极衬底可以包括无机单晶或多晶材料，例如Si，Ge，GaAs，SiC，蓝宝石或GaN。 在一个实施例中，应力层包括柔性材料。

公开(公告)号：US08916450B2

公开(公告)日：2014-12-23

申请号：US13565378

申请日：2012-08-02

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ibrahim Alhomoudi

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/00

CPC分类号： H01L21/304 ,  B26F3/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/321 ,  H01L31/1892 ,  Y02E10/50 ,  Y10T225/10

摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.

摘要翻译： 利用剥落的材料层从基底基板上去除材料层的方法，其中在剥离期间模式III应力即垂直于在基底基板中产生的断裂面的应力减小。 在剥落过程中模式III应力的显着降低导致剥落过程，其中剥离材料在其一个边缘处具有较小的表面粗糙度，与现有技术的剥离过程相比，其中存在模式III应力并与剥落相竞争。