公开(公告)号：US06448648B1

公开(公告)日：2002-09-10

申请号：US08826110

申请日：1997-03-27

申请人： John Bradley Boos

发明人： John Bradley Boos

IPC分类号： H01L2348

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L29/207 ,  H01L29/7785

摘要： An electronic semiconductor device comprising a semiconductor base deposited on a semiconductor substrate by means of molecular beam epitaxy and source, drain and gate disposed on the base in a spaced relationghip to each other, the source and the drain comprising Pd/barrier/Au layers with the palladium layer being in contact with the device. The device is fabricated conventionally except the heat treating is at above about 170° C. for ¼-10 hours sufficient for the palladium layer to react with the base yielding reduced contact and access resistances and a narrower spacing between source and drain.

摘要翻译： 一种电子半导体器件，包括通过分子束外延沉积在半导体衬底上的半导体基底，并且以彼此间隔开的关系设置在基底上的源极，漏极和栅极，源极和漏极包括Pd /势垒/ Au层， 钯层与装置接触。 除了热处理高于约170℃，装置是常规制造的，足以使钯层与基底反应达1/4小时，从而产生降低的接触和进入电阻以及源极和漏极之间的较窄的间隔。