公开(公告)号：US20070185901A1

公开(公告)日：2007-08-09

申请号：US11734528

申请日：2007-04-12

申请人： Stephen Gates

发明人： Stephen Gates

IPC分类号： G06F7/00

CPC分类号： G06F17/3071 ,  Y10S707/99935 ,  Y10S707/99943

摘要： Methods, apparatus and systems are provided to generate from a set of training documents a set of training data and a set of features for a taxonomy of categories. In this generated taxonomy the degree of feature overlap among categories is minimized in order to optimize use with a machine-based categorizer. However, the categories still make sense to a human because a human makes the decisions regarding category definitions. In an example embodiment, for each category, a plurality of training documents selected using Web search engines is generated, the documents winnowed to produce a more refined set of training documents, and a set of features highly differentiating for that category within a set of categories (a supercategory) extracted. This set of training documents or differentiating features is used as input to a categorizer, which determines for a plurality of test documents the plurality of categories to which they best belong.

摘要翻译： 提供方法，装置和系统以从一组训练文件中产生一组训练数据和用于分类分类的一组特征。 在这个生成的分类法中，最小化类别之间的特征重叠程度，以优化与基于机器的分类器的使用。 然而，类别对人类来说仍然是有意义的，因为人类对类别定义做出决定。 在一个示例性实施例中，对于每个类别，生成使用Web搜索引擎选择的多个训练文档，该文档被确定为产生更精细的一组训练文档，以及一组在一组类别内对该类别进行高度区分的特征 （超级类别）提取。 该组训练文档或区分特征被用作分类器的输入，分类器确定多个测试文档最佳属性的多个类别。

公开(公告)号：US20060007306A1

公开(公告)日：2006-01-12

申请号：US11222581

申请日：2005-09-09

申请人： Michael Masters ,  Alex Louie ,  Lily Tsong-Chou Knowles ,  Stephen Gates

发明人： Michael Masters ,  Alex Louie ,  Lily Tsong-Chou Knowles ,  Stephen Gates

IPC分类号： H04N7/00

CPC分类号： H04B1/202 ,  G08C17/00 ,  G08C2201/50 ,  G08C2201/92

摘要： A system and method for setting up a user interface of a remote control. The remote control displays a logical group of function keys the activation of which will cause the remote control to transmit a command to a target device and a plurality of indicators representative of devices. A user input functions to select one of the plurality of indicators and the device represented by the selected indicator is assigned as the target device for the logical group of function keys.

公开(公告)号：US20050276930A1

公开(公告)日：2005-12-15

申请号：US10390801

申请日：2003-03-18

申请人： Stephen Gates ,  Alfred Grill

发明人： Stephen Gates ,  Alfred Grill

IPC分类号： C09C1/00 ,  H01L21/312 ,  H01L21/316 ,  C23C16/24

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/249953 ,  Y10T428/249978 ,  H01L2924/00

摘要： The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation. Electronic structures including the multiphase, ultra low k film are also disclosed.

摘要翻译： 本发明提供了一种多相超低k膜，其具有改进的弹性模量和硬度以及其形成方法。 多相超低k电介质膜包括Si，C，O和H的原子，介电常数约为2.4或更小，纳米孔或空隙，弹性模量约5或更大，硬度约为0.7或更大 。 优选的多相超低k电介质膜包括Si，C，O和H的原子，具有约2.2或更小的介电常数，纳米孔或空隙，约3或更大的弹性模量和约0.3的硬度或 更大 多相超低k膜通过等离子体增强化学气相沉积制备，其中使用以下替代物之一：至少一种包含含有至少三个Si-O键的硅氧烷分子的前体气体; 或包含对电子束辐射敏感的含有反应性基团的分子的至少一种前体气体。 还公开了包括多相超低k膜的电子结构。

公开(公告)号：US20050266681A1

公开(公告)日：2005-12-01

申请号：US11182445

申请日：2005-07-15

申请人： Timothy Dalton ,  Stephen Gates

发明人： Timothy Dalton ,  Stephen Gates

IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/02063 ,  H01L21/76814

摘要： A method of fabricating BEOL interconnect structures on a semiconductor device having a plurality of via contacts with low via contact resistance is provided. The method includes the steps of: a) forming a porous or dense low k dielectric layer on a substrate; b) forming single or dual damascene etched openings in the low k dielectric; c) placing the substrate in a process chamber on a cold chuck at a temperature about −200° C. to about 25° C.; d) adding to the process chamber a condensable cleaning agent (CCA) to condense a layer of CCA within the etched openings on the substrate; and e) performing an activation step while the wafer remains cold at a temperature of about −200° C. to about 25° C. The via contacts are very stable during thermal cycles and during operation of the semiconductor device.

摘要翻译： 提供了在具有多个通孔接触电阻低的半导体器件上制造BEOL互连结构的方法。 该方法包括以下步骤：a）在衬底上形成多孔或致密的低k电介质层; b）在低k电介质中形成单个或双镶嵌蚀刻开口; c）将基板放置在约-200℃至约25℃的温度下的冷卡盘上的处理室中; d）向处理室中加入可冷凝清洁剂（CCA），以在衬底上的蚀刻开口内冷凝CCA层; 以及e）当晶片在约-200℃至约25℃的温度下保持冷时，执行激活步骤。在热循环期间和在半导体器件的操作期间，通孔触点是非常稳定的。

公开(公告)号：US20050245096A1

公开(公告)日：2005-11-03

申请号：US10838849

申请日：2004-05-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US20050206004A1

公开(公告)日：2005-09-22

申请号：US11128493

申请日：2005-05-13

申请人： Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

发明人： Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

IPC分类号： H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC分类号： H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

摘要： The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦x≦0.9, 0≦y≦0.7, 0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1

公开(公告)号：US20050186778A1

公开(公告)日：2005-08-25

申请号：US11104764

申请日：2005-04-12

申请人： Donald Canaperi ,  Timothy Dalton ,  Stephen Gates ,  Mahadevaiyer Krishnan ,  Satya Nitta ,  Sampath Purushothaman ,  Sean Smith

发明人： Donald Canaperi ,  Timothy Dalton ,  Stephen Gates ,  Mahadevaiyer Krishnan ,  Satya Nitta ,  Sampath Purushothaman ,  Sean Smith

IPC分类号： H01L21/768 ,  H01L21/00 ,  H01L21/4763

CPC分类号： H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76885 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less-robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.

摘要翻译： 一个结构包含非常低的介电常数（k）绝缘体与铜布线，以实现高性能互连。 布线由相对耐用的低k电介质（例如SiLk或SiO 2）支撑，并且在该结构的其余部分中布置非常低的k和较不稳定的间隙填充电介质，使得该结构将耐用层与强度非常相似 低k电介质用于互连电气性能。

公开(公告)号：US20050008959A1

公开(公告)日：2005-01-13

申请号：US10915087

申请日：2004-08-10

申请人： Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

发明人： Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

IPC分类号： G03G13/06 ,  H01L20060101 ,  H01L21/00 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L23/48 ,  H05B6/64

CPC分类号： H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/316 ,  Y10S430/146 ,  Y10T428/31663

摘要： The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNwCxOyHz where 0.1≦v≦0.9, 0≦w≦0.5, 0.05≦x≦0.9, 0≦y≦0.5, 0.05≦z≦0.8 for v+w+x+y+z=1; forming a patterned photoresist atop the ceramic layer; patterning the ceramic layer to expose regions of the underlying substrate, where a remaining region of the underlying substrate is protected by the patterned ceramic layer; and etching the exposed region of the underlying substrate. Another aspect of the present invention is a buried etch stop layer having a composition of SivNwCxOyHz where 0.05

摘要翻译： 本发明包括一种用于形成硬掩模的方法，包括以下步骤：在基底顶上沉积聚合物预陶瓷前体膜; 将聚合物前陶瓷前体膜转化为至少一个陶瓷层，其中陶瓷层具有SivNwCxOyHh的组成，其中0.1≤v≤0.9,0≤w≤0.5,0.05≤x≤0.9,0≤ 对于v + w + x + y + z = 1，y <= 0.5,0.05 <= z <= 0.8; 在陶瓷层顶部形成图案化的光刻胶; 图案化陶瓷层以暴露下面的衬底的区域，其中下面的衬底的剩余区域被图案化的陶瓷层保护; 并蚀刻下面的衬底的暴露区域。 本发明的另一方面是具有SivNwCxOyHz组成的掩埋蚀刻停止层，其中0.05≤v≤0.8,0

公开(公告)号：US07607907B2

公开(公告)日：2009-10-27

申请号：US10940546

申请日：2004-09-14

申请人： Adrian Comillus Shorten ,  Christopher J. McCrindle ,  Brian Eric Knell ,  Stephen Gates

发明人： Adrian Comillus Shorten ,  Christopher J. McCrindle ,  Brian Eric Knell ,  Stephen Gates

IPC分类号： F04C2/344

CPC分类号： F01C21/0827 ,  F04C2/3445

摘要： A roller vane pump for fluid includes a carrier which is rotatable in a housing about an axis of rotation, the carrier carrying a plurality of roller vanes which are each received in a respective slot which extends inwardly of a periphery of the carrier and permits the roller to move inwardly and outwardly in use, the housing surrounding the carrier, pumping chambers being formed between the rollers, the carrier and the housing, the rollers engaging with the housing and moving inwardly and outwardly of their respective slots as the carrier rotates, in response to the configuration of the housing so that the pumping chambers change in volume as the carrier rotates, to effect pumping of the fluid, from an inlet to an outlet of the pump, and wherein in each of the slots in which the rollers are received, there is provided a restrictor element which restricts movement of the roller inwardly of its respective slot.

摘要翻译： 用于流体的滚子叶片泵包括可围绕旋转轴线在壳体中旋转的载体，所述载体承载多个辊叶片，每个叶片各自容纳在相对于所述载体周边的内侧延伸的槽中，并允许所述滚筒 在使用中向内和向外移动，围绕载体的壳体，在辊，载体和壳体之间形成的泵送室，当载体旋转时，滚子与壳体接合并向其内侧和外侧移动，作为响应 关于壳体的构造，使得当载体旋转时，泵送室的体积变化，以实现从泵的入口到出口的流体的泵送，并且其中在每个容纳辊的槽中， 提供了一种限制器，其限制了其相应槽的内部的运动。

公开(公告)号：US20080026203A1

公开(公告)日：2008-01-31

申请号：US11870263

申请日：2007-10-10

申请人： Stephen Gates ,  Alfred Grill

发明人： Stephen Gates ,  Alfred Grill

IPC分类号： B32B3/26 ,  C04B41/50

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/249953 ,  Y10T428/249978 ,  H01L2924/00

摘要： The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation. Electronic structures including the multiphase, ultra low k film are also disclosed.

摘要翻译： 本发明提供了一种多相超低k膜，其具有改进的弹性模量和硬度以及其形成方法。 多相超低k电介质膜包括Si，C，O和H的原子，介电常数约为2.4或更小，纳米孔或空隙，弹性模量约5或更大，硬度约为0.7或更大 。 优选的多相超低k电介质膜包括Si，C，O和H的原子，具有约2.2或更小的介电常数，纳米孔或空隙，约3或更大的弹性模量和约0.3的硬度或 更大 多相超低k膜通过等离子体增强化学气相沉积制备，其中使用以下替代物之一：至少一种包含含有至少三个Si-O键的硅氧烷分子的前体气体; 或包含对电子束辐射敏感的含有反应性基团的分子的至少一种前体气体。 还公开了包括多相超低k膜的电子结构。