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公开(公告)号:US20140232436A1
公开(公告)日:2014-08-21
申请号:US14259326
申请日:2014-04-23
Applicant: DENSO CORPORATION
Inventor: Atsushi KOBAYASHI , Hisashi TAKASU
IPC: H03K17/082
CPC classification number: H03K17/0822 , H03K17/08 , H03K2217/0027 , H03K2217/0045
Abstract: A power semiconductor device driving circuit includes a gate control terminal, which is provided at a position separated from a drain terminal of a power semiconductor device by a predetermined distance so that electric discharge is generated between the drain terminal and the gate control terminal at the time of generation of surge. A surge voltage is applied to the gate control terminal due to this discharge, the gate of the power semiconductor device is charged to turn on and absorb the surge energy. Thus it becomes possible to suppress the surge voltage applied to the drain terminal and prevent breakdown of the power semiconductor device.
Abstract translation: 功率半导体器件驱动电路包括栅极控制端子,栅极控制端子设置在与功率半导体器件的漏极端子分开预定距离的位置处,从而在漏极端子和栅极控制端子之间产生放电 的浪潮。 由于这种放电,浪涌电压施加到栅极控制端子,所以功率半导体器件的栅极被充电以吸收浪涌能量。 因此,可以抑制施加到漏极端子的浪涌电压并防止功率半导体器件的击穿。
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公开(公告)号:US20190181853A1
公开(公告)日:2019-06-13
申请号:US16278278
申请日:2019-02-18
Applicant: DENSO CORPORATION
Inventor: Atsushi KOBAYASHI , Takeshi MATSUZAKI
Abstract: A signal output circuit is configured to control driving of an output transistor to output a trapezoidal wave output signal from a main terminal of the output transistor. The signal output circuit includes a driver that drives the output transistor at a constant current and a drive capability changing unit that periodically changes drive capability of the driver.
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