公开(公告)号：US08778800B1

公开(公告)日：2014-07-15

申请号：US13887370

申请日：2013-05-06

申请人： David T. Chang ,  Pamela R. Patterson ,  Ping Liu

发明人： David T. Chang ,  Pamela R. Patterson ,  Ping Liu

IPC分类号： H01L21/44

CPC分类号： H01G11/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01G11/28 ,  H01G11/36 ,  H01G11/46 ,  H01G11/82 ,  H01L28/91 ,  H01L29/0676 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  Y02E60/13

摘要： This invention provides a micro-supercapacitor with high energy density and high power density. In some variations, carbon nanostructures, such as carbon nanotubes, coated with a metal oxide, such as ruthenium oxide, are grown in a supercapacitor cavity that contains no separator. A lid is bonded to the cavity using a bonding process to form a hermetic seal. These micro-supercapacitors may be fabricated from silicon-on-insulator wafers according to the disclosed methods. An exemplary micro-supercapacitor is cubic with a length of about 50-100 μm. The absence of a separator translates to higher energy storage volume and less wasted space within the supercapacitor cell. The energy density of the micro-supercapacitor may exceed 150 J/cm3 and the peak output power density may be in the range of about 2-20 W/cm3, in various embodiments.

摘要翻译： 本发明提供了具有高能量密度和高功率密度的微型超级电容器。 在一些变型中，涂覆有金属氧化物（例如氧化钌）的碳纳米管结构，例如在不含隔板的超级电容器腔中生长。 使用接合工艺将盖结合到腔体以形成气密密封。 根据所公开的方法，这些微超级电容器可以由绝缘体上硅晶片制造。 示例性的微超级电容器是长度为约50-100μm的立方体。 没有分离器可以转换为更高的能量存储容量，并且在超级电容器单元内减少浪费的空间。 在各种实施例中，微超级电容器的能量密度可以超过150J / cm 3，峰值输出功率密度可以在约2-20W / cm 3的范围内。

公开(公告)号：US08558281B1

公开(公告)日：2013-10-15

申请号：US13310473

申请日：2011-12-02

申请人： Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

发明人： Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

IPC分类号： H01L29/205

CPC分类号： H01L29/42316 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462

摘要： A method for fabricating a gate structure for a field effect transistor having a buffer layer on a substrate, a channel layer and a barrier layer over the channel layer includes forming a gate including silicon, forming first sidewalls of a first material on either side and adjacent to the gate, selectively etching into the buffer layer to form a mesa for the field effect transistor, depositing a material layer over the mesa, planarizing the material layer over the mesa to form a planarized surface such that a top of the gate, tops of the first sidewalls, and a top of the material layer over the mesa are on the same planarized surface, depositing metal on the planzarized surface, annealing to form the gate into a metal silicided gate, and etching to remove excess non-silicided metal.

摘要翻译： 一种制造用于场效应晶体管的栅极结构的方法，该场效应晶体管在衬底上具有缓冲层，沟道层上的沟道层和势垒层包括形成包含硅的栅极，在任一侧和相邻的第一侧上形成第一材料的第一侧壁 到栅极，选择性地蚀刻到缓冲层中以形成用于场效应晶体管的台面，在所述台面上沉积材料层，在所述台面上平坦化所述材料层以形成平坦化表面，使得所述栅极的顶部， 第一侧壁和台面上的材料层的顶部在相同的平坦化表面上，在平面化表面上沉积金属，退火以将栅极形成金属硅化栅极，并蚀刻以除去多余的非硅化金属。

公开(公告)号：US07851971B2

公开(公告)日：2010-12-14

申请号：US12577420

申请日：2009-10-12

申请人： David T. Chang ,  Randall L. Kubena ,  Frederic P. Stratton ,  Pamela R. Patterson

发明人： David T. Chang ,  Randall L. Kubena ,  Frederic P. Stratton ,  Pamela R. Patterson

IPC分类号： H01L41/08

CPC分类号： H04R31/00 ,  H04R19/005 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908

摘要： A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

摘要翻译： 一种用于制造低频石英谐振器的方法包括用金属蚀刻停止器将石英晶片的顶侧金属化，在金属蚀刻停止器上沉积第一金属层，图案化第一金属层以形成顶部电极，将石英 将晶片细化到硅手柄，将石英晶片细化到所需厚度，在石英晶片的底侧上沉积硬蚀刻掩模，蚀刻石英晶片以形成用于谐振器的石英区域，并通过石英形成通孔 晶片，去除硬蚀刻掩模而不去除金属蚀刻停止，在石英晶片的底侧上形成用于低频石英谐振器的底部电极，将用于衬底接合焊盘的金属沉积到主衬底晶片上，将石英谐振器 到基板接合焊盘，并且移除硅手柄。

公开(公告)号：US07750535B2

公开(公告)日：2010-07-06

申请号：US11800294

申请日：2007-05-04

申请人： Randall L. Kubena ,  David T. Chang ,  Jinsoo Kim

发明人： Randall L. Kubena ,  David T. Chang ,  Jinsoo Kim

IPC分类号： H01L41/08 ,  H03H9/215

CPC分类号： H03H9/19 ,  H03H3/04 ,  H03H2003/0414 ,  H03H2009/241 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49128 ,  Y10T29/49165

摘要： A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

摘要翻译： 公开了一种用于制造可集成在基底上的石英纳米谐振器的方法以及其它电子器件。 在该方法中，将石英基板接合到基底基板。 石英衬底被金属化，使得偏置电压被施加到谐振器，从而使得石英衬底在大于100MHz的谐振频率下谐振。 石英衬底然后可用于以等于其谐振频率的频率驱动其它电气元件。 石英衬底还包含调谐垫以调节谐振器的谐振频率。 此外，提供了一种用于精确稀薄谐振器的石英衬底的方法。 该方法允许在石英衬底同时变薄的同时监测石英衬底的厚度。

公开(公告)号：US07237315B2

公开(公告)日：2007-07-03

申请号：US10426931

申请日：2003-04-30

申请人： Randall L. Kubena ,  David T. Chang ,  Jinsoo Kim

发明人： Randall L. Kubena ,  David T. Chang ,  Jinsoo Kim

IPC分类号： H04R31/00

CPC分类号： H03H9/19 ,  H03H3/04 ,  H03H2003/0414 ,  H03H2009/241 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49128 ,  Y10T29/49165

摘要： A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

摘要翻译： 公开了一种用于制造可集成在基底上的石英纳米谐振器的方法以及其它电子器件。 在该方法中，将石英基板接合到基底基板。 石英衬底被金属化，使得偏置电压被施加到谐振器，从而使得石英衬底在大于100MHz的谐振频率下谐振。 石英衬底然后可用于以等于其谐振频率的频率驱动其它电气元件。 石英衬底还包含调谐垫以调节谐振器的谐振频率。 此外，提供了一种用于精确稀薄谐振器的石英衬底的方法。 该方法允许在石英衬底同时变薄的同时监测石英衬底的厚度。

公开(公告)号：US07202100B1

公开(公告)日：2007-04-10

申请号：US10933853

申请日：2004-09-03

申请人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

发明人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

IPC分类号： H01L21/00

CPC分类号： G01C19/5719

摘要： The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, attaching the resonator wafer to a base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer. The present invention relates further to a gyroscope containing an integrated post with on or off-chip electronics.

摘要翻译： 本发明涉及一种制造含有一体式立柱的三叶草微陀螺仪的方法，该方法包括：将后晶片连接到共振器晶片，从后晶片形成底柱，附着于谐振晶片，将谐振晶片连接到基片 其中所述底柱装配到所述基底晶片中的柱孔中，从所述谐振器晶片形成顶部柱，其中所述底部和顶部柱围绕相同的轴线对称地形成，并且将盖子晶片附接在所述基底晶片的顶部上。 本发明还涉及一种包含具有片上或片外电子器件的集成柱的陀螺仪。

公开(公告)号：US07015060B1

公开(公告)日：2006-03-21

申请号：US11008721

申请日：2004-12-08

申请人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

发明人： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

IPC分类号： H01L21/00

CPC分类号： G01C19/5719 ,  H01L21/76898

摘要： The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

摘要翻译： 本发明涉及一种制造含有一体式立柱的三叶草微陀螺的方法，其特征在于，包括：将后晶片连接到谐振晶片，从后晶片形成底柱，附着于谐振晶片，制备带晶圆的基晶片 互连，将谐振器晶片连接到基底晶片，其中底部支架装配到基底晶片中的柱孔中，从谐振器晶片形成顶部柱，其中底部和顶部柱围绕相同的轴线对称地形成，并且附接 在基底晶片顶部的盖子晶片。

公开(公告)号：US06835587B2

公开(公告)日：2004-12-28

申请号：US10639289

申请日：2003-08-11

申请人： Randall L. Kubena ,  David T. Chang

发明人： Randall L. Kubena ,  David T. Chang

IPC分类号： H01L2100

CPC分类号： B81C3/002 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/058 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842 ,  H01H1/0036 ,  H01H59/0009

摘要： A first axis MEM tunneling/capacitive sensor and method of making same. Cantilever beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arrange sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer.

摘要翻译： 第一轴MEM隧道/电容传感器及其制造方法。 至少两个正交布置的传感器和相关联的配合结构的悬臂梁结构被限定在第一基板或晶片上，所述至少两个正交布置的传感器具有传感器灵敏度的正交方向。 还限定了至少第三传感器的谐振器结构，第三传感器在正交于两个正交布置的传感器的传感器灵敏度的正交方向的第三方向和在其上具有匹配结构的谐振器结构的灵敏度。 至少两个正交布置的传感器的接触结构与第二衬底或晶片上的配合结构一起形成，第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。

公开(公告)号：US08503161B1

公开(公告)日：2013-08-06

申请号：US13070467

申请日：2011-03-23

申请人： David T. Chang ,  Pamela R. Patterson ,  Ping Liu

发明人： David T. Chang ,  Pamela R. Patterson ,  Ping Liu

IPC分类号： H01G9/00 ,  H01G9/08

CPC分类号： H01G11/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01G11/28 ,  H01G11/36 ,  H01G11/46 ,  H01G11/82 ,  H01L28/91 ,  H01L29/0676 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  Y02E60/13

摘要： This invention provides a micro-supercapacitor with high energy density and high power density. In some variations, carbon nanostructures, such as carbon nanotubes, coated with a metal oxide, such as ruthenium oxide, are grown in a supercapacitor cavity that contains no separator. A lid is bonded to the cavity using a bonding process to form a hermetic seal. These micro-supercapacitors may be fabricated from silicon-on-insulator wafers according to the disclosed methods. An exemplary micro-supercapacitor is cubic with a length of about 50-100 μm. The absence of a separator translates to higher energy storage volume and less wasted space within the supercapacitor cell. The energy density of the micro-supercapacitor may exceed 150 J/cm3 and the peak output power density may be in the range of about 2-20 W/cm3, in various embodiments.

摘要翻译： 本发明提供了具有高能量密度和高功率密度的微型超级电容器。 在一些变型中，涂覆有金属氧化物（例如氧化钌）的碳纳米管结构，例如在不含隔板的超级电容器腔中生长。 使用接合工艺将盖结合到腔体以形成气密密封。 根据所公开的方法，这些微超级电容器可以由绝缘体上硅晶片制造。 示例性的微超级电容器是长度为约50-100μm的立方体。 没有分离器可以转换为更高的能量存储容量，并且在超级电容器单元内减少浪费的空间。 在各种实施例中，微超级电容器的能量密度可以超过150J / cm 3，峰值输出功率密度可以在约2-20W / cm 3的范围内。

公开(公告)号：US07923689B2

公开(公告)日：2011-04-12

申请号：US12433631

申请日：2009-04-30

申请人： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

发明人： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

IPC分类号： G01J5/02

CPC分类号： H01L27/14625 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14649 ,  H01L27/14685 ,  H01L31/0232 ,  H01L31/0236

摘要： In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 μm band. Detection of more than two wavelengths may be achieved by proper scaling. A method of forming an IR detector array is also disclosed.

摘要翻译： 在一个实施例中，多频带红外（IR）检测器阵列包括具有多个周期性谐振结构的金属表面，其被配置为在不同频带中共振地传输电磁能。 阵列上的多个像素包括至少对应于第一和第二波长的第一和第二谐振结构。 对于每个像素，第一和第二谐振结构具有相关联的检测器，并且被布置成使得第一波长的电磁能量基本上全部通过第一谐振结构到第一检测器上，并且基本上所有的第二电磁能量 波长通过第二谐振结构到第二检测器。 在一个实施例中，谐振结构是孔或狭缝，并且IR检测器可以是被配置为吸收8-12μm带中的辐射的巯基碲化物。 可以通过适当的缩放来实现超过两个波长的检测。 还公开了形成IR检测器阵列的方法。