公开(公告)号：US20050103259A1

公开(公告)日：2005-05-19

申请号：US10805790

申请日：2004-03-22

申请人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

发明人： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

IPC分类号： H01L21/205 ,  C30B25/04 ,  C30B29/40 ,  H01L21/20 ,  H01S5/323 ,  C30B23/00 ,  C30B28/14

CPC分类号： C30B29/40 ,  C30B25/04 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）和掩模图案生长半导体层的选择区域的方法包括形成在具有（100）的半导体衬底的半导体衬底上的第一掩模图案和第二掩模图案， 晶面。 第一掩模图案具有比选择区域宽的第一窗口，第二掩模图案具有第二窗口和第三窗口。 第二窗口是通过将第二掩模图案与第一掩模图案间隔开来定义的，与用于阻挡第一窗口边缘处的III族半导体源气体的表面迁移的阻挡区域相对应。 第三个窗口与选择区域一样宽。 通过MOCVD在由第二和第三窗口暴露的半导体衬底上生长半导体层。 可以在第二和第三窗口中蚀刻沟槽，并且生长层从沟槽延伸超过InP的表面到阻挡气体分散体。

公开(公告)号：US5665612A

公开(公告)日：1997-09-09

申请号：US512224

申请日：1995-08-07

申请人： Jung-Kee Lee ,  Dong-Hoon Jang ,  Jeong-Soo Kim ,  Kyung-Hyun Park

发明人： Jung-Kee Lee ,  Dong-Hoon Jang ,  Jeong-Soo Kim ,  Kyung-Hyun Park

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/30 ,  H01S5/343 ,  H01L21/265

CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313

摘要： Disclosed is a method for fabricating a planar buried heterostructure laser diode, comprising the steps of sequentially forming a first clad layer, an undoped active layer and a second clad layer on a substrate so as to complete a first crystal growth; forming a patterned mask layer on the second clad layer; non-selectively etching the second clad layer, the active layer, the first clad layer and the substrate using the mask layer as an etching mask; selectively etching the substrate and the first and second layers; sequentially forming a first and second current blocking layers on a structure formed by the selective etching step so as to complete a second crystal growth; sequentially forming a third clad layer and an ohmic contact layer thereon after removal of the mask layer so as to complete a third crystal growth; and forming a first electrode on a rear surface of the substrate and forming a second electrode on a surface of the third clad layer. By the method, a leakage current induced in an interface between the active layer and the first current blocking layer provided therein can be reduced in proportion to a distance between the active layer and the second current blocking layer formed on the first current blocking layer, and therefore performance of the laser diode can be enhanced.

摘要翻译： 公开了一种制造平面埋置异质结激光二极管的方法，包括以下步骤：在衬底上依次形成第一覆层，未掺杂有源层和第二覆层，以完成第一晶体生长; 在所述第二覆盖层上形成图案化掩模层; 使用掩模层作为蚀刻掩模，非选择性地蚀刻第二覆盖层，有源层，第一覆盖层和衬底; 选择性地蚀刻基板和第一和第二层; 在通过选择性蚀刻步骤形成的结构上依次形成第一和第二电流阻挡层，以完成第二晶体生长; 在除去掩模层之后依次形成第三覆层和欧姆接触层，以完成第三晶体生长; 以及在所述基板的后表面上形成第一电极，并在所述第三包覆层的表面上形成第二电极。 通过该方法，可以在有源层和其中设置的第一电流阻挡层之间的界面中感应的漏电流与形成在第一电流阻挡层上的有源层和第二电流阻挡层之间的距离成比例地减小，以及 因此可以提高激光二极管的性能。

公开(公告)号：US07965515B2

公开(公告)日：2011-06-21

申请号：US12276542

申请日：2008-11-24

申请人： Jung-Kee Lee ,  Mun-Kue Park ,  Du-Chang Heo

发明人： Jung-Kee Lee ,  Mun-Kue Park ,  Du-Chang Heo

IPC分类号： H05K7/20

CPC分类号： H05K7/20472

摘要： A heat radiating structure for an electronic module and an electronic device having the same structure thereon. The heat radiating structure is formed at the bottom of the electronic module to release the generated heat from the electronic module, and includes an impact absorber, which absorbs impact transferred from the outside. A heat radiating sheet is formed with a plurality of the multi-layered heat conductive sheets and is in contact with the bottom of the electronic module by covering the outside of the impact absorber.

摘要翻译： 一种用于电子模块和其上具有相同结构的电子设备的散热结构。 散热结构形成在电子模块的底部以从电子模块释放产生的热量，并且包括吸收从外部传递的冲击的冲击吸收体。 散热片形成有多个多层导热片，并且通过覆盖冲击吸收体的外部与电子模块的底部接触。

公开(公告)号：US20070139761A1

公开(公告)日：2007-06-21

申请号：US11641216

申请日：2006-12-19

申请人： Sun-Lyeong Hwang ,  Jung-Kee Lee ,  Sung-Soo Park ,  Du-Chang Heo ,  Byeong-Hoon Park

发明人： Sun-Lyeong Hwang ,  Jung-Kee Lee ,  Sung-Soo Park ,  Du-Chang Heo ,  Byeong-Hoon Park

IPC分类号： G02F1/35

CPC分类号： G02F1/377 ,  G02F1/3775 ,  G02F2203/30 ,  H01S5/0092 ,  H01S5/02248 ,  H01S5/06216 ,  H01S5/4012 ,  H01S5/4087 ,  H04N9/3129

摘要： A light source for wavelength conversion which can control gray scale includes a semiconductor laser including at least two radiators, to which different gray scale levels are allocated. Further included is a second-harmonic generator for performing wavelength conversion on lights radiated from the radiators, and outputting the wave-converted lights.

摘要翻译： 可以控制灰度的用于波长转换的光源包括包括至少两个散热器的半导体激光器，分配不同的灰度级。 还包括二次谐波发生器，用于对从散热器辐射的光进行波长转换，并输出波变换光。

公开(公告)号：US20070081214A1

公开(公告)日：2007-04-12

申请号：US11543666

申请日：2006-10-05

申请人： Mun-Kue Park ,  Jung-Kee Lee ,  Sung-Soo Park ,  Byeong-Hoon Park

发明人： Mun-Kue Park ,  Jung-Kee Lee ,  Sung-Soo Park ,  Byeong-Hoon Park

IPC分类号： G02B26/08

CPC分类号： G02B26/101 ,  G02B26/106 ,  G02B27/1006 ,  G02B27/102 ,  G02B27/104 ,  G02B27/108 ,  G02B27/1086 ,  G02B27/145 ,  G02B27/42 ,  G02B27/4227

摘要： An image scanning apparatus for realizing an image on a screen includes: a spatial light modulator module for diffracting light beams having different wavelengths into relevant modes; and an iris for limiting light beams of modes except a mode of 0th-order among the modes diffracted by the spatial light modulator module.

摘要翻译： 用于实现屏幕上的图像的图像扫描装置包括：用于将具有不同波长的光束衍射到相关模式的空间光调制器模块; 以及用于限制由空间光调制器模块衍射的模式中的除了第0 顺序的模式之外的模式的光束的光圈。

公开(公告)号：US20050157766A1

公开(公告)日：2005-07-21

申请号：US10864059

申请日：2004-06-09

申请人： Hyeon-Soo Kim ,  Young-Churl Bang ,  Jung-Kee Lee ,  Eun-Hwa Lee ,  Jun-Youn Kim

发明人： Hyeon-Soo Kim ,  Young-Churl Bang ,  Jung-Kee Lee ,  Eun-Hwa Lee ,  Jun-Youn Kim

IPC分类号： H01S5/026 ,  G02B6/122 ,  G02B6/14 ,  H01S5/00 ,  H01S5/10 ,  H01S5/223 ,  H01S5/50

CPC分类号： G02B6/1228 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1064 ,  H01S5/2231 ,  H01S5/50

摘要： A semiconductor optical device including an SSC region includes a semiconductor substrate, a lower clad layer grown on the semiconductor substrate, and an upper clad layer grown on the lower clad layer. The semiconductor optical device with an SSC (Spot Size Conversion) area includes a gain area including an active layer grown between the lower clad layer and the upper clad layer to generate/amplify an optical signal; and an SSC (Spot Size Conversion) area including a waveguide layer extended from the active layer positioned between the lower and upper clad layers, such that it performs a spot size conversion (SSC) process of the optical signal generated from the gain area and generates the SSC-processed optical signal. The waveguide layer of the SSC area is configured to gradually reduce its thickness in proportion to a distance from the active layer, and the upper clad layer is etched in the form of a taper structure such that the taper structure has a narrower width in proportion to a distance from one end of the semiconductor optical device having the gain area to the other end of the semiconductor optical device having the SSC area.

摘要翻译： 包括SSC区域的半导体光学器件包括半导体衬底，在半导体衬底上生长的下覆盖层和在下包层上生长的上覆层。 具有SSC（点尺寸转换）区域的半导体光学器件包括增益区域，包括在下包层和上覆层之间生长的有源层，以产生/放大光信号; 和SSC（点尺寸转换）区域，包括从位于下包层和上包层之间的有源层延伸的波导层，使得其执行从增益区域产生的光信号的光斑尺寸转换（SSC）处理，并产生 经SSC处理的光信号。 SSC区域的波导层被配置成与有源层的距离成比例地逐渐减小其厚度，并且上部包层以锥形结构的形式被蚀刻，使得锥形结构具有与 从具有增益区域的半导体光学器件的一端到具有SSC区域的半导体光学器件的另一端的距离。

公开(公告)号：US06798799B2

公开(公告)日：2004-09-28

申请号：US10095419

申请日：2002-03-11

申请人： Dong-Hoon Jang ,  Dong-Soo Bang ,  Jung-Kee Lee

发明人： Dong-Hoon Jang ,  Dong-Soo Bang ,  Jung-Kee Lee

IPC分类号： H01S304

CPC分类号： H01S5/026 ,  H01S5/02252 ,  H01S5/0264 ,  H01S5/0687 ,  H01S5/1085 ,  H01S5/125

摘要： A wavelength-locked, integrated optical signal source structure using a semiconductor laser device is disclosed. The optical source structure has a semiconductor laser formed on a semiconductor substrate, and an etched portion coupled with an output end of the semiconductor laser. The etched portion is configured to pass on a first amount of light beam radiated by the semiconductor laser, and to reflect a second amount of light beam by a given reflection angle. A multiple microcavity is formed in a position spaced apart from the etched portion, and the first amount of light beam is incident upon the multiple microcavity. The optical source structure has a first optical detector for detecting the first amount of light beam passing through the multiple microcavity, and a second optical detector for detecting the second amount of light beam reflected by a slanted, reflecting surface portion of the etched portion. The relative change in the light intensity in the first and second optical detectors is measured out to maintain a constant optical wavelength.

摘要翻译： 公开了一种使用半导体激光器件的波长锁定集成光信号源结构。 光源结构具有形成在半导体衬底上的半导体激光器和与半导体激光器的输出端耦合的蚀刻部分。 蚀刻部分被配置为通过由半导体激光器辐射的第一量光束并且以给定的反射角度反射第二量的光束。 多个微腔形成在与蚀刻部分间隔开的位置，并且第一量光束入射到多个微腔上。 光源结构具有用于检测通过多个微腔的第一光束量的第一光学检测器和用于检测被蚀刻部分的倾斜的反射表面部分反射的第二光束量的第二光学检测器。 测量第一和第二光学检测器中的光强度的相对变化以保持恒定的光学波长。

公开(公告)号：US5504768A

公开(公告)日：1996-04-02

申请号：US161422

申请日：1993-12-06

申请人： Chan-Yong Park ,  Ji-Beom Yoo ,  Kyung-Hyun Park ,  Hong-Man Kim ,  Dong-Hoon Jang ,  Jung-Kee Lee

发明人： Chan-Yong Park ,  Ji-Beom Yoo ,  Kyung-Hyun Park ,  Hong-Man Kim ,  Dong-Hoon Jang ,  Jung-Kee Lee

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S3/18 ,  H01L21/31

CPC分类号： H01S5/22 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2081

摘要： A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of the substrate. Since ohmic contact resistance is lowered, thermal generation and threshold current of oscillation are decreased. As a result, operating characteristics of the laser device can be largely improved.

摘要翻译： 一种制造半导体激光器件的方法，包括以下步骤：在InP衬底的上表面上依次形成有源层，光波导层，包层和欧姆接触层; 在所述欧姆接触层上形成第一图案化电介质层; 在欧姆接触层上沉积图案化的光致抗蚀剂以限定p-电极条纹层; 仅在欧姆接触层的一部分上形成p-电极条纹层; 进行退火处理; 使用第一图案化电介质层和p-电极条纹层作为蚀刻掩模，蚀刻层，直到光波导层被曝光，以形成脊; 在由此形成的衬底上沉积第二介电层; 选择性地去除所述第二电介质层以在所述p电极条带层上形成接触孔; 在所述第二电介质层和所述接触孔中涂覆焊垫金属层; 并在衬底的底表面上涂覆n-电极金属层。 由于欧姆接触电阻降低，所以发热和振荡的阈值电流降低。 结果，可以大大提高激光器件的工作特性。

公开(公告)号：US08558937B2

公开(公告)日：2013-10-15

申请号：US13292208

申请日：2011-11-09

申请人： Joong-Wan Park ,  Byung-Duck Cho ,  Jung-Kee Lee

发明人： Joong-Wan Park ,  Byung-Duck Cho ,  Jung-Kee Lee

IPC分类号： H04N5/222

CPC分类号： H04N5/2251 ,  G03B17/54 ,  G03B21/10 ,  G03B21/28 ,  H04N9/3176

摘要： Provided is a dual display device for a camera apparatus having a projector therein, which includes a rotary mirror module configured to project light of the projector to a front side of the camera apparatus body to display the light to the outside or to a rear side of the camera apparatus body while being rotated by driving of a drive motor.

摘要翻译： 提供了一种用于其中具有投影仪的相机装置的双显示装置，其包括旋转镜模块，该旋转镜模块被配置为将投影仪的光投射到照相机装置主体的前侧，以将光显示到外部或后方 相机装置主体通过驱动电动机的驱动而旋转。

公开(公告)号：US20120154663A1

公开(公告)日：2012-06-21

申请号：US13292208

申请日：2011-11-09

申请人： Joong-Wan PARK ,  Byung-Duck Cho ,  Jung-Kee Lee

发明人： Joong-Wan PARK ,  Byung-Duck Cho ,  Jung-Kee Lee

IPC分类号： H04N5/222

CPC分类号： H04N5/2251 ,  G03B17/54 ,  G03B21/10 ,  G03B21/28 ,  H04N9/3176

摘要： Provided is a dual display device for a camera apparatus having a projector therein, which includes a rotary mirror module configured to project light of the projector to a front side of the camera apparatus body to display the light to the outside or to a rear side of the camera apparatus body while being rotated by driving of a drive motor.

摘要翻译： 提供了一种用于其中具有投影仪的相机装置的双显示装置，其包括旋转镜模块，该旋转镜模块被配置为将投影仪的光投射到照相机装置主体的前侧，以将光显示到外部或后方 相机装置主体通过驱动电动机的驱动而旋转。