公开(公告)号：US09129882B2

公开(公告)日：2015-09-08

申请号：US14500764

申请日：2014-09-29

Applicant: Electronics and Telecommunications Research Institute

Inventor： Eun Kyoung Jeon ,  Hyun Seo Kang ,  Kwon-Seob Lim ,  Hyoung Jun Park ,  Keo-Sik Kim ,  Jeong Eun Kim ,  Young Sun Kim ,  Young Soon Heo

IPC: H01L21/44 ,  H01L29/16 ,  H01L21/283 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L29/1606 ,  H01L21/3081

Abstract: Provided is a method of fabricating a graphene nano device. The method includes forming a first metal mask pattern on a substrate on which a graphene layer is formed, and forming a graphene pattern by performing an etching process on the graphene layer using the first metal mask pattern as an etching mask. The forming of the first metal mask pattern includes forming a first adhesive layer on the graphene layer, disposing the first metal mask pattern prepared in advance on the first adhesive layer, and heating the first adhesive layer to attach the first metal mask pattern on the substrate.

Abstract translation: 提供了一种制造石墨烯纳米器件的方法。 该方法包括在其上形成有石墨烯层的基板上形成第一金属掩模图案，并且通过使用第一金属掩模图案作为蚀刻掩模对石墨烯层进行蚀刻处理来形成石墨烯图案。 第一金属掩模图案的形成包括在石墨烯层上形成第一粘合剂层，将预先制备的第一金属掩模图案设置在第一粘合剂层上，并加热第一粘合剂层以将第一金属掩模图案附着在基板上 。