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公开(公告)号：US20120001166A1
公开(公告)日：2012-01-05
申请号：US12827825
申请日：2010-06-30
IPC分类号： H01L31/0232 , H01L21/768
CPC分类号： G02B6/12 , G02B6/4232 , G02B6/4246 , G02B6/4249 , G02B6/4259 , G02B6/4267 , H01L27/04 , H01L29/02 , H01L31/0203 , H01L2224/16225 , H01S5/40
摘要： A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer.
摘要翻译： 提供了绝缘体上硅晶片。 绝缘体上硅晶片包括其中形成有光通孔的硅衬底。 此外，在硅衬底上设置光学透明氧化物层，并且光学透明氧化物层与光学通孔接触。 然后，在光学透明氧化物层上形成互补的金属氧化物半导体层。
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22.发明申请公开(公告)号：US20110119909A1
公开(公告)日：2011-05-26
申请号：US12623836
申请日：2009-11-23
CPC分类号： H05K3/303 , H05K3/3436 , H05K2201/10734 , H05K2203/166 , Y02P70/613 , Y10T29/4913 , Y10T29/49131 , Y10T29/49133 , Y10T29/53087 , Y10T29/53091 , Y10T29/53174 , Y10T29/53178 , Y10T29/53183 , Y10T29/53187
摘要： An apparatus and method for aligning one or more components while attaching the component to a substrate. The component is positioned over the substrate. An alignment tool is attachable to the component. The alignment tool includes a tool alignment element, an optical tool, and a substrate alignment element attached to the substrate. The tool alignment element aligns with the substrate alignment element such that the components are positioned at specified locations on the substrate for attachment to the substrate.
摘要翻译： 一种用于在将组件附着到基底上时对准一个或多个部件的装置和方法。 组件位于衬底上。 对齐工具可附接到组件。 对准工具包括工具对准元件，光学工具和附着到基板的衬底对准元件。 刀具对准元件与衬底对准元件对齐，使得元件被定位在衬底上的特定位置以附着于衬底。
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公开(公告)号：US20080230875A1
公开(公告)日：2008-09-25
申请号：US12131330
申请日：2008-06-02
IPC分类号： H01L23/58
CPC分类号： H01L21/76801 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02354 , H01L21/268 , H01L21/3122 , H01L21/31633 , H01L21/76825 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76835 , Y10T428/249978
摘要： A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.
摘要翻译： 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深超极化的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其不会不利地影响（增加）SiCOH介电膜的介电常数。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。
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公开(公告)号：US07033648B1
公开(公告)日：2006-04-25
申请号：US08781926
申请日：1996-12-30
CPC分类号： C23C18/22 , C23C18/1605 , C23C18/1641 , C23C18/1692 , C23C18/2006 , C23C18/208 , C23C18/30 , C23C18/31 , H05K1/0346 , H05K3/0032 , H05K3/184 , H05K3/381 , H05K2203/0793 , H05K2203/083 , H05K2203/095
摘要： A method to selectively metallize polyimide with an all-electroless process.
摘要翻译： 选择性地使全化学镀金属化聚酰亚胺的方法。
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公开(公告)号：US5793836A
公开(公告)日：1998-08-11
申请号：US716657
申请日：1996-09-06
申请人： Juan R. Maldonado , Raul E. Acosta , Marie Angelopoulos , Fuad E. Doany , Chandrasekhar Narayan , Andrew T. S. Pomerene , Jane M. Shaw , Kurt R. Kimmel
发明人： Juan R. Maldonado , Raul E. Acosta , Marie Angelopoulos , Fuad E. Doany , Chandrasekhar Narayan , Andrew T. S. Pomerene , Jane M. Shaw , Kurt R. Kimmel
CPC分类号： G03F1/62 , G03F1/22 , G03F1/64 , G03F7/70691
摘要： An X-ray mask pellicle is capable of protecting the X-ray mask from contaminants and the wafer from contact with the X-ray absorber material of the mask. The X-ray mask pellicle is sufficiently thin to allow X-ray exposure at the required mask to wafer gaps yet is sufficiently durable, replaceable, tough and X-ray resistant to be used in X-ray lithography. A thin (organic or inorganic) X-ray mask pellicle to be placed covering the X-ray mask pattern area is fabricated as a thin film and attached to a support ring. A selected area of the pellicle film, tailored to cover the absorber pattern in the X-ray mask, is etched to decrease its thickness to below 2 .mu.m. If the thin film of the pellicle is not itself conductive, a thin conductive film may be coated on both sides. In an alternative embodiment, the separation between the pellicle and the X-ray mask can be achieved by forming the mask with a stepped profile.
摘要翻译： X射线掩模防护薄膜组件能够保护X射线掩模免受污染物和晶片与掩模的X射线吸收材料的接触。 X射线掩模防护薄膜是足够薄的，以允许所需掩模的X射线暴露于晶片间隙，而且在X射线光刻中使用的是足够耐用的，可更换的，坚固的和耐X射线的。 将覆盖X射线掩模图案区域的薄（有机或无机）X射线掩模防护薄膜组件制成薄膜并附着在支撑环上。 为了覆盖X射线掩模中的吸收体图案而定制的防护薄膜的选定区域被蚀刻以将其厚度减小到低于2μm。 如果防护薄膜的薄膜本身不是导电的，则可以在两侧涂覆薄导电膜。 在替代实施例中，防护薄膜组件和X射线掩模之间的分离可以通过以阶梯轮廓形成掩模来实现。
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公开(公告)号：US5521709A
公开(公告)日：1996-05-28
申请号：US57357
申请日：1993-05-05
申请人： Douglas C. Bossen , Chin-Long Chen , Fuad E. Doany , Mu-Yue Hsiao , Ricky A. Rand , Ralf J. Terbruggen
发明人： Douglas C. Bossen , Chin-Long Chen , Fuad E. Doany , Mu-Yue Hsiao , Ricky A. Rand , Ralf J. Terbruggen
CPC分类号： G06K1/126 , G06K15/22 , Y10S235/90
摘要： A method and apparatus is provided for producing single width barcodes in a continuous, serpentine pattern. This pattern provides continuity of operation for laser marking instruments and thereby results in the formation of more uniform and higher quality barcode indicia. The use of a continuous serpentine pattern also increases the speed at which the code may be written onto a substrate. This marking method is particularly appropriate for use in marking a wide variety of materials including semiconductors, metals, plastics and ceramics.
摘要翻译： 提供了一种用于以连续的蛇形图案生产单个宽度条形码的方法和装置。 这种图案为激光打标仪器提供连续的操作，从而形成更均匀和更高质量的条形码标记。 使用连续的蛇形图案也增加了代码可以写入基板的速度。 该标记方法特别适用于标记各种材料，包括半导体，金属，塑料和陶瓷。
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公开(公告)号：US09229169B2
公开(公告)日：2016-01-05
申请号：US13211018
申请日：2011-08-16
申请人： Fuad E. Doany , Benjamin G. Lee , Clint L. Schow
发明人： Fuad E. Doany , Benjamin G. Lee , Clint L. Schow
IPC分类号： G02B6/32 , H01L21/302 , G02B6/30 , G02B6/42
CPC分类号： G02B6/32 , G02B6/30 , G02B6/4204 , G02B6/4244 , G02B6/425 , H01L21/302
摘要： A photonic integrated circuit apparatus is disclosed. The apparatus includes a photonic chip and a lens array coupling element. The photonic chip includes a waveguide at a side edge surface of the photonic chip. The lens array coupling element is mounted on a top surface of the photonic chip and on the side edge surface. The coupling element includes a lens array that is configured to modify spot sizes of light traversing to or from the waveguide. The coupling element further includes an overhang on a side of the coupling element that opposes the lens array and that abuts the top surface of the photonic chip. The overhang includes a vertical stop surface that has a depth configured to horizontally align an edge of the waveguide with a focal length of the lens array and that vertically aligns focal points of the lens array with the edge of the waveguide.
摘要翻译： 公开了一种光子集成电路装置。 该装置包括光子芯片和透镜阵列耦合元件。 光子芯片包括在光子芯片的侧边缘表面处的波导。 透镜阵列耦合元件安装在光子芯片的顶表面上并在侧边缘表面上。 耦合元件包括透镜阵列，其被配置为修改横穿波导的光的光斑大小。 耦合元件还包括在耦合元件的与透镜阵列相对并且邻接光子芯片的顶表面的一侧上的突出端。 突出部分包括垂直的止动表面，其具有配置成将波导的边缘与透镜阵列的焦距水平对准的深度，并且使透镜阵列的焦点与波导的边缘垂直对准。
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28.发明申请SILICON PHOTONICS WAFER USING STANDARD SILICON-ON-INSULATOR PROCESSES THROUGH SUBSTRATE REMOVAL OR TRANSFER 有权使用通过基板去除或转移的标准硅绝缘体工艺的硅光电晶体公开(公告)号：US20130181233A1
公开(公告)日：2013-07-18
申请号：US13353162
申请日：2012-01-18
CPC分类号： H01L21/76251
摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.
摘要翻译： 提供了硅光子晶片的处理。 接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。 薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。 还接收包括有源电层的电CMOS晶片。 硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。 去除暴露出薄的掩埋氧化物层的背面的硅衬底。 将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。 低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。 硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。
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29.发明授权公开(公告)号：US08176624B2
公开(公告)日：2012-05-15
申请号：US12623836
申请日：2009-11-23
IPC分类号： B23P19/00
CPC分类号： H05K3/303 , H05K3/3436 , H05K2201/10734 , H05K2203/166 , Y02P70/613 , Y10T29/4913 , Y10T29/49131 , Y10T29/49133 , Y10T29/53087 , Y10T29/53091 , Y10T29/53174 , Y10T29/53178 , Y10T29/53183 , Y10T29/53187
摘要： An apparatus and method for aligning one or more components while attaching the component to a substrate. The component is positioned over the substrate. An alignment tool is attachable to the component. The alignment tool includes a tool alignment element, an optical tool, and a substrate alignment element attached to the substrate. The tool alignment element being alignable with the substrate alignment element such that the components are positioned at specified locations on the substrate for attachment to the substrate. Further, in the method according to the disclosure, the tool alignment element aligning with the substrate alignment element to position one or more components at a specified location on the substrate.
摘要翻译： 一种用于在将组件附着到基底上时对准一个或多个部件的装置和方法。 组件位于衬底上。 对齐工具可附接到组件。 对准工具包括工具对准元件，光学工具和附着到基板的衬底对准元件。 工具对准元件可与衬底对准元件对准，使得元件被定位在衬底上的特定位置以附着于衬底。 此外，在根据本公开的方法中，工具对准元件与衬底对准元件对准以将一个或多个部件定位在衬底上的指定位置。
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公开(公告)号：US07755159B2
公开(公告)日：2010-07-13
申请号：US12131330
申请日：2008-06-02
IPC分类号： H01L29/00
CPC分类号： H01L21/76801 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02354 , H01L21/268 , H01L21/3122 , H01L21/31633 , H01L21/76825 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76835 , Y10T428/249978
摘要： A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.
摘要翻译： 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深层超导体的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其不会不利地影响（增加）SiCOH介电膜的介电常数。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。
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