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28 条记录 (耗时 0.022 秒)

    Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness
    23.
    发明授权
    Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness 失效
    具有Si种子层的旋转阀结构和降低的PtMn反铁磁层厚度

    公开(公告)号：US07149062B2

    公开(公告)日：2006-12-12

    申请号：US10084845

    申请日：2002-02-26

    申请人： Mustafa Pinarbasi ,  Patrick Rush Webb

    发明人： Mustafa Pinarbasi ,  Patrick Rush Webb

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49067

    摘要： A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 Å and the PtMn layer has a thickness of approximately 120 Å. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 20 Å. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ΔR/R and reduced coercivity.

    摘要翻译： 具有自旋阀传感器的磁头，其使用随后制造PtMn自旋阀传感器层结构的Al 2 O 3 N，NiMnO，Si种子层制造。 在优选实施例中，Si层的厚度约为20埃，PtMn层的厚度约为120埃。 Si层的替代制造工艺包括将该层过度沉积到第一厚度为从Å至Å至的第一厚度，接着将种子层的蚀刻回到大约5至大约15至所期望的最终厚度约为20 一个。 Si层导致随后制备的PtMn和其它自旋阀传感器层的改进的晶体结构，使得制造的自旋阀更薄并且表现出增加的DeltaR / R和降低的矫顽力。

    Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive
    24.
    发明授权
    Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive 失效
    用于硬盘驱动器的磁阻磁头的热稳定氧化偏压层结构

    公开(公告)号：US07085110B2

    公开(公告)日：2006-08-01

    申请号：US10615554

    申请日：2003-07-07

    申请人： Elizabeth Ann Dobisz ,  James Mac Freitag ,  Mustafa Michael Pinarbasi ,  Patrick Rush Webb

    发明人： Elizabeth Ann Dobisz ,  James Mac Freitag ,  Mustafa Michael Pinarbasi ,  Patrick Rush Webb

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3906 ,  Y10T29/49032

    摘要： The magnetic head of the present invention includes a magnetoresistive read head element in which a magnetic bias layer is deposited across the surface of the wafer above the free magnetic layer. Central portions of the biasing layer that correspond to the read head track width are oxidized to essentially remove the magnetic moment of the bias layer material in those central locations. An oxygen diffusion barrier layer is then deposited upon the oxidized central portions of the biasing layer to prevent diffusion or migration of oxygen from the oxidized central regions of the biasing layer. An insulation layer, a second magnetic shield layer and further structures of the magnetic head are subsequently fabricated.

    摘要翻译： 本发明的磁头包括磁阻读头元件，其中磁偏置层跨过自由磁层上的晶片表面。 对应于读头磁道宽度的偏置层的中心部分被氧化以基本上去除那些中心位置处的偏置层材料的磁矩。 然后将氧扩散阻挡层沉积在偏置层的氧化中心部分上，以防止氧从偏置层的氧化中心区域扩散或迁移。 随后制造绝缘层，第二磁屏蔽层和磁头的其它结构。

    Exchange biased self-pinned spin valve sensor with recessed overlaid leads
    27.
    发明授权
    Exchange biased self-pinned spin valve sensor with recessed overlaid leads 失效
    交替偏置自锁自旋阀传感器，带有凹进的重叠导线

    公开(公告)号：US06744607B2

    公开(公告)日：2004-06-01

    申请号：US10104457

    申请日：2002-03-21

    申请人： James Mac Freitag ,  Mustafa Pinarbasi ,  Patrick Rush Webb

    发明人： James Mac Freitag ,  Mustafa Pinarbasi ,  Patrick Rush Webb

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the spin valve sensor and are exchange coupled to first and second AFM pinning layers. Magnetic moments of the wing portions of the free layer are pinned parallel to the ABS and parallel to major planes of the layers of the sensor for magnetically stabilizing the central portion of the free layer which is located within the track width. The spin valve sensor has a central portion that extends between the first and second AFM layers. First and second lead layers overlay the first and second AFM layers and further overlay first and second portions of the central portion so that a distance between the first and second lead layers defines a track width that is less than a distance between the first and second AFM layers. The spin valve sensor has a cap layer structure that has a full thickness portion which is located between first and second reduced thickness portions and the first and second lead layers engage the cap layer structure within the first and second reduced thickness portions.

    摘要翻译： 自旋阀传感器包括反并联（AP）钉扎层结构，其在没有反铁磁（AFM）钉扎层的帮助下是自固定的。 自旋阀传感器的自由层具有横向延伸超过自旋阀传感器的轨道宽度的第一和第二翼部分，并且交换耦合到第一和第二AFM钉扎层。 自由层的翼部的磁矩被平行于ABS并且平行于传感器的各层的主平面固定，以磁化地稳定位于轨道宽度内的自由层的中心部分。 自旋阀传感器具有在第一和第二AFM层之间延伸的中心部分。 第一和第二引线层覆盖第一和第二AFM层，并进一步覆盖中心部分的第一和第二部分，使得第一和第二引线层之间的距离限定小于第一和第二AFM之间的距离的轨道宽度 层。 自旋阀传感器具有盖层结构，其具有位于第一和第二厚度减小部分之间的全部厚度部分，并且第一和第二引线层与第一和第二厚度部分内的盖层结构接合。