Semiconductor laser element and semiconductor laser element array
    21.
    发明授权
    Semiconductor laser element and semiconductor laser element array 失效
    半导体激光元件和半导体激光元件阵列

    公开(公告)号:US07447248B2

    公开(公告)日:2008-11-04

    申请号:US10591229

    申请日:2005-03-04

    IPC分类号: H01S5/00 H01S3/08

    摘要: The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle θ, which is equal to or less than the complementary angle θc of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.

    摘要翻译: 半导体激光元件等技术领域本发明涉及能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件等。 半导体激光元件具有依次层叠n型覆层,有源层和p型覆层的结构。 p型包覆层具有用于在有源层中形成折射率型波导的脊部。 脊部至少除了边缘之外的部分沿着与角度θ对应于发光面和光反射面的折射率型波导的两个端面的每条法线的方向延伸, 等于或小于折射率型波导侧面上的全反射临界角的互补角度。 在由具有上述形式的脊部形成的折射率型波导中共振的光分量的光路限于光折射率型波导的侧面全光反射的光路。 换句话说,从发光端发射的激光束具有空间水平单模,并且可以增加波导宽度以进一步降低激光束的发射角。

    Semiconductor Laser Element and Semiconductor Laser Element Array
    22.
    发明申请
    Semiconductor Laser Element and Semiconductor Laser Element Array 失效
    半导体激光元件和半导体激光元件阵列

    公开(公告)号:US20070258496A1

    公开(公告)日:2007-11-08

    申请号:US10591229

    申请日:2005-03-04

    IPC分类号: H01S5/22

    摘要: The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle θ, which is equal to or less than the complementary angle θc of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.

    摘要翻译: 半导体激光元件等技术领域本发明涉及能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件等。 半导体激光元件具有依次层叠n型覆层,有源层和p型覆层的结构。 p型包覆层具有用于在有源层中形成折射率型波导的脊部。 脊部至少除了边缘之外的部分沿着与角度θ对应于发光面和光反射面的折射率型波导的两个端面的每条法线的方向延伸, 等于或小于折射率型波导侧面上的全反射临界角的互补角度。 在由具有上述形式的脊部形成的折射率型波导中共振的光分量的光路限于光折射率型波导的侧面全光反射的光路。 换句话说,从发光端发射的激光束具有空间水平单模,并且可以增加波导宽度以进一步降低激光束的发射角。

    Condenser
    23.
    发明申请
    Condenser 失效
    冷凝器

    公开(公告)号:US20060152811A1

    公开(公告)日:2006-07-13

    申请号:US10525670

    申请日:2003-08-28

    IPC分类号: G02B27/10

    摘要: An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array stack (12, 22), collimator lenses (16, 26), and beam converters (18, 28). Since the optical combiner (30) combines the beams from one (12) of the stacks and the beams from the other (22), a laser beam with high optical density is generated. The optical combiner (30) has transmitting portions (32) and reflecting portions (34), each of which preferably has a strip-like shape elongated in the layering directions of the stacks (12, 22). In this case, the beams emitted from the active layers (14, 24) will be received and combined appropriately by the optical combiner (30) even if positional deviation of the active layers (14, 24) occurs.

    摘要翻译: 光学聚光装置具有光源(10,20)和光学组合器(30)。 每个光源(10,20)包括半导体激光器阵列叠层(12,22),准直透镜(16,26)和光束转换器(18,28)。 由于光学组合器(30)组合来自一个(12)堆叠的光束和来自另一个(22)的光束,因此产生具有高光密度的激光束。 光学组合器(30)具有透光部分(32)和反射部分(34),每个反射部分(34)优选地具有在叠层(12,22)的层叠方向上细长的条状形状。 在这种情况下,即使发生有源层(14,24)的位置偏移,从有源层(14,24)发射的光束将被光组合器(30)适当地接收和组合。

    Semiconductor laser device
    24.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号:US08879592B2

    公开(公告)日:2014-11-04

    申请号:US13877911

    申请日:2011-10-12

    摘要: A semiconductor laser bar 2 is mounted onto a liquid-cooled heat sink 1. A molybdenum reinforcement member 3 is fixed onto the surface opposite to the surface on which the semiconductor laser module 2 is mounted. The molybdenum has a linear expansion coefficient less than that of the heat sink 1. Sub-mounts are preferably made of a Cu—W alloy, more preferably of the reinforcement member 3 molybdenum. In this case, the stresses that are imposed on the heat sink 1 when being expanded or contracted can cancel each other out.

    摘要翻译: 半导体激光棒2安装在液冷式散热器1上。钼加强件3固定在与安装有半导体激光器模块2的表面相对的表面上。 钼的线膨胀系数小于散热器1的线性膨胀系数。子座优选由Cu-W合金制成,更优选由增强构件3钼制成。 在这种情况下,当膨胀或收缩时施加在散热器1上的应力可以彼此抵消。

    Semiconductor laser device and semiconductor laser device array
    25.
    发明授权
    Semiconductor laser device and semiconductor laser device array 失效
    半导体激光器件和半导体激光器件阵列

    公开(公告)号:US07885305B2

    公开(公告)日:2011-02-08

    申请号:US11659198

    申请日:2005-08-04

    IPC分类号: H01S5/00

    摘要: In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total reflection critical angle θc at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.

    摘要翻译: 在半导体激光装置3的有源层15中,折射率型主波导4由p型覆盖层17的脊部9a形成。主波导4的侧面4g,4h形成相对角度θ ;相对于发光表面1a和光反射表面1b,基于侧表面4g和4h处的全反射临界角和c。 主波导4与发光面1a和光反射面1b分离规定距离,激光L1通过的光路部8a,8b配置在主波导管4的一端和 发光表面1a和主波导4的另一端和光反射表面1b之间。 光路部分8a和8b是增益型波导,并且发射光通过光路部分8a和8b的光从预定轴线A的方向偏离的光分量L2和L3到外部。 从而可以实现能够发出较高强度的激光并能够减少侧峰的半导体激光器件和半导体激光器件阵列。

    Laser beam machine
    26.
    发明授权
    Laser beam machine 失效
    激光束机

    公开(公告)号:US07622694B2

    公开(公告)日:2009-11-24

    申请号:US11358113

    申请日:2006-02-22

    IPC分类号: B23K26/00

    摘要: In this laser beam machine 1, while a pressing portion 9 of an optical guide member 6 presses a lid 13 against a body 12 of a container, the optical guide member 6 annularly guides a laser beam propagated through an optical fiber 4 and outputs it from the pressing portion 9. Thereby, an annular processing region of the body 12 and the lid 13 is entirely irradiated with the laser beam at one time and the lid 13 can be joined to the body 12, whereby improving the working efficiency. Such improvement in working efficiency shortens the processing time and improves the production yield. Furthermore, this laser beam machine 1 does not need to be separately provided with a rotating mechanism for laser beam scanning and a pressurizing mechanism for the body 12 and the lid 13, so that construction of the machine can be significantly simplified.

    摘要翻译: 在该激光束机1中,当导光构件6的按压部9将盖13压靠在容器的主体12上时,光导构件6环形地引导通过光纤4传播的激光束,并将其从 由此,主体12和盖13的环状处理区域一次被激光束全部照射,并且盖13能够接合到主体12,由此提高了工作效率。 这种工作效率的提高缩短了加工时间,提高了生产成本。 此外,该激光束机1不需要分别设置有用于激光束扫描的旋转机构和用于主体12和盖13的加压机构,使得能够显着简化机器的结构。

    Laser device
    27.
    发明授权
    Laser device 失效
    激光设备

    公开(公告)号:US07599414B2

    公开(公告)日:2009-10-06

    申请号:US11628414

    申请日:2005-07-08

    IPC分类号: H01S3/04

    摘要: A laser apparatus (100) has a semiconductor laser device (12a to 12c), coolant jetting means (24), and a heatsink (18a to 18c). The semiconductor laser device has a light output surface (50) for emitting laser light. The coolant jetting means has a coolant chamber (53) for accommodating a coolant, an inflow port (54) communicating with the coolant chamber, and a jet port (25) opposing the light output surface of the laser device. The heatsink has a laser mount surface (36) for mounting the semiconductor laser device, and a flow path (68a to 68c) where the coolant (56) jetted from the jet port flows in. When the coolant chamber is fed with the coolant, the jet port jets the coolant onto the light output surface of the semiconductor laser device. Since the light output surface is directly cooled by a jet flow of the coolant, cooling efficiency is excellent.

    摘要翻译: 激光装置(100)具有半导体激光装置(12a〜12c),冷却水喷射装置(24)和散热片(18a〜18c)。 半导体激光装置具有用于发射激光的光输出表面(50)。 冷却剂喷射装置具有用于容纳冷却剂的冷却剂室(53),与冷却剂室连通的流入口(54)和与激光装置的光输出表面相对的喷射口(25)。 散热器具有用于安装半导体激光器件的激光器安装表面(36)和从喷射口喷射的冷却剂(56)流入的流路(68a至68c)。当冷却剂腔被供给冷却剂时, 喷射口将冷却剂喷射到半导体激光装置的光输出表面上。 由于光输出表面被冷却剂的喷射流直接冷却,所以冷却效率优异。

    Semiconductor laser device and semiconductor laser element array
    28.
    发明授权
    Semiconductor laser device and semiconductor laser element array 失效
    半导体激光器件和半导体激光元件阵列

    公开(公告)号:US07577174B2

    公开(公告)日:2009-08-18

    申请号:US11596249

    申请日:2005-06-23

    IPC分类号: H01S5/10

    CPC分类号: H01S5/22

    摘要: The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof. The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.

    摘要翻译: 本发明涉及例如能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件。 半导体激光元件包括第一半导体部分,有源层和第二半导体部分。 第一半导体部分具有用于在有源层中形成折射率型波导区域的脊部分。 波导区域至少包括在其侧表面具有各自不同的全反射临界角的第一和第二部分。 第一和第二部分被布置成使得其侧表面相对于位于有源层的任一端处的发光表面和光反射表面的相对角度大于在该有源层的任一端处的全反射临界角 侧面。 在这种情况下,第一部分中的侧表面与发光表面和光反射表面的相对角度与第二部分中的侧表面相对于发光表面和光反射表面的相对角度不同。

    Semiconductor laser device and method of manufacturing the same
    29.
    发明授权
    Semiconductor laser device and method of manufacturing the same 失效
    半导体激光器件及其制造方法

    公开(公告)号:US07486710B2

    公开(公告)日:2009-02-03

    申请号:US10577958

    申请日:2004-12-16

    IPC分类号: H01S3/04

    摘要: A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.

    摘要翻译: 半导体激光装置1包括:散热器20,其又包括通过连接金属构件形成的主冷却器单元21,形成在主冷却器单元21内部的流体通道30,外壁表面22上的冷却区域23 ,除了冷却区域23以外,连续地涂布在外壁面22和内壁面33上的树脂层40。 并且与保持与外壁面22热接触的位于冷却区域23的半导体激光元件80。 通过除了冷却区域23之外,通过用树脂层40连续地涂覆外壁面22和内壁面33,可以防止在外壁面和内壁面彼此接触的部分附近的腐蚀。

    Semiconductor Laser Equipment
    30.
    发明申请
    Semiconductor Laser Equipment 失效
    半导体激光设备

    公开(公告)号:US20080247432A1

    公开(公告)日:2008-10-09

    申请号:US10593033

    申请日:2005-03-08

    IPC分类号: H01S3/04

    摘要: This invention relates to a semiconductor laser apparatus having a structure to prevent corrosion in a refrigerant flow path of a heat sink and cool stably a semiconductor laser array over a long period. The semiconductor laser apparatus has a semiconductor laser stack, a refrigerant supplier, an insulating piping, and a refrigerant. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. The insulating piping is an insulating piping with flexibility. An grounded conductive material is arranged inside the insulating piping. The conductive material operates to remove static electricity generated where the refrigerant flows inside the insulating piping.

    摘要翻译: 本发明涉及一种具有防止散热器制冷剂流路中的腐蚀并长时间稳定地冷却半导体激光器阵列的结构的半导体激光装置。 半导体激光装置具有半导体激光器堆叠,制冷剂供给器,绝缘管道和制冷剂。 制冷剂供应器将制冷剂供应到半导体激光器堆叠。 制冷剂由碳氟化合物构成。 绝缘管是具有柔性的绝缘管。 绝缘管道内布置有接地导电材料。 导电材料用于除去制冷剂在绝热管道内流动的静电。