公开(公告)号：US07880171B2

公开(公告)日：2011-02-01

申请号：US11022520

申请日：2004-12-22

申请人： Joseph J. Sumakeris ,  Ranbir Singh ,  Michael James Paisley ,  Stephan Georg Mueller ,  Hudson M. Hobgood ,  Calvin H. Carter, Jr. ,  Albert Augustus Burk, Jr.

发明人： Joseph J. Sumakeris ,  Ranbir Singh ,  Michael James Paisley ,  Stephan Georg Mueller ,  Hudson M. Hobgood ,  Calvin H. Carter, Jr. ,  Albert Augustus Burk, Jr.

IPC分类号： H01L31/0312

CPC分类号： H01L29/1608 ,  C30B19/00 ,  C30B23/002 ,  C30B25/02 ,  C30B29/36 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/732 ,  H01L29/744 ,  H01L29/861

摘要： A bipolar device has at least one p− type layer of single crystal silicon carbide and at least one n− type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.

摘要翻译： 双极器件具有至少一个单晶碳化硅的p型层和至少一个单晶碳化硅的n型层，其中在正向操作下生长的那些堆垛层错的那些部分与至少一个 活动区域和设备的其余部分之间的接口。

公开(公告)号：US07323051B2

公开(公告)日：2008-01-29

申请号：US11248458

申请日：2005-10-12

申请人： Hudson M. Hobgood ,  Jason R. Jenny ,  David Phillip Malta ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr. ,  Robert Tyler Leonard ,  George J. Fechko, Jr.

发明人： Hudson M. Hobgood ,  Jason R. Jenny ,  David Phillip Malta ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr. ,  Robert Tyler Leonard ,  George J. Fechko, Jr.

IPC分类号： C30B25/12

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  C30B33/00 ,  H01L21/324 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1016 ,  Y10T428/21 ,  Y10T428/31

摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.

摘要翻译： 公开了用于在种子生长系统中生产高质量的碳化硅块状单晶的方法。 该方法包括用低孔隙率背衬材料将晶种定位在种子保持器上，该材料提供了从种子对碳化硅升华的蒸汽屏障，并使种子和背衬材料之间的热导率差最小化以最小化或消除温差 跨越种子，并且同样使来自种子后部的蒸汽输送最小化或消除，否则将引发和传播生长晶体中的缺陷。

公开(公告)号：US07220313B2

公开(公告)日：2007-05-22

申请号：US10628188

申请日：2003-07-28

申请人： George J. Fechko, Jr. ,  Jason R. Jenny ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr.

发明人： George J. Fechko, Jr. ,  Jason R. Jenny ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr.

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B23/005 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/906

摘要： The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

摘要翻译： 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢的环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。

公开(公告)号：US06974720B2

公开(公告)日：2005-12-13

申请号：US10686795

申请日：2003-10-16

申请人： Joseph John Sumakeris ,  Hudson McDonald Hobgood ,  Michael James Paisley ,  Jason Ronald Jenny ,  Calvin H. Carter, Jr. ,  Valeri Fedorovich Tsvetkov

发明人： Joseph John Sumakeris ,  Hudson McDonald Hobgood ,  Michael James Paisley ,  Jason Ronald Jenny ,  Calvin H. Carter, Jr. ,  Valeri Fedorovich Tsvetkov

IPC分类号： C30B29/36 ,  C30B31/20 ,  H01L21/04 ,  H01L29/24 ,  H01L29/739 ,  H01L29/78 ,  H01L29/808 ,  H01L29/861 ,  H01L29/868 ,  H01L31/0312 ,  H01L4/00

CPC分类号： H01L29/7813 ,  C30B29/36 ,  C30B31/20 ,  H01L21/0455 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/868

摘要： Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015 cm−3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.

公开(公告)号：US06639247B2

公开(公告)日：2003-10-28

申请号：US09810830

申请日：2001-03-16

申请人： Calvin H. Carter, Jr. ,  Mark Brady ,  Valeri F. Tsvetkov

发明人： Calvin H. Carter, Jr. ,  Mark Brady ,  Valeri F. Tsvetkov

IPC分类号： H01L310312

CPC分类号： C30B23/00 ,  C30B29/36 ,  C30B33/00

摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

摘要翻译： 公开了一种半绝缘体碳化硅单晶，其在室温下的电阻率至少为5000欧姆厘米，深层捕获元素的浓度低于将影响晶体电阻率的量，优选低于 可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。

公开(公告)号：US5210051A

公开(公告)日：1993-05-11

申请号：US710827

申请日：1991-06-05

申请人： Calvin H. Carter, Jr.

发明人： Calvin H. Carter, Jr.

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L33/62 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L24/32 ,  H01L33/0008 ,  H01L33/007 ,  H01L2924/12032 ,  H01L2924/12041 ,  Y10S148/046 ,  Y10S148/113 ,  Y10S148/148 ,  Y10S438/925

摘要： The invention is a method of growing intrinsic, substantially undoped single crystal gallium nitride with a donor concentration of 7.times.10.sup.17 cm.sup.-3 or less. The method comprises introducing a source of nitrogen into a reaction chamber containing a growth surface while introducing a source of gallium into the same reaction chamber and while directing nitrogen atoms and gallium atoms to a growth surface upon which gallium nitride will grow. The method further comprises concurrently maintaining the growth surface at a temperature high enough to provide sufficient surface mobility to the gallium and nitrogen atoms that strike the growth surface to reach and move into proper lattice sites, thereby establishing good crystallinity, to establish an effective sticking coefficient, and to thereby grow an epitaxial layer of gallium nitride on the growth surface, but low enough for the partial pressure of nitrogen species in the reaction chamber to approach the equilibrium vapor pressure of those nitrogen species over gallium nitride under the other ambient conditions of the chamber to thereby minimize the loss of nitrogen from the gallium nitride and the nitrogen vacancies in the resulting epitaxial layer.

摘要翻译： 本发明是一种增长施用浓度为7×10 17 cm -3或更小的本征的，基本上未掺杂的单晶氮化镓的方法。 该方法包括将氮源引入含有生长表面的反应室中，同时将镓源引入相同的反应室中，同时将氮原子和镓原子引导到氮化镓将生长的生长表面上。 该方法还包括同时将生长表面保持在足够高的温度，以提供足够的表面迁移率，使镓和氮原子进入生长表面以达到并移动到合适的晶格位置，从而建立良好的结晶度，以建立有效的粘附系数 ，从而在生长表面上生长氮化镓的外延层，但是足够低以使反应室中的氮物质的分压在氮化镓的其它环境条件下接近氮化镓上的氮物质的平衡蒸气压 从而使来自氮化镓的氮的损失和所得外延层中的氮空位最小化。