公开(公告)号：US20080023695A1

公开(公告)日：2008-01-31

申请号：US11782980

申请日：2007-07-25

申请人： Seung Hwan CHO ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

发明人： Seung Hwan CHO ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0545 ,  H01L27/3246 ,  H01L51/052

摘要： An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.

摘要翻译： 一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。 有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线并包括有机半导体层的薄膜晶体管，连接到薄的晶体管的像素电极 薄膜晶体管，保护薄膜晶体管的有机保护层，提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层 与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。

公开(公告)号：US20080012024A1

公开(公告)日：2008-01-17

申请号：US11777174

申请日：2007-07-12

申请人： Keun Kyu SONG ,  Seung Hwan Cho ,  Bo Sung Kim ,  Young Min Kim ,  Jung Han Shin

发明人： Keun Kyu SONG ,  Seung Hwan Cho ,  Bo Sung Kim ,  Young Min Kim ,  Jung Han Shin

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/3274 ,  H01L27/3276 ,  H01L51/0545 ,  H01L51/102

摘要： An organic thin film transistor (“TFT”) substrate for facilitating control of the turn-on and turn-off actions of the TFT. The organic TFT substrate includes a gate line on a substrate, a pixel electrode in the same plane as the gate line, a data line insulated from the gate line, an organic TFT including a gate electrode connected to the gate line, a source electrode connected to the data line and insulated from the gate line, a drain electrode connected to the pixel electrode and insulated from the gate electrode, and an organic semiconductor layer contacting each of the source and drain electrodes, and a gate-insulating layer on the gate line and the gate electrode.

摘要翻译： 有机薄膜晶体管（“TFT”）基板，用于控制TFT的导通和关断动作。 有机TFT基板包括在基板上的栅极线，与栅极线相同的平面中的像素电极，与栅极线绝缘的数据线，包括连接到栅极线的栅电极的有机TFT，连接到源电极 与栅极线绝缘的绝缘电极，连接到像素电极并与栅电极绝缘的漏电极以及接触源极和漏极之间的有机半导体层以及栅极线上的栅极绝缘层 和栅电极。

公开(公告)号：US08871577B2

公开(公告)日：2014-10-28

申请号：US13436689

申请日：2012-03-30

申请人： Yeon Taek Jeong ,  Bo Sung Kim ,  Doo-Hyoung Lee ,  June Whan Choi ,  Tae-Young Choi ,  Kano Masataka

发明人： Yeon Taek Jeong ,  Bo Sung Kim ,  Doo-Hyoung Lee ,  June Whan Choi ,  Tae-Young Choi ,  Kano Masataka

IPC分类号： H01L21/00 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/512 ,  H01L29/786 ,  H01L2029/42388

摘要： A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

摘要翻译： 提供薄膜晶体管。 根据本发明的示例性实施例的薄膜晶体管包括：基板; 栅极线，设置在所述基板上并且包括栅电极; 半导体层，设置在所述基板上，并且至少包括与所述栅电极重叠的部分; 设置在所述栅极线和所述半导体层之间的栅极绝缘层; 以及设置在所述基板上并且在所述半导体层的沟道区域上彼此面对的源电极和漏电极。 栅极绝缘层包括第一区域和第二区域，第一区域对应于半导体层的沟道区域，第一区域由第一材料制成，第二区域由第二材料制成，第一材料 并且第二材料具有不同的碳和硅原子数比。

公开(公告)号：US20130248850A1

公开(公告)日：2013-09-26

申请号：US13571684

申请日：2012-08-10

申请人： Tae-Young CHOI ,  Bo Sung Kim ,  Byungju Lee ,  Kangmoon Jo

发明人： Tae-Young CHOI ,  Bo Sung Kim ,  Byungju Lee ,  Kangmoon Jo

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L27/32

CPC分类号： H01L29/7869 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor includes a source electrode, a drain electrode, a channel portion disposed between the source electrode and the drain electrode, and a gate electrode disposed on the channel portion and insulated from the channel portion. The source electrode, the drain electrode, and the channel portion are disposed on a same layer. A display apparatus includes a display device and the thin film transistor that applies a driving signal to the display device.

摘要翻译： 薄膜晶体管包括源电极，漏电极，设置在源电极和漏电极之间的沟道部分，以及设置在沟道部分上并与沟道部分绝缘的栅电极。 源电极，漏电极和沟道部分设置在同一层上。 显示装置包括显示装置和向显示装置施加驱动信号的薄膜晶体管。

公开(公告)号：US07358104B2

公开(公告)日：2008-04-15

申请号：US11359138

申请日：2006-02-22

申请人： Bo Sung Kim ,  Kwan-Wook Jung ,  Wan-Shick Hong ,  Sang-Gab Kim ,  Mun-Pyo Hong

发明人： Bo Sung Kim ,  Kwan-Wook Jung ,  Wan-Shick Hong ,  Sang-Gab Kim ,  Mun-Pyo Hong

IPC分类号： H01L21/00

CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1288

摘要： A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mas, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the firs wire via the contact holes.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成第一线，在第一线上形成下膜，使用感光材料在下膜上形成感光图案，形成用于通过蚀刻下部的第一线露出的接触孔 使用感光膜作为蚀刻的膜，通过灰化处理去除部分感光膜图案以暴露限定接触孔的下膜的边界，并且形成通过接触孔连接到第一线的第二线。

公开(公告)号：US20080017851A1

公开(公告)日：2008-01-24

申请号：US11781109

申请日：2007-07-20

申请人： Tae Young CHOI ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

发明人： Tae Young CHOI ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0096 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/107 ,  Y02E10/549

摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.

摘要翻译： 公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。

公开(公告)号：US20060138424A1

公开(公告)日：2006-06-29

申请号：US11359138

申请日：2006-02-22

申请人： Bo Sung Kim ,  Kwan-Wook Jung ,  Wan-Shick Hong ,  Sang-Gab Kim ,  Mun-Pyo Hong

发明人： Bo Sung Kim ,  Kwan-Wook Jung ,  Wan-Shick Hong ,  Sang-Gab Kim ,  Mun-Pyo Hong

IPC分类号： H01L29/04

CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1288

摘要： A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mas, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the firs wire via the contact holes.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成第一线，在第一线上形成下膜，使用感光材料在下膜上形成感光图案，形成用于通过蚀刻下部的第一线露出的接触孔 使用感光膜作为蚀刻的膜，通过灰化处理去除部分感光膜图案以暴露限定接触孔的下膜的边界，并且形成通过接触孔连接到第一线的第二线。