公开(公告)号：US5827907A

公开(公告)日：1998-10-27

申请号：US114419

申请日：1993-08-30

申请人： Jeffrey Thomas Gotro ,  Jeffrey Curtis Hedrick ,  Konstantinos Papathomas ,  Niranjan Mohanlal Patel ,  Alfred Viehbeck ,  William Joseph

发明人： Jeffrey Thomas Gotro ,  Jeffrey Curtis Hedrick ,  Konstantinos Papathomas ,  Niranjan Mohanlal Patel ,  Alfred Viehbeck ,  William Joseph

IPC分类号： C08L27/12 ,  C08G59/30 ,  C08L63/00 ,  C08L71/00 ,  C08L71/08 ,  C08L71/10 ,  C08L87/00 ,  C08L101/00 ,  C08L101/02 ,  H05K1/03 ,  C08K9/00 ,  C08F283/00 ,  C08G65/48

CPC分类号： C08L71/00 ,  C08G59/30 ,  C08L63/00 ,  H05K1/034 ,  Y10S525/905 ,  Y10S525/906

摘要： A composition having enhanced fracture resistance comprising a heat curable reaction product of a fluorine-containing thermoset material and a fluorine-containing homopolymer, wherein the cured reaction product comprises the thermoset material having a plurality of discrete phases of said fluorine-containing homopolymer dispersed therein, the homopolymer phases being in the range of micron to submicron size.

摘要翻译： 含有含氟热固性材料和含氟均聚物的热固化反应产物的具有增强的抗断裂性的组合物，其中所述固化反应产物包含分散有所述含氟均聚物的多个离散相的热固性材料， 均聚物相在微米至亚微米的范围内。

公开(公告)号：US06225373B1

公开(公告)日：2001-05-01

申请号：US08669577

申请日：1996-06-24

申请人： Jeffrey Thomas Gotro ,  Jeffrey Curtis Hedrick ,  Konstantinos Papathomas ,  Niranjan Mohanlal Patel ,  Alfred Viehbeck ,  William Joseph

发明人： Jeffrey Thomas Gotro ,  Jeffrey Curtis Hedrick ,  Konstantinos Papathomas ,  Niranjan Mohanlal Patel ,  Alfred Viehbeck ,  William Joseph

IPC分类号： C08K910

CPC分类号： C08L71/00 ,  C08G59/30 ,  C08L63/00 ,  H05K1/034 ,  Y10S525/905 ,  Y10S525/906 ,  C08L2666/02

摘要： A composition comprising a thermoset resin which may or may not contain fluorine, bromine or both and containing at least one bromine-containing homo- or multicomponent thermoplastic polymer modifier optionally containing a different halogen which is soluble in the thermoset. Said thermoplastic polymer undergoes an in-situ phase separation process during cure to form a microphase-separated multiphase thermoset material.

摘要翻译： 包含热固性树脂的组合物，其可以含有或不包含氟，溴或两者并含有至少一种含溴的均聚或多组分热塑性聚合物改性剂，其任选地含有可溶于热固性树脂的不同卤素。 所述热塑性聚合物在固化期间经历原位相分离过程以形成微相分离的多相热固性材料。

公开(公告)号：US5443865A

公开(公告)日：1995-08-22

申请号：US859594

申请日：1992-03-23

申请人： Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C23C18/18 ,  C23C18/20 ,  B05D1/00

CPC分类号： C23C18/1844 ,  C23C18/1893 ,  C23C18/2086 ,  C23C18/30

摘要： Substrates are activated for subsequent metallization by contacting the substrate with a electrolyte in which reducing agents which are electrochemically generated in the electrolyte. The reducing agents are sorbed by the substrate which is contacted with a seeding medium to dispose on the substrate seed, preferably palladium seed for subsequent electroless and electrolytic metallization.

摘要翻译： 通过使基底与电解质接触而将底物活化用于随后的金属化，其中在电解质中电化学产生还原剂。 还原剂被底物吸附，其与接种介质接触以配置在底物种子上，优选钯种子用于随后的无电解和电解金属化。

公开(公告)号：US5135779A

公开(公告)日：1992-08-04

申请号：US705556

申请日：1991-05-24

申请人： Alfred Viehbeck ,  Stephen L. Buchwalter ,  Martin J. Goldberg ,  Caroline A. Kovac ,  Stephen L. Tisdale

发明人： Alfred Viehbeck ,  Stephen L. Buchwalter ,  Martin J. Goldberg ,  Caroline A. Kovac ,  Stephen L. Tisdale

IPC分类号： C23C18/16 ,  C23C18/28 ,  H05K3/38

CPC分类号： H05K3/381 ,  C23C18/1608 ,  C23C18/2086 ,  C23C18/30 ,  C23C18/31

摘要： Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

摘要翻译： 某些有机聚合材料能够可逆地接受或捐赠来自还原剂的电子。 聚合物中的氧化还原位点接受电子，结果发生聚合物的性质变化。 该改变可用于改性或蚀刻聚合物材料。 可以通过在受控的深度将金属种子并入材料中来修饰材料。 种子通过金属阳离子与聚合物中的氧化还原位点的相互作用而引入，这导致阳离子还原形成中性金属种子。 随后将含有种子的聚合材料暴露于无电镀浴中，导致具有对聚合物材料具有良好粘附性的所需特性的金属的进一步沉积。 聚合物材料的蚀刻可以作为聚合物在非质子传递溶剂中当其氧化还原位点已经接受电子时的溶解度增加的结果进行。 增加的溶解度允许在已经还原的聚合物材料的某些区域中蚀刻开口，留下其它区域不变。

公开(公告)号：US5541567A

公开(公告)日：1996-07-30

申请号：US323554

申请日：1994-10-17

申请人： Keith E. Fogel ,  Jeffrey C. Hedrick ,  David A. Lewis ,  Eva E. Simonyi ,  Alfred Viehbeck ,  Stanley J. Whitehair

发明人： Keith E. Fogel ,  Jeffrey C. Hedrick ,  David A. Lewis ,  Eva E. Simonyi ,  Alfred Viehbeck ,  Stanley J. Whitehair

IPC分类号： H01F17/00 ,  H05K1/05 ,  H05K3/40 ,  H05K3/44 ,  H01F5/00 ,  H05K1/16

CPC分类号： H05K3/445 ,  H01F17/0006 ,  H05K1/056 ,  H05K2201/09636 ,  H05K2201/09881 ,  H05K2201/10416 ,  H05K3/4046

摘要： Structures are described having vias with more than one electrical conductor at least one of which is a solid conductor which is formed by inserting the wire into the via in a substrate wherein the wire is attached to an electrically conductive plate which is spaced apart from the substrate by a spacer which leave a space between the substrate and plate. The space is filled with a dielectric material. The space with via between the conductor and via sidewall is filled with a dielectric material. The via is used for making transformers and inductors wherein one of the via conductors is used for inner windings and another of the via conductors is used for outer windings.

摘要翻译： 描述了具有多于一个电导体的通孔的结构，其中至少一个电导体是通过将电线插入基板中的通孔而形成的实心导体，其中导线附接到与基板间隔开的导电板 通过在基板和板之间留下空隙的间隔件。 该空间填充有电介质材料。 在导体和通孔侧壁之间具有通孔的空间填充有电介质材料。 通孔用于制造变压器和电感器，其中通孔导体之一用于内部绕组，另一个通孔导体用于外部绕组。

公开(公告)号：US5462628A

公开(公告)日：1995-10-31

申请号：US232417

申请日：1994-04-25

申请人： Alfred Viehbeck ,  Martin Goldberg ,  Stephen L. Tisdale ,  Stephen L. Buchwalter ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Linda C. Matthew

发明人： Alfred Viehbeck ,  Martin Goldberg ,  Stephen L. Tisdale ,  Stephen L. Buchwalter ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Linda C. Matthew

IPC分类号： C23C18/20 ,  C08J5/12 ,  C08J7/00 ,  C23C18/16 ,  C23C18/28 ,  H05K3/38 ,  B32B31/00

CPC分类号： C23C18/1608 ,  C23C18/166 ,  C23C18/2086 ,  C23C18/28 ,  C23C18/30 ,  H05K3/381 ,  Y10S525/903

摘要： Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

摘要翻译： 某些有机聚合材料能够可逆地接受或捐赠来自还原剂的电子。 聚合物中的氧化还原位点接受电子，结果发生聚合物的性质变化。 该改变可用于改性或蚀刻聚合物材料。 可以通过在受控的深度将金属种子并入材料中来修饰材料。 种子通过金属阳离子与聚合物中的氧化还原位点的相互作用而引入，这导致阳离子还原形成中性金属种子。 随后将含有种子的聚合材料暴露于无电镀浴中，导致具有对聚合物材料具有良好粘附性的所需特性的金属的进一步沉积。 聚合物材料的蚀刻可以作为聚合物在非质子传递溶剂中当其氧化还原位点已经接受电子时的溶解度增加的结果进行。 增加的溶解度允许在已经还原的聚合物材料的某些区域中蚀刻开口，留下其它区域不变。

公开(公告)号：US5374454A

公开(公告)日：1994-12-20

申请号：US13652

申请日：1993-02-04

申请人： Harry R. Bickford ,  Peter J. Duke ,  Elizabeth Foster ,  Martin J. Goldberg ,  Voya R. Markovich ,  Linda C. Matthew ,  Donald G. McBride ,  Terrence R. O'Toole ,  Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Harry R. Bickford ,  Peter J. Duke ,  Elizabeth Foster ,  Martin J. Goldberg ,  Voya R. Markovich ,  Linda C. Matthew ,  Donald G. McBride ,  Terrence R. O'Toole ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C08J3/24 ,  C23C18/20 ,  C23C18/28 ,  C25D5/56 ,  H05K1/03 ,  H05K3/18 ,  H05K3/38 ,  H05K3/42 ,  B05D1/00

CPC分类号： H05K3/422 ,  C23C18/208 ,  C23C18/2093 ,  C23C18/30 ,  C25D5/56 ,  H05K3/381 ,  H05K1/034 ,  H05K3/181 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/24322 ,  Y10T428/24339 ,  Y10T428/24802 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31678

摘要： A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.

摘要翻译： 将卤化聚合物材料暴露于还原剂和/或电解质和施加的电压以使得能够被金属化并被蚀刻的暴露部分。 暴露部分也可以被掺杂从而在其中诱导电导率。 此外，提供了含有独立卤代聚合物层和在其上的导电图案的新结构。

公开(公告)号：US5242713A

公开(公告)日：1993-09-07

申请号：US290486

申请日：1988-12-23

申请人： Alfred Viehbeck ,  Stephen L. Buchwalter ,  William A. Donson ,  John J. Glenning ,  Martin J. Goldberg ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Linda C. Matthew ,  Walter P. Pawlowski ,  Mark J. Schadt ,  Michael R. Scheuermann ,  Stephen L. Tisdale

发明人： Alfred Viehbeck ,  Stephen L. Buchwalter ,  William A. Donson ,  John J. Glenning ,  Martin J. Goldberg ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Linda C. Matthew ,  Walter P. Pawlowski ,  Mark J. Schadt ,  Michael R. Scheuermann ,  Stephen L. Tisdale

IPC分类号： C23C18/20 ,  C08J5/12 ,  C08J7/00 ,  C23C18/16 ,  C23C18/28 ,  H05K3/38

CPC分类号： C23C18/1608 ,  C23C18/166 ,  C23C18/2086 ,  C23C18/28 ,  C23C18/30 ,  H05K3/381 ,  Y10S525/903

摘要： Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

公开(公告)号：US5536921A

公开(公告)日：1996-07-16

申请号：US548262

申请日：1995-10-25

申请人： Jeffrey C. Hedrick ,  David A. Lewis ,  Jane M. Shaw ,  Alfred Viehbeck ,  Stanley J. Whitehair

发明人： Jeffrey C. Hedrick ,  David A. Lewis ,  Jane M. Shaw ,  Alfred Viehbeck ,  Stanley J. Whitehair

IPC分类号： H05B6/80 ,  H05B6/62 ,  H05B6/78

CPC分类号： H05B6/788

摘要： A microwave processing system is provided wherein the material to be processed is in the form of a web type quantity configuration with a thickness that is small in relation to the wavelength of a particular microwave frequency. The material is passed through the field associated with a plurality of microwave standing waves of the particular frequency, each adjacent standing wave being offset 1/4 wavelength along the direction of movement of the web. A carrier gas removes volatile solvents from the material surfaces. Control is provided for the interrelationship of temperature, rate of movement, flow of carrier gas, and microwave power.

摘要翻译： 提供了一种微波处理系统，其中待处理的材料是相对于特定微波频率的波长具有较小厚度的幅材类型数量构型的形式。 材料通过与特定频率的多个微波驻波相关联的场，每个相邻驻波沿着幅材的移动方向偏移1/4波长。 载气从材料表面除去挥发性溶剂。 提供温度，运动速率，载气流量和微波功率的相互关系的控制。

公开(公告)号：US06268238B1

公开(公告)日：2001-07-31

申请号：US09111507

申请日：1998-07-08

申请人： Evan Ezra Davidson ,  David Andrew Lewis ,  Jane Margaret Shaw ,  Alfred Viehbeck ,  Janusz Stanislaw Wilczynski

发明人： Evan Ezra Davidson ,  David Andrew Lewis ,  Jane Margaret Shaw ,  Alfred Viehbeck ,  Janusz Stanislaw Wilczynski

IPC分类号： H01L2144

CPC分类号： H05K3/4641 ,  H01L25/0652 ,  H01L2224/48091 ,  H01L2924/01014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/19041 ,  H05K1/053 ,  H05K1/056 ,  H05K1/145 ,  H05K3/3436 ,  H05K3/4608 ,  H05K2201/068 ,  H05K2201/09309 ,  H05K2201/09718 ,  Y10S428/901 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926 ,  H01L2924/00014 ,  H01L2924/00

摘要： A three dimensional packaging architecture for ultimate high performance computers and methods for fabricating thereof are described. The packgage allows very dense packaging of multiple integrated circuit chips for minimum communication distances and maximum clock speeds of the computer. The packaging structure is formed from a plurality of subassemblies. Each subassembly is formed from a substrate which has on at least one side thereof at least one integrated circuit device. Between adjacent subassemblies there is disposed a second substrate. There are electrical interconnection means to electrically interconnect contact locations on the subassembly to contact locations on the second substrate. The electrical interconnection means can be solder mounds, wire bonds and the like. The first substrate provides electrical signal intercommunication between the electronic devices and each subassembly. The second substrate provides ground and power distribution to the plurality of subassemblies. Optionally, the outer surfaces of the structure that can be disposed a cube of memory chips.

摘要翻译： 描述了用于最终高性能计算机的三维封装架构及其制造方法。 该包装允许非常密集的多个集成电路芯片的封装，以实现计算机的最小通信距离和最大时钟速度。 包装结构由多个子组件形成。 每个子组件由至少一个侧面上至少有一个集成电路器件的衬底形成。 在相邻的子组件之间设置有第二衬底。 存在用于将子组件上的接触位置电互连到第二基板上的接触位置的电互连装置。 电互连装置可以是焊锡槽，引线接合等。 第一基板在电子设备和每个子组件之间提供电信号互通。 第二基板提供对多个子组件的接地和功率分配。 可选地，结构的外表面可以设置成存储芯片的立方体。