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公开(公告)号:US4992152A
公开(公告)日:1991-02-12
申请号:US504362
申请日:1990-04-04
申请人: Madhav Mehra , Tonya D. Binga
发明人: Madhav Mehra , Tonya D. Binga
IPC分类号: C23C14/06 , C23C14/16 , C23C14/58 , H01L21/768 , H01L23/532
CPC分类号: C23C14/5806 , C23C14/0682 , C23C14/16 , C23C14/58 , H01L21/76886 , H01L23/53223 , H01L2924/0002 , Y10S438/937
摘要: A method of reducing hillocks in an aluminum layer sputtered onto a substrate includes depositing a layer of WSi.sub.2 on the aluminum layer having a thickness of between 1500-2500 .ANG. and then sintering these bilayers.
摘要翻译: 一种减少溅射到基底上的铝层中的小丘的方法包括在厚度为1500-2500之间的铝层上沉积一层WSi2,然后烧结这些双层。