公开(公告)号：US5510631A

公开(公告)日：1996-04-23

申请号：US289258

申请日：1994-08-11

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/78 ,  H01L29/786 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10 ,  H01L31/20 ,  H01L31/0312 ,  H01L29/76 ,  H01L31/06

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/931

摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 .ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

摘要翻译： 非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔 不超过1×1019 cm-3。

公开(公告)号：US5401330A

公开(公告)日：1995-03-28

申请号：US275274

申请日：1994-07-15

申请人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

发明人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01L31/075

CPC分类号： H01L31/204 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention aims to provide a photovoltaic element which can maintain high initial characteristics over long term usage even under severe environments, and can be mass-produced with high yield.A photovoltaic element in which a light reflecting layer, a light reflection multiplying layer, an n-type layer, an i-type layer, and a p-type layer composed of a non-single crystal semiconductor material comprising at least silicon, and a transparent electrode are successively formed on a conductive substrate, characterized in that said light reflecting layer comprises silver or copper atoms as the main constituent and further contains at least one of oxygen, nitrogen, and carbon.Also, in another embodiment, this photovoltaic element is characterized in that said light reflecting layer comprises silver as the main constituent, and further contains lead, lead and gold, or lead, gold, and a first transition group metal in an amount of 2 to 100 ppm.

摘要翻译： 本发明的目的在于提供即使在恶劣的环境下长期使用也能够维持高的初始特性的光电元件，能够大批量生产。 一种光电元件，其中包括至少包含硅的非单晶半导体材料构成的光反射层，光反射倍增层，n型层，i型层和p型层，以及 透明电极依次形成在导电性基板上，其特征在于，所述光反射层包含银或铜原子作为主要成分，并且还含有氧，氮和碳中的至少一种。 此外，在另一个实施方案中，该光电元件的特征在于，所述光反射层包含银作为主要成分，并且还含有铅，铅和金，或铅，金和第一过渡族金属，其量为2至 100 ppm。

公开(公告)号：US4981766A

公开(公告)日：1991-01-01

申请号：US403396

申请日：1989-09-06

申请人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

发明人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

IPC分类号： G03G5/082

CPC分类号： G03G5/08214

摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.

公开(公告)号：US6107116A

公开(公告)日：2000-08-22

申请号：US134929

申请日：1998-08-17

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  C23C14/34 ,  C23C14/08

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548

摘要： A photovoltaic element is formed by providing a substrate under vacuum; introducing a sputter gas and applying RF power to generate a plasma and provide a photovoltaic element having a substrate, a zinc oxide layer containing fluorine on the substrate, wherein a fluorine-containing zinc oxide layer is employed as a target.

摘要翻译： 通过在真空下提供衬底形成光电元件; 引入溅射气体并施加RF功率以产生等离子体，并提供具有衬底的光电元件，在衬底上含有氟的氧化锌层，其中使用含氟氧化锌层作为靶。

公开(公告)号：US5599403A

公开(公告)日：1997-02-04

申请号：US489372

申请日：1995-06-12

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L27/00 ,  H01L31/036 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/10 ,  H01L31/105 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0368

CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1055 ,  H01L31/1812 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

摘要翻译： 本发明提供光电转换元件，其中提高了长波长灵敏度，填充因子和光电转换效率。 为了提供光劣化降低的光电转换元件，提高了场耐久性，提高了温度特性，由含有氢的非晶硅型半导体构成的p层，由含有氢的非晶硅锗型半导体构成的i层 氢并且还包括微晶锗，并且由含有氢的非晶硅型半导体构成的n层层叠在基板上，所述i层通过微波等离子体CVD在400〜600℃的基板温度下形成， 所述微晶锗的粒径为50-500埃。 此外，微晶锗的含量在层厚度方向上变化。

公开(公告)号：US5362684A

公开(公告)日：1994-11-08

申请号：US840537

申请日：1992-02-25

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/78 ,  H01L29/786 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10 ,  H01L31/20

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/931

摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5.ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

摘要翻译： 非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔 不超过1×1019 cm-3。

公开(公告)号：US5281541A

公开(公告)日：1994-01-25

申请号：US755439

申请日：1991-09-05

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H01L21/306

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： A method for repairing a defective semiconductor device, the defective semiconductor device including a semiconductor thin film and a conductive thin film, disposed in the named order, on a conductive surface of a substrate, such that the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion. The method includes the steps of applying desired a voltage through an electrode positioned above a surface of the defective semiconductor device, and moving the electrode along the surface of the defective semiconductor device while maintaining a distance between the electrode and the conductive thin film sufficient to allow a discharge to occur when the electrode is above the electrically short-circuited portion, such that the discharge modifies a region of the conductive thin film which is in electrical contact with the conductive surface of the substrate, to establish an electrically noncontacted state between the conductive thin film and the conductive surface of the substrate.

摘要翻译： 一种用于修复有缺陷的半导体器件的方法，所述有缺陷的半导体器件包括半导体薄膜和导电薄膜，其以所述的顺序设置在衬底的导电表面上，使得导电薄膜和导电薄膜的导电表面 衬底在半导体薄膜中出现的针孔处电短路以形成电短路部分。 该方法包括以下步骤：通过位于缺陷半导体器件的表面上方的电极施加所需的电压，并且沿着有缺陷的半导体器件的表面移动电极，同时保持电极和导电薄膜之间的距离足以允许 当电极在电气短路部分之上时，发生放电，使得放电改变与衬底的导电表面电接触的导电薄膜的区域，以在导电之间建立电非接触状态 薄膜和基板的导电表面。

公开(公告)号：US4906543A

公开(公告)日：1990-03-06

申请号：US184872

申请日：1988-04-21

申请人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

发明人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

IPC分类号： G03G5/082

CPC分类号： G03G5/08228

摘要： There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X), and containing at least either of germanium atoms or tin atoms in a layer region in contact with said lower layer. The light receiving member for electrophotography exhibits outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments.

公开(公告)号：US06472248B2

公开(公告)日：2002-10-29

申请号：US09758345

申请日：2001-01-12

申请人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

发明人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

IPC分类号： H01L2100

CPC分类号： H01L31/03685 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02675 ,  H01L31/028 ,  H01L31/03926 ,  H01L31/048 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

摘要翻译： 一种具有叠层结构的光电元件，包括不含结晶相的第一半导体层，含有近似球形微晶相的第二半导体层，以及包含柱状微晶相的第三半导体层，该第三半导体层依次层叠，其中所述 所述第三半导体层侧的第二半导体层的平均尺寸大于所述第二半导体层在所述第一半导体层一侧的所述球形微晶相的平均尺寸。

公开(公告)号：US06215061B1

公开(公告)日：2001-04-10

申请号：US09250246

申请日：1999-02-16

申请人： Toshimitsu Kariya

发明人： Toshimitsu Kariya

IPC分类号： H01L3100

CPC分类号： H01L31/075 ,  H01L31/02363 ,  H01L31/035227 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoconductive thin film formed on a substrate and having at least hydrogen and crystal grains of silicon, which film has an Urbach energy Eu of 60 meV or below as measured by the constant photocurrent method. This film provides a photoconductive thin film free of light degradation and having superior photoconductivity, and provides a photovoltaic device having superior temperature characteristics and long-term stability.

摘要翻译： 形成在基板上的至少具有硅和硅晶粒的光电导薄膜，该膜通过恒定光电流法测得的具有60meV或更低的Urbach能量Eu。 该膜提供无光劣化并且具有优异的光电导性的光电导薄膜，并提供具有优异的温度特性和长期稳定性的光电器件。