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公开(公告)号:US20060219175A1
公开(公告)日:2006-10-05
申请号:US11424723
申请日:2006-06-16
申请人: Sohyun Park , Wen Zhu , Tzu-Fang Huang , Li-Qun Xia , Hichem M'Saad
发明人: Sohyun Park , Wen Zhu , Tzu-Fang Huang , Li-Qun Xia , Hichem M'Saad
IPC分类号: C23C16/00
CPC分类号: H01L21/02126 , C23C16/4404 , H01L21/02211 , H01L21/02274 , H01L21/31633 , H01L21/76829 , Y10S438/913
摘要: A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.
摘要翻译: 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面,所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室,并且从室内的衬底上沉积低介电常数层,所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体,其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。