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公开(公告)号：US5573884A
公开(公告)日：1996-11-12
申请号：US471156
申请日：1995-06-06
IPC分类号： G03G5/082
CPC分类号： G03G5/08221 , G03G5/08214 , G03G5/08235 , G03G5/08292 , Y10S428/913 , Y10T428/24942 , Y10T428/265
摘要： An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
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22.发明授权
公开(公告)号：US4557990A
公开(公告)日：1985-12-10
申请号：US565191
申请日：1983-12-23
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
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23.发明授权
公开(公告)号：US4451547A
公开(公告)日：1984-05-29
申请号：US214045
申请日：1980-12-08
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
摘要翻译： 使用含有H，优选10-40原子％H的非晶硅层作为电子照相感光构件的光电导层。
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公开(公告)号：US5753936A
公开(公告)日：1998-05-19
申请号：US479856
申请日：1995-06-07
CPC分类号： G03G5/08221 , G03G5/08214 , G03G5/08235 , G03G5/08292 , Y10S428/913 , Y10T428/24942 , Y10T428/265
摘要： An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译： 用于电摄影的图像形成构件具有包含由硅和/或锗作为基质的氢化非晶半导体和基质中包含的至少一种化学改性剂如碳，氮和氧的光电导层。
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公开(公告)号：US5585149A
公开(公告)日：1996-12-17
申请号：US448123
申请日：1995-05-23
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20 , B05D3/06 , G03G5/00
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic % H, which is used as a photoconductive layer for electrophotographic photosensitive member, is formed by plasma CVD using a silane gas of a higher than monosilane.
摘要翻译： 通过使用高于甲硅烷的硅烷气体的等离子体CVD形成含有H，优选10-40原子％H的非晶硅层，其用作电子照相感光构件的光电导层。
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公开(公告)号：US4670369A
公开(公告)日：1987-06-02
申请号：US872935
申请日：1986-06-11
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
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27.发明授权Electrophotographic image forming member having hydrogenated amorphous photoconductive layer including carbon 失效具有包含碳的氢化非晶光电导层的电子照相图像形成部件
公开(公告)号：US4664998A
公开(公告)日：1987-05-12
申请号：US790155
申请日：1985-10-22
CPC分类号： G03G5/08235 , G03G5/08221 , G03G5/08292
摘要： An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译： 用于电摄影的图像形成部件具有光电导层，该光电导层包括由硅和/或锗作为基质构成的氢化非晶半导体和基质中所含的至少一种化学改性剂，例如碳，氮和氧。
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28.发明授权
公开(公告)号：US4552824A
公开(公告)日：1985-11-12
申请号：US695428
申请日：1985-01-28
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
摘要翻译： 使用含有H，优选10-40原子％H的非晶硅层作为电子照相感光构件的光电导层。
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公开(公告)号：US4461819A
公开(公告)日：1984-07-24
申请号：US269846
申请日：1981-06-03
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
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公开(公告)号：US5308996A
公开(公告)日：1994-05-03
申请号：US82908
申请日：1993-06-29
IPC分类号： H01L29/786 , H01L31/10 , H01L27/14
CPC分类号： H01L29/78609
摘要： A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.
摘要翻译： TFT器件具有绝缘基板，形成在绝缘基板上的半导体层，形成在半导体层上的一对相对电极和形成在半导体层上的绝缘膜之间的栅电极，其中掺杂有 在半导体层和绝缘层之间的界面附近的半导体层中形成选自属于元素周期表V族的原子的至少一种杂质。
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