公开(公告)号：US08818220B2

公开(公告)日：2014-08-26

申请号：US13195540

申请日：2011-08-01

申请人： Suguru Nakaso ,  Yuka Ito ,  Makoto Furuki

发明人： Suguru Nakaso ,  Yuka Ito ,  Makoto Furuki

IPC分类号： G03G15/01 ,  G03G15/36

CPC分类号： G03G15/36 ,  G03G15/0189 ,  G03G2215/0129

摘要： An image forming apparatus includes a first image-forming material that contains a colored pigment and a second image-forming material that contains the colored pigment having a concentration lower than that of the first image-forming material, a first image forming unit that forms a code image representing encoded information on a recording medium using the second image-forming material, and a second image forming unit that forms a non-code image at a position other than the position of the code image on the recording medium using an image-forming material other than the second image-forming material.

摘要翻译： 图像形成装置包括含有着色颜料的第一图像形成材料和含有浓度低于第一图像形成材料的着色颜料的第二图像形成材料，第一图像形成单元形成 使用第二图像形成材料在记录介质上表示编码信息的代码图像，以及第二图像形成单元，其使用图像形成单元在除了图像的位置之外的位置处在记录介质上形成非代码图像 不同于第二图像形成材料的材料。

公开(公告)号：US08742568B2

公开(公告)日：2014-06-03

申请号：US13637296

申请日：2011-02-24

申请人： Masayoshi Kondo ,  Natsuki Makino ,  Daisuke Fujiwara ,  Yuka Ito

发明人： Masayoshi Kondo ,  Natsuki Makino ,  Daisuke Fujiwara ,  Yuka Ito

IPC分类号： H01L23/14 ,  H01L21/44

CPC分类号： H01L23/49816 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K3/285 ,  H05K2201/068 ,  H05K2201/09136 ,  H01L2924/00

摘要： A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.

摘要翻译： 电路板（1）在25℃至其玻璃化转变点的温度范围内，沿着基板表面的方向显示第一绝缘层（21）的平均热膨胀系数（A） 在3ppm /℃以上且30ppm /℃以下的温度范围内。另外，第二绝缘层（23）的沿着基板表面的方向的平均热膨胀系数（B）在 25℃至其玻璃化转变点相当于在25℃至其玻璃化转变点的温度范围内沿着衬底表面的方向上的第三绝缘层（25）的平均热膨胀系数（C） 。 （B）和（C）大于（A），（A）和（B）之间的差异以及（A）和（C）之间的差异等于或高于5ppm /℃。 至35ppm /℃以下

公开(公告)号：US20110270562A1

公开(公告)日：2011-11-03

申请号：US13064922

申请日：2011-04-26

申请人： Yuka Ito ,  Haruhiko Fujisawa

发明人： Yuka Ito ,  Haruhiko Fujisawa

IPC分类号： G06F19/00

CPC分类号： G01B11/25 ,  G01B9/02055 ,  G01B11/2518 ,  G01B21/20

摘要： According to one embodiment, a profile measuring apparatus comprises a profile measuring unit, a position acquiring unit, a profile calculating unit, a deflection detecting unit, and a controlling unit. The profile measuring unit has a projecting unit to project a pattern onto a measured object, and an imaging unit to image the pattern. The position acquiring unit acquires a position of the pattern on the measured object. The profile calculating unit calculates a profile of the measured object, based on image information from the imaging unit and position information from the position acquiring unit. The deflection detecting unit detects deflection of the projecting unit. The controlling unit executes active correction for the profile measuring unit and/or passive correction for the profile calculating unit, based on the deflection of the projecting unit detected by the deflection detecting unit.

摘要翻译： 根据一个实施例，轮廓测量装置包括轮廓测量单元，位置获取单元，轮廓计算单元，偏转检测单元和控制单元。 型材测量单元具有将图案投影到测量对象上的投影单元和用于对图案进行成像的成像单元。 位置获取单元获取所测量对象上的图案的位置。 轮廓计算单元基于来自成像单元的图像信息和来自位置获取单元的位置信息来计算测量对象的轮廓。 偏转检测单元检测投影单元的偏转。 基于由偏转检测单元检测到的投影单元的偏转，控制单元对轮廓测量单元执行主动校正和/或轮廓计算单元的无源校正。

公开(公告)号：US20130015582A1

公开(公告)日：2013-01-17

申请号：US13637296

申请日：2011-02-24

申请人： Masayoshi Kondo ,  Natsuki Makino ,  Daisuke Fujiwara ,  Yuka Ito

发明人： Masayoshi Kondo ,  Natsuki Makino ,  Daisuke Fujiwara ,  Yuka Ito

IPC分类号： H01L23/48 ,  H01L21/78

CPC分类号： H01L23/49816 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K3/285 ,  H05K2201/068 ,  H05K2201/09136 ,  H01L2924/00

摘要： A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.

摘要翻译： 电路板（1）在25℃至其玻璃化转变点的温度范围内，沿着基板表面的方向显示第一绝缘层（21）的平均热膨胀系数（A） 在3ppm /℃以上且30ppm /℃以下的温度范围内。另外，第二绝缘层（23）的沿着基板表面的方向的平均热膨胀系数（B）在 25℃至其玻璃化转变点相当于在25℃至其玻璃化转变点的温度范围内沿着衬底表面的方向上的第三绝缘层（25）的平均热膨胀系数（C） 。 （B）和（C）大于（A），（A）和（B）之间的差异以及（A）和（C）之间的差异等于或高于5ppm /℃。 至35ppm /℃以下

公开(公告)号：US09335160B2

公开(公告)日：2016-05-10

申请号：US13064922

申请日：2011-04-26

申请人： Yuka Ito ,  Haruhiko Fujisawa

发明人： Yuka Ito ,  Haruhiko Fujisawa

IPC分类号： G01B11/25 ,  G01B9/02 ,  G01B21/20

CPC分类号： G01B11/25 ,  G01B9/02055 ,  G01B11/2518 ,  G01B21/20

摘要： According to one embodiment, a profile measuring apparatus comprises a profile measuring unit, a position acquiring unit, a profile calculating unit, a deflection detecting unit, and a controlling unit. The profile measuring unit has a projecting unit to project a pattern onto a measured object, and an imaging unit to image the pattern. The position acquiring unit acquires a position of the profile measuring unit. The profile calculating unit calculates a profile of the measured object, based on image information from the imaging unit and position information from the position acquiring unit. The deflection detecting unit detects deflection of the projecting unit. The controlling unit executes active correction for the profile measuring unit and/or passive correction for the profile calculating unit, based on the deflection of the projecting unit detected by the deflection detecting unit.

摘要翻译： 根据一个实施例，轮廓测量装置包括轮廓测量单元，位置获取单元，轮廓计算单元，偏转检测单元和控制单元。 型材测量单元具有将图案投影到测量对象上的投影单元和用于对图案进行成像的成像单元。 位置获取单元获取轮廓测量单元的位置。 轮廓计算单元基于来自成像单元的图像信息和来自位置获取单元的位置信息来计算测量对象的轮廓。 偏转检测单元检测投影单元的偏转。 基于由偏转检测单元检测到的投影单元的偏转，控制单元对轮廓测量单元执行主动校正和/或轮廓计算单元的无源校正。

公开(公告)号：US20110308848A1

公开(公告)日：2011-12-22

申请号：US13148774

申请日：2010-02-08

申请人： Yuka Ito ,  Kenichi Kaneda ,  Yasuaki Mitsui ,  Iji Onozuka ,  Noriyuki Ohigashi ,  Hideki Hara

发明人： Yuka Ito ,  Kenichi Kaneda ,  Yasuaki Mitsui ,  Iji Onozuka ,  Noriyuki Ohigashi ,  Hideki Hara

IPC分类号： H05K1/18 ,  H05K3/00 ,  B32B3/00

CPC分类号： H05K3/045 ,  H05K3/107 ,  H05K3/281 ,  H05K3/421 ,  H05K3/465 ,  H05K2201/0209 ,  H05K2201/09509 ,  H05K2201/09563 ,  Y10T29/49124 ,  Y10T428/24355

摘要： Disclosed are a composite body, a method for producing the composite body and a semiconductor device, the composite body comprising a resin layer and a fine wiring and/or via hole being formed in the resin layer, having high adhesion and high reliability, and being capable of high frequencies. Also disclosed are a resin composition and a resin sheet, both of which can provide such a composite body.The composite body comprises a resin layer and an electroconductive layer, wherein a groove having a maximum width of 1 μm or more and 10 μm or less is on a surface of the resin layer; the electroconductive layer is inside the groove; and a surface of the resin layer being in contact with the electroconductive layer has an arithmetic average roughness (Ra) of 0.05 μm or more and 0.45 μm or less, and/or wherein the resin layer has a via hole having a diameter of 1 μm or more and 25 μm or less; the electroconductive layer is inside the via hole; and a surface of the resin layer of the inside of the via hole has an arithmetic average roughness (Ra) of 0.05 μm or more and 0.45 μm or less. The resin composition comprises an inorganic filler and a thermosetting resin, wherein the inorganic filler contains coarse particles having a diameter of more than 2 μm in an amount of 500 ppm or less. The resin sheet comprises a resin layer and a substrate, wherein the resin layer is on the substrate and comprises the resin composition.

摘要翻译： 公开了一种复合体，该复合体的制造方法以及半导体装置，该复合体包括树脂层和在该树脂层中形成的精细布线和/或通孔，具有高粘合性和高可靠性，并且 能够高频率。 还公开了树脂组合物和树脂片，两者都可以提供这种复合体。 复合体包括树脂层和导电层，其中在树脂层的表面上具有最大宽度为1μm以上且10μm以下的槽; 导电层在槽内; 并且与导电层接触的树脂层的表面的算术平均粗糙度（Ra）为0.05μm以上且0.45μm以下，和/或其中树脂层具有直径为1μm的通孔 以上且25μm以下; 导电层在通孔内; 通孔内侧的树脂层的表面的算术平均粗糙度（Ra）为0.05μm以上且0.45μm以下。 树脂组合物包含无机填料和热固性树脂，其中无机填料含有直径大于2μm的粗颗粒的量在500ppm以下。 树脂片包括树脂层和基材，其中树脂层在基材上并包含树脂组合物。

公开(公告)号：US6110584A

公开(公告)日：2000-08-29

申请号：US149863

申请日：1998-09-09

申请人： Ryoichi Hiratsuka ,  Yuka Ito ,  Kazuo Hoshi

发明人： Ryoichi Hiratsuka ,  Yuka Ito ,  Kazuo Hoshi

IPC分类号： G11B5/64 ,  G11B5/72

CPC分类号： G11B5/72 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having an excellent sliding durability, and including a magnetic layer of a metal magnetic thin film formed on a non-magnetic support body and a carbon protection film formed on the magnetic layer. Recording and/or reproduction is carried out by sliding a magnetic head. The carbon protection film shows, in a Raman spectrum obtained by Raman spectrum analysis using an argon ion laser having a wavelength of 514.5 nm, an intensity ratio A/B of 2 or above for a main peak intensity A appearing in the vicinity of wave number 1550 cm.sup.-1 with respect to a background intensity B.

摘要翻译： 具有优异的滑动耐久性的磁记录介质，并且包括形成在非磁性支撑体上的金属磁性薄膜的磁性层和形成在磁性层上的碳保护膜。 通过滑动磁头进行记录和/或再现。 碳保护膜在使用波长为514.5nm的氩离子激光器的拉曼光谱分析获得的拉曼光谱中，对于出现在波数附近的主峰强度A，强度比A / B为2以上 1550厘米-1相对于背景强度B.