公开(公告)号：US06482734B1

公开(公告)日：2002-11-19

申请号：US09233040

申请日：1999-01-20

申请人： Jae-Hee Ha ,  Hong Koo Baik ,  Sung-Man Lee

发明人： Jae-Hee Ha ,  Hong Koo Baik ,  Sung-Man Lee

IPC分类号： H01L214763

CPC分类号： H01L21/76864 ,  H01L21/28568 ,  H01L21/31604 ,  H01L21/76843 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insulating material on an insulating layer and in a contact hole, wherein the insulating layer being partially etched to form the contact hole, is formed on a semiconductor substrate; and annealing the diffusion barrier layer. Therefore, an object of the present invention is to provide a diffusion barrier layer for a semiconductor device, which is of an amorphous or microcrystalline state and thermodynamically stable even at a high temperature since an insulating material is bonded to a refractory metal material in the diffusion barrier layer.

摘要翻译： 本发明涉及一种用于半导体器件的扩散阻挡层及其制造方法。 根据本发明的扩散阻挡层通过在绝缘层和接触孔中形成包含难熔金属材料和绝缘材料的扩散阻挡层来制造，其中部分蚀刻以形成接触孔的绝缘层是 形成在半导体衬底上; 和退火扩散阻挡层。 因此，本发明的目的是提供一种半导体器件的扩散阻挡层，该扩散阻挡层具有非晶态或微晶态，并且即使在高温下也具有热力学稳定性，因为绝缘材料与扩散中的难熔金属材料结合 阻挡层。