公开(公告)号：US11121186B2

公开(公告)日：2021-09-14

申请号：US16730275

申请日：2019-12-30

Applicant: LG Display Co., Ltd.

Inventor： Jae-Hyeon Kim ,  Eun-Jung Park ,  Kwan-Soo Kim ,  Seok-Hyun Kim

IPC: H01L27/32 ,  H01L51/52

Abstract: Disclosed is a transparent display device which has improved transmittance and luminous uniformity according to wavelength. The transparent display device includes a capping structure. The capping structure is formed by stacking a high refractive index first capping layer having destructive interference properties and a low refractive index second capping layer.

公开(公告)号：US10862072B2

公开(公告)日：2020-12-08

申请号：US16402024

申请日：2019-05-02

Applicant: LG Display Co., Ltd.

Inventor： Eun-Jung Park ,  Kwan-Soo Kim ,  Seok-Hyun Kim

IPC: H01L51/52 ,  H01L27/32

Abstract: A display device enables transparent display at increased transparency and double-sided emission display, thereby being capable of improving aperture ratio during emission. The display device includes a transmission part having a configuration capable of selectively achieving a transmission function and a double-sided emission function.

公开(公告)号：US20180097052A1

公开(公告)日：2018-04-05

申请号：US15718158

申请日：2017-09-28

Applicant: LG Display Co., Ltd.

Inventor： Han-Byeol Seok ,  Eun-Jung Park ,  Seok-Hyun Kim

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/50

CPC classification number: H01L27/3248 ,  H01L27/322 ,  H01L27/3246 ,  H01L51/5004 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5203 ,  H01L51/5278 ,  H01L2251/5346

Abstract: An organic light-emitting device, including: an anode and a cathode opposite each other, a first stack and a second stack between the anode and the cathode, and a charge generation layer between the first stack and the second stack, the charge generation layer including an n-type charge generation layer and a p-type charge generation layer, wherein the p-type charge generation layer includes one first organic material, wherein the n-type charge generation layer includes a second organic material and an n-type dopant, wherein the n-type charge generation layer is divided into a first region contacting the first stack, a second region contacting the p-type charge generation layer, and a third region between the first region and the second region, and wherein a dopant content of the n-type dopant is stepwise increased in an order of: the first region, the third region, and the second region.