公开(公告)号：US5739546A

公开(公告)日：1998-04-14

申请号：US666646

申请日：1996-06-18

申请人： Mitsuhiro Saitou ,  Kouji Numazaki ,  Hiroyuki Ban

发明人： Mitsuhiro Saitou ,  Kouji Numazaki ,  Hiroyuki Ban

IPC分类号： H01L21/66 ,  H01L21/822 ,  H01L23/528 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10

CPC分类号： H01L22/32 ,  H01L23/5286 ,  H01L27/0218 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A semiconductor wafer, having a relatively wide power supply line and ground line, and which can also prevent short-circuiting between these lines. Multiple integrated circuit formation regions, whereon integrated circuits have been formed, are disposed on a semiconductor wafer. A silicon oxide film is formed on a silicon substrate, and a ground line conductor is formed on the silicon oxide film. This ground line conductor is extended over scribe lines. A layer insulation film composed of silicon oxide film is deposited on the silicon oxide film with the ground line conductor interposed therebetween, and a power supply line conductor is formed on the layer insulation film to overlap the ground line conductor. The power supply line conductor is extended over scribe lines. In the integrated circuit formation regions, a power supply pad and the power supply line conductor are electrically connected. A ground pad and the ground line conductor are also electrically connected.

摘要翻译： 具有相对宽的电源线和接地线的半导体晶片，并且还可以防止这些线之间的短路。 多个集成电路形成区域已经形成集成电路，被布置在半导体晶片上。 在硅衬底上形成氧化硅膜，在氧化硅膜上形成接地线导体。 该接地线导体在划线上延伸。 在氧化硅膜上沉积由氧化硅膜构成的层绝缘膜，其间插入有接地线导体，并且在该层绝缘膜上形成与该接地线导体重叠的电源线导体。 电源线导体在划线上延伸。 在集成电路形成区域中，电源焊盘和电源线导体电连接。 接地焊盘和接地线导体也电连接。

公开(公告)号：US5563486A

公开(公告)日：1996-10-08

申请号：US362933

申请日：1994-12-23

申请人： Tomohisa Yamamoto ,  Junji Hayakawa ,  Hiroyuki Ban ,  Tukasa Miyake ,  Masami Kataoka

发明人： Tomohisa Yamamoto ,  Junji Hayakawa ,  Hiroyuki Ban ,  Tukasa Miyake ,  Masami Kataoka

IPC分类号： H02P8/12 ,  G01C22/02 ,  H02P8/18 ,  H02P8/22 ,  H02P8/32 ,  H02P8/14 ,  G01C22/00

CPC分类号： H02P8/18 ,  G01C22/02 ,  H02P8/32

摘要： A driving circuit of a pulse motor for use in a vehicle odometer is provided. The driving circuit includes a pulse source for providing drive pulses, in sequence, to a plurality of phase coils of the pulse motor, and a wave-shaper for shaping leading and trailing edges of each of the drive pulses so as to vary at a given rate in plural steps for noiseless smooth rotation of the pulse motor.

摘要翻译： 提供了一种用于车辆里程表的脉冲电机的驱动电路。 驱动电路包括用于依次提供脉冲电动机的多个相位线圈的驱动脉冲的脉冲源和用于整形每个驱动脉冲的前沿和后沿的波形整形器，以便在给定的 以脉冲电机的无噪声平滑旋转的多个步骤。

公开(公告)号：US20100238632A1

公开(公告)日：2010-09-23

申请号：US12801187

申请日：2010-05-27

申请人： Satoshi Shiraki ,  Akira Yamada ,  Hiroyuki Ban

发明人： Satoshi Shiraki ,  Akira Yamada ,  Hiroyuki Ban

IPC分类号： H05K7/20

CPC分类号： H05K7/1432 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/01046 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

摘要翻译： 负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。 输出功率器件和驱动IC安装在第一电极基板上。 在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

公开(公告)号：US20090127605A1

公开(公告)日：2009-05-21

申请号：US12010111

申请日：2008-01-22

申请人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

发明人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

IPC分类号： H01L29/66 ,  H01L21/66

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.

摘要翻译： 半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。 每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。 每个电阻元件包括设置在两侧的电阻垫。 每个电容元件包括设置在两侧的电容焊盘。 除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。 第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。 第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

公开(公告)号：US20060289461A1

公开(公告)日：2006-12-28

申请号：US11453028

申请日：2006-06-15

申请人： Akio Kojima ,  Hiroyuki Ban

发明人： Akio Kojima ,  Hiroyuki Ban

IPC分类号： H05B1/02

CPC分类号： G01K3/005 ,  G01K7/01

摘要： An overheat-sensing circuit includes a temperature-sensing circuit for outputting a temperature-sensing voltage, a reference voltage generation circuit for outputting a reference voltage, and a comparison circuit that compares the temperature-sensing voltage with the reference voltage and outputs an overheat-sensing signal based on a result of the comparison. The reference voltage generation circuit outputs the reference voltage in accordance with a power supply voltage when the power supply voltage is within a predetermined voltage range. In contrast, the reference voltage generation circuit generates a limited voltage based on the power supply voltage and outputs the reference voltage in accordance with the limited voltage when the power supply voltage is outside the predetermined voltage range. This approach reduces a variation in an overheat-sensing temperature at which the comparison circuit outputs the overheat-sensing signal.

摘要翻译： 过热检测电路包括用于输出温度感测电压的温度检测电路，用于输出参考电压的参考电压产生电路，以及将温度感测电压与参考电压进行比较的比较电路，并输出过热 - 基于比较结果的感测信号。 当电源电压在预定电压范围内时，参考电压产生电路根据电源电压输出参考电压。 相比之下，参考电压产生电路基于电源电压产生有限电压，并且当电源电压超出预定电压范围时，根据限制电压输出参考电压。 该方法减少了比较电路输出过热感测信号的过热感应温度的变化。

公开(公告)号：US20050206323A1

公开(公告)日：2005-09-22

申请号：US11053919

申请日：2005-02-10

申请人： Junji Hayakawa ,  Hiroyuki Ban ,  Jyunichi Nagata

发明人： Junji Hayakawa ,  Hiroyuki Ban ,  Jyunichi Nagata

IPC分类号： G05F1/56 ,  H02M3/155 ,  H02M3/158 ,  H05B37/02

CPC分类号： H02M3/158 ,  H02M2001/0045 ,  H02M2001/0048 ,  H02M2001/007 ,  Y02B70/1491

摘要： In a power supply apparatus, a switching circuit selectively applies one of an input voltage of a power converting circuit and an output voltage of the power converting circuit to a voltage reducing power supply circuit. When the input voltage is applied to the power converting circuit, the switching circuit selects this input voltage, so that the output voltage of the voltage reducing power supply circuit can quickly rise. Thereafter, when the output voltage of the power converting circuit exceeds this output voltage, the switching circuit selects the output voltage of the power converting circuit. As a result, a difference between the input voltage and the output voltage of the voltage reducing power supply circuit is decreased. Thus, a power loss is lowered and noise produced in the power converting circuit is suppressed.

摘要翻译： 在电源装置中，开关电路将功率转换电路的输入电压和电力转换电路的输出电压中的一个选择性地施加到降压电源电路。 当输入电压施加到功率转换电路时，开关电路选择该输入电压，使得降压电源电路的输出电压可以快速上升。 此后，当电力转换电路的输出电压超过该输出电压时，开关电路选择电力转换电路的输出电压。 结果，降压电源电路的输入电压和输出电压之间的差减小。 因此，功率损耗降低，功率转换电路产生的噪声被抑制。

公开(公告)号：US06768183B2

公开(公告)日：2004-07-27

申请号：US10125582

申请日：2002-04-19

申请人： Shigeki Takahashi ,  Satoshi Shiraki ,  Hiroaki Himi ,  Hiroyuki Ban ,  Osamu Seya

发明人： Shigeki Takahashi ,  Satoshi Shiraki ,  Hiroaki Himi ,  Hiroyuki Ban ,  Osamu Seya

IPC分类号： H01L2900

CPC分类号： H01L27/0826 ,  H01L27/0623

摘要： An NPN bipolar transistor and a PNP bipolar transistor are formed in a semiconductor substrate. The NPN bipolar transistor has a p type emitter region, a p type collector region and an n type base region and is formed in an NPN forming region. The PNP bipolar transistor has an n type emitter region, an n type collector region and a p type base region and is formed in a PNP forming region. Only one conductive type burying region is formed in at least one of the NPN forming region and the PNP forming region. A current that flows from the p type emitter region to the n type base region flows in the n type base region in a direction perpendicular to the substrate.

摘要翻译： 在半导体衬底中形成NPN双极晶体管和PNP双极晶体管。 NPN双极晶体管具有p型发射极区域，p型集电极区域和n型基极区域，并且形成在NPN形成区域中。 PNP双极晶体管具有n型发射极区域，n型集电极区域和p型基极区域，并且形成在PNP形成区域中。 在NPN形成区域和PNP形成区域的至少一个中仅形成一个导电型掩埋区域。 从p型发射极区域流向n型基极区域的电流在与基板垂直的方向上流入n型基极区域。

公开(公告)号：US6088207A

公开(公告)日：2000-07-11

申请号：US115835

申请日：1998-07-15

申请人： Akira Sugiura ,  Fukuo Ishikawa ,  Hiroyuki Ban

发明人： Akira Sugiura ,  Fukuo Ishikawa ,  Hiroyuki Ban

IPC分类号： H03K17/082 ,  H02H3/20

CPC分类号： H03K17/0826

摘要： An over-voltage protection apparatus includes a power feed line. A load has a given low impedance. A current supplying device operates for supplying a current to the load via the power feed line. A load drive device operates for controlling the supply of the current to the load by the current supplying device. An over-voltage detecting device operates for detecting an over-voltage at the power feed line. A discharge command device operates for, when the over-voltage at the power feed line is detected by the over-voltage detecting device, controlling the load drive device to enable a discharge current to flow from the power feed line into the load and thereby to remove the over-voltage from the power feed line through discharge. A current detecting device operates for detecting the discharge current. A discharge continuing device operates for continuing the discharge and the flow of the discharge current from the power feed line in cases where the discharge current detected by the current detecting device exceeds a predetermined reference level.

摘要翻译： 一种过电压保护装置包括馈电线。 负载具有给定的低阻抗。 电流供给装置用于经由供电线向负载供给电流。 负载驱动装置用于控制通过电流供应装置向负载​​供应电流。 过电压检测装置用于检测馈电线上的过电压。 放电指令装置工作时，当由过电压检测装置检测到馈电线上的过电压时，控制负载驱动装置使得放电电流能够从供电线流入负载，从而 通过放电去除馈电线上的过电压。 电流检测装置用于检测放电电流。 在由电流检测装置检测到的放电电流超过预定参考电平的情况下，放电继续装置用于继续放电和来自馈电线的放电电流的流动。

公开(公告)号：US6081040A

公开(公告)日：2000-06-27

申请号：US39340

申请日：1998-03-16

申请人： Shoichi Okuda ,  Mitsuhiro Saitou ,  Hiroyuki Ban

发明人： Shoichi Okuda ,  Mitsuhiro Saitou ,  Hiroyuki Ban

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L23/544 ,  H01L21/465

CPC分类号： H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002

摘要： An alignment mark for determining a position of a thin film resistor formed on a semiconductor chip. The alignment mark is disposed on a capacitor formation region of the semiconductor chip. Because aluminum wiring members of the semiconductor chip are not disposed adjacent to the alignment mark within the capacitor formation region, the alignment mark can be precisely recognized. As a result, the position of the thin film resistor can be also precisely determined.

摘要翻译： 用于确定形成在半导体芯片上的薄膜电阻器的位置的对准标记。 对准标记设置在半导体芯片的电容器形成区域上。 由于半导体芯片的铝布线构件不与电容器形成区域内的对准标记相邻配置，因此可以精确地识别对准标记。 结果，也可以精确地确定薄膜电阻器的位置。

公开(公告)号：US5999041A

公开(公告)日：1999-12-07

申请号：US857881

申请日：1997-05-16

申请人： Junichi Nagata ,  Junji Hayakawa ,  Hiroyuki Ban

发明人： Junichi Nagata ,  Junji Hayakawa ,  Hiroyuki Ban

IPC分类号： H03K17/082 ,  H03K17/08

CPC分类号： H03K17/0822

摘要： An output MOS transistor and a current-detecting MOS transistor are connected commonly at their drains and gates. A gate voltage is fed to the gates of these transistors via signal lines. When the voltage of an output terminal is increased in response to excessive load current, a current-mirror circuit consisting of first and second transistors pulls in current from the signal line to reduce the gate voltage. Thus, the output current of output MOS transistor is limited within a predetermined level. Furthermore, a diode, provided in the signal line, produces a voltage drop equivalent to the base-emitter voltage of first transistor. By the function of this diode, the gate-source voltage of output MOS transistor is equalized with the gate-source voltage of current-detecting MOS transistor. As a result, the same operating point can be set for the output transistor and the current-detecting transistor.

摘要翻译： 输出MOS晶体管和电流检测MOS晶体管通常连接在其漏极和栅极。 栅极电压通过信号线馈送到这些晶体管的栅极。 当输出端子的电压响应于过大的负载电流而增加时，由第一和第二晶体管组成的电流镜电路从信号线引出电流以降低栅极电压。 因此，输出MOS晶体管的输出电流被限制在预定的水平。 此外，设置在信号线中的二极管产生等效于第一晶体管的基极 - 发射极电压的电压降。 通过该二极管的功能，输出MOS晶体管的栅极 - 源极电压与电流检测MOS晶体管的栅极 - 源极电压相等。 结果，可以为输出晶体管和电流检测晶体管设置相同的工作点。