-
公开(公告)号：US20070000330A1
公开(公告)日：2007-01-04
申请号：US11516237
申请日：2006-09-06
申请人： Steven Tysoe , Mark D'Evelyn , Charles Becker , Abasifreke Ebong , Stephen Arthur , Steven LeBoeuf , Robert Wojnarowski , Samhita Dasgupta , Vinayak Tilak , Kanakasabapathi Subramanian , Jeffrey Fortin
发明人： Steven Tysoe , Mark D'Evelyn , Charles Becker , Abasifreke Ebong , Stephen Arthur , Steven LeBoeuf , Robert Wojnarowski , Samhita Dasgupta , Vinayak Tilak , Kanakasabapathi Subramanian , Jeffrey Fortin
IPC分类号： G01L7/00
CPC分类号： H01L21/31111
摘要： A pressure sensor is provided. The pressure sensor includes a multi-layer laminate comprising a substrate and a semiconductor layer, wherein the substrate comprises single crystal or quasi-single crystal aluminum oxide, and a portion of the substrate that is spaced from a peripheral edge is wet etched to form an inwardly facing sidewall that defines a volume; and a substrate to which the multi-layer laminate is secured. The volume is an enclosed volume further defined by a substrate surface.
摘要翻译： 提供压力传感器。 压力传感器包括多层层压体，其包括基底和半导体层，其中基底包括单晶或准单晶氧化铝，并且与周边边缘间隔开的部分基底被湿蚀刻以形成 限定体积的面向内的侧壁; 以及固定有多层层叠体的基板。 体积是由衬底表面进一步限定的封闭体积。
-
22.发明申请Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same 有权基于宽带隙半导体纳米结构的单片发光器件及其制造方法公开(公告)号：US20050082543A1
公开(公告)日：2005-04-21
申请号：US10686136
申请日：2003-10-15
申请人： Azar Alizadeh , Pradeep Sharma , Steven LeBoeuf , Suryaprakash Ganti , Mark D'Evelyn , Kenneth Conway , Peter Sandvik , Loucas Tsakalakos
发明人： Azar Alizadeh , Pradeep Sharma , Steven LeBoeuf , Suryaprakash Ganti , Mark D'Evelyn , Kenneth Conway , Peter Sandvik , Loucas Tsakalakos
CPC分类号： G02B6/1225 , B82Y20/00 , H01L33/24 , H01S5/1042 , H01S5/183 , H01S5/3412 , H01S5/423
摘要： The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.
摘要翻译： 本发明涉及一种用于制造宽带隙材料的低缺陷纳米结构和基于它们的光电子器件（例如发光源和激光器）的方法。 本发明利用纳米光刻定义的模板来形成在能量上不利于位错形成的宽带隙材料的纳米结构。 特别地，本发明提供了一种制造无磷的单片白光发光二极管和激光二极管的方法，可用于一般照明和其它应用。
-
公开(公告)号：US20060289386A1
公开(公告)日：2006-12-28
申请号：US11167719
申请日：2005-06-27
申请人： Steven Tysoe , Steven LeBoeuf , Mark D'Evelyn , Venkat Venkataramani , Vinayak Tilak , Jeffrey Fortin , Charles Becker , Stephen Arthur , Samhita Dasgupta , Kanakasabapathi Subramanian , Robert Wojnarowski , Abasifreke Ebong
发明人： Steven Tysoe , Steven LeBoeuf , Mark D'Evelyn , Venkat Venkataramani , Vinayak Tilak , Jeffrey Fortin , Charles Becker , Stephen Arthur , Samhita Dasgupta , Kanakasabapathi Subramanian , Robert Wojnarowski , Abasifreke Ebong
CPC分类号： H01L21/31111
摘要： An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.
摘要翻译： 提供了包括卤化盐的蚀刻剂，例如Cryolite（Na 3 AlF 6）或四氟硼酸钾（KBF 4 N 4）。 盐可以以足以蚀刻基材的量存在于蚀刻剂中，并且可以具有大于约200摄氏度的熔体温度。 湿蚀刻的方法可以包括使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述支撑层可以包括氧化铝; 或使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述蚀刻剂可以包括冰晶石（Na 3 AlF 6 N），四氟硼酸钾 （KBF 4）或两者; 并蚀刻所述支撑层的至少一部分。 该方法可以提供通过将结晶生长到氧化铝载体层上并通过湿蚀刻化学去除至少一部分载体层而制备的层压体。 提供了包括层压板的电子设备，光学设备或组合设备。
-
24.发明申请公开(公告)号：US20050029537A1
公开(公告)日：2005-02-10
申请号：US10932127
申请日：2004-09-01
申请人： Mark D'Evelyn , Nicole Evers , Kanin Chu
发明人： Mark D'Evelyn , Nicole Evers , Kanin Chu
IPC分类号： H01L31/0224 , H01L31/0304 , H01L31/108 , H01L33/00
CPC分类号： H01L31/0304 , H01L31/022408 , H01L31/108 , Y02E10/544 , Y02P70/521
摘要： A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104, 302) and, in some embodiments, the substrate (102, 202, 306). The invention includes photodetectors (100, 200, 300) having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers (104, 302) may comprise Ga1-x-yAlxInyN1-z-w PzAsw, or, preferably, Ga1-xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm−2. A method of making the photodetector (100, 200, 300) is also disclosed.
摘要翻译： 包括氮化镓衬底，设置在衬底（102,202,306）上的至少一个有源层（104,302）的光电探测器（100,200,300）和固定在衬底上的导电接触结构（106,210,308） 到有源层（104,302），并且在一些实施例中为衬底（102,202,306）。 本发明包括具有金属 - 半导体 - 金属结构，P-i-N结构和肖特基势垒结构的光电探测器（100,200,300）。 有源层（104,302）可以包括Ga1-x-yAlxInyN1-z-wPzAsw，或者优选地，Ga1-xAlxN。 氮化镓衬底包括单晶氮化镓晶片，并且具有小于约10 -5 cm -2的位错密度。 还公开了制造光电检测器（100,200,300）的方法。
-
公开(公告)号：US20120091465A1
公开(公告)日：2012-04-19
申请号：US13272981
申请日：2011-10-13
CPC分类号： H01L33/0075 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32 , H01S5/0206 , H01S5/32341
摘要： A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state.
摘要翻译： 具有半极性表面取向的衬底上的弛豫外延Al x In y Ga（1-x-y）N层包括在外延层的厚度部分中的多个失配位错，以将双轴应变减小到松弛状态。
-
公开(公告)号：US20120007102A1
公开(公告)日：2012-01-12
申请号：US13179346
申请日：2011-07-08
申请人： Daniel Feezell , Rajat Sharma , Arpan Chakraborty , Troy Anthony Trottier , Thomas Katona , Mark D'Evelyn
发明人： Daniel Feezell , Rajat Sharma , Arpan Chakraborty , Troy Anthony Trottier , Thomas Katona , Mark D'Evelyn
IPC分类号： H01L33/02
CPC分类号： H01L27/156 , H01L33/14
摘要： A light emitting device comprising a gallium and nitrogen containing substrate. The device also has an electrically isolating material grown between the substrate and an active region such that the light emitting device is operable at a voltage greater than 10V.
摘要翻译： 一种包含含镓和氮的衬底的发光器件。 该器件还具有在衬底和有源区之间生长的电隔离材料，使得发光器件可工作在大于10V的电压。
-
公开(公告)号：US20060096521A1
公开(公告)日：2006-05-11
申请号：US11300660
申请日：2005-12-12
申请人： Mark D'Evelyn , Thomas Anthony , Stephen Arthur , Lionel Levinson , John Lucek , Larry Rowland , Suresh Vagarali
发明人： Mark D'Evelyn , Thomas Anthony , Stephen Arthur , Lionel Levinson , John Lucek , Larry Rowland , Suresh Vagarali
IPC分类号： H01L21/322
CPC分类号： B01J3/065 , B01J3/062 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00 , Y10T117/1004 , Y10T117/1008
摘要： A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
摘要翻译： 通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。 将晶体和压力介质设置在高压电池中并放置在高压设备中，用于在足够高的压力和高温的反应条件下进行处理足够的时间以适应一个或多个去除缺陷或减轻单一应变的应变 水晶。
-
公开(公告)号：US08729559B2
公开(公告)日：2014-05-20
申请号：US13272981
申请日：2011-10-13
CPC分类号： H01L33/0075 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32 , H01S5/0206 , H01S5/32341
摘要： A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state.
摘要翻译： 具有半极性表面取向的衬底上的弛豫外延Al x In y Ga（1-x-y）N层包括在外延层的厚度部分中的多个失配位错，以将双轴应变减小到松弛状态。
-
-
-
-
-
-
-
搜索结果
28 条记录 (耗时 0.026 秒)