公开(公告)号：US08871429B2

公开(公告)日：2014-10-28

申请号：US13617781

申请日：2012-09-14

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/26 ,  C07C309/25 ,  C07C309/26 ,  C07D277/62 ,  G03F7/029 ,  C07D209/04 ,  G03F7/039 ,  G03F7/038 ,  C07D261/20 ,  C07D307/82

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

公开(公告)号：US08741545B2

公开(公告)日：2014-06-03

申请号：US13617623

申请日：2012-09-14

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/26 ,  C07C309/25 ,  C07C209/26 ,  C07D261/20

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

公开(公告)号：US20130017489A1

公开(公告)日：2013-01-17

申请号：US13614521

申请日：2012-09-13

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： C07D333/62 ,  G03F7/20 ,  C07D277/76 ,  G03F7/027

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

公开(公告)号：US20130011795A1

公开(公告)日：2013-01-10

申请号：US13617919

申请日：2012-09-14

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

公开(公告)号：US20130011793A1

公开(公告)日：2013-01-10

申请号：US13617743

申请日：2012-09-14

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

公开(公告)号：US20110183259A1

公开(公告)日：2011-07-28

申请号：US12692961

申请日：2010-01-25

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  C07D333/62 ,  G03F7/20

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

摘要翻译： 本发明涉及一种无氟光酸产生剂（PAG）和含有它的光致抗蚀剂组合物。 PAG的特征在于存在阳离子阳离子组分和含有一个或多个吸电子取代基的无氟稠环杂芳族磺酸盐阴离子组分。 PAG的阳离子阳离子成分优选为锍或碘鎓阳离子。 光致抗蚀剂组合物还含有酸敏感成像聚合物。 光致抗蚀剂组合物特别适用于使用193nm（ArF）光刻在半导体衬底上形成材料图案。

公开(公告)号：US20090181320A1

公开(公告)日：2009-07-16

申请号：US12015047

申请日：2008-01-16

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  C07D333/32 ,  G03F7/26

CPC分类号： C07D333/32 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/122 ,  Y10S430/123

摘要： Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free heteroaromatic sulfonate anionic component. The photoacid generators preferably contain an onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer. The compositions are especially useful for forming material patterns using 193 nm (ArF) imaging radiation.

摘要翻译： 含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。 光酸产生剂的特征在于存在无氟杂芳族磺酸盐阴离子组分。 光酸产生剂优选含有阳离子阳离子成分，更优选含有阳离子成分的锍。 光致抗蚀剂组合物优选含有酸敏感成像聚合物。 组合物对于使用193nm（ArF）成像辐射形成材料图案特别有用。

公开(公告)号：US08906591B2

公开(公告)日：2014-12-09

申请号：US13617743

申请日：2012-09-14

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/26 ,  C07C309/25 ,  C07C309/26 ,  C07D417/00 ,  G03F7/029 ,  C07D277/62 ,  C07D209/04 ,  G03F7/039 ,  C07D261/20 ,  G03F7/038 ,  C07D307/82

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

公开(公告)号：US08628910B2

公开(公告)日：2014-01-14

申请号：US13617919

申请日：2012-09-14

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/26 ,  C07C309/04 ,  C07C309/25 ,  C07C309/26

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

摘要翻译： 本发明涉及一种无氟光酸产生剂（PAG）和含有它的光致抗蚀剂组合物。 PAG的特征在于存在阳离子阳离子组分和含有一个或多个吸电子取代基的无氟稠环杂芳族磺酸盐阴离子组分。 PAG的阳离子阳离子成分优选为锍或碘鎓阳离子。 光致抗蚀剂组合物还含有酸敏感成像聚合物。 光致抗蚀剂组合物特别适用于使用193nm（ArF）光刻在半导体衬底上形成材料图案。

公开(公告)号：US08518630B2

公开(公告)日：2013-08-27

申请号：US13614521

申请日：2012-09-13

申请人： Sen Liu ,  Pushkara R. Varanasi

发明人： Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/029 ,  G03F7/26 ,  C07C309/04 ,  C07C309/25 ,  C07C309/39 ,  C07C309/40

CPC分类号： G03F7/004 ,  C07C309/25 ,  C07C309/26 ,  C07D209/04 ,  C07D261/20 ,  C07D277/62 ,  C07D307/82 ,  G03F7/0045 ,  G03F7/028 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

摘要翻译： 本发明涉及一种无氟光酸产生剂（PAG）和含有它的光致抗蚀剂组合物。 PAG的特征在于存在阳离子阳离子组分和含有一个或多个吸电子取代基的无氟稠环杂芳族磺酸盐阴离子组分。 PAG的阳离子阳离子成分优选为锍或碘鎓阳离子。 光致抗蚀剂组合物还含有酸敏感成像聚合物。 光致抗蚀剂组合物特别适用于使用193nm（ArF）光刻在半导体衬底上形成材料图案。