公开(公告)号：US08252699B2

公开(公告)日：2012-08-28

申请号：US12952024

申请日：2010-11-22

申请人： Anthony Konecni ,  Josephine Juhwei Liu ,  Deenesh Padhi ,  Bok Hoen Kim ,  William H. McClintock

发明人： Anthony Konecni ,  Josephine Juhwei Liu ,  Deenesh Padhi ,  Bok Hoen Kim ,  William H. McClintock

IPC分类号： H01L21/033

CPC分类号： H01L21/31144 ,  H01L21/02115 ,  H01L21/02274

摘要： A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels.

摘要翻译： 提供了一种在基板上形成无定形碳层的方法和装置。 具有高应力水平的无定形碳层的第一部分由具有高稀释比的烃前体形成，并且包括任选的胺前体以增加应力升高的氮。 通过降低烃前体的稀释比例和降低或除去胺气体，在第一部分上形成具有低应力水平的第二部分无定形碳层。 可以调节压力，温度和RF功率输入，而不是或除了前体流速，并且不同的前体可用于不同的应力水平。

公开(公告)号：US20120208374A1

公开(公告)日：2012-08-16

申请号：US13455916

申请日：2012-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/312

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施方案中，提供了形成复合无定形碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中， 用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

公开(公告)号：US20090197086A1

公开(公告)日：2009-08-06

申请号：US12025615

申请日：2008-02-04

申请人： Sudha Rathi ,  Eui Kyoon Kim ,  Bok Hoen Kim ,  Martin Jay Seamons ,  Francimar Campana Schmitt

发明人： Sudha Rathi ,  Eui Kyoon Kim ,  Bok Hoen Kim ,  Martin Jay Seamons ,  Francimar Campana Schmitt

IPC分类号： G03F7/00 ,  B05D1/36 ,  H05H1/24 ,  B32B9/00

CPC分类号： G03F7/091 ,  G03F7/11 ,  Y10T428/30

摘要： A method and structure for the fabrication of semiconductor devices having feature sizes in the range of 90 nm and smaller is provided. In one embodiment of the invention, a method is provided for processing a substrate including depositing an anti-reflective coating layer on a surface of the substrate, depositing an adhesion promotion layer on the anti-reflective coating layer, and depositing a resist material on the adhesion promotion layer. In another embodiment of the invention, a semiconductor substrate structure is provided including a dielectric substrate, an amorphous carbon layer deposited on the dielectric layer, an anti-reflective coating layer deposited on the amorphous carbon layer, an adhesion promotion layer deposited on the anti-reflective coating layer, and a resist material deposited on the adhesion promotion layer.

摘要翻译： 提供了具有尺寸在90nm以下的特征尺寸的半导体器件的制造方法和结构。 在本发明的一个实施例中，提供了一种处理衬底的方法，包括在衬底的表面上沉积抗反射涂层，在抗反射涂层上沉积粘合促进层，以及在抗反射涂层上沉积抗蚀剂材料 粘附促进层。 在本发明的另一个实施例中，提供了一种半导体衬底结构，其包括电介质衬底，沉积在电介质层上的无定形碳层，沉积在无定形碳层上的抗反射涂层， 反射涂层和沉积在粘附促进层上的抗蚀剂材料。

公开(公告)号：US08679987B2

公开(公告)日：2014-03-25

申请号：US13468776

申请日：2012-05-10

申请人： Patrick Reilly ,  Shahid Shaikh ,  Tersem Summan ,  Deenesh Padhi ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Bok Hoen Kim ,  Derek R. Witty

发明人： Patrick Reilly ,  Shahid Shaikh ,  Tersem Summan ,  Deenesh Padhi ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Bok Hoen Kim ,  Derek R. Witty

IPC分类号： H01L21/47 ,  H01L21/312

CPC分类号： H01L21/02527 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/31144

摘要： Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.

摘要翻译： 本文所述的实施例涉及一种用于处理衬底的方法。 在一个实施方案中，该方法包括将包含烃源和稀释气体的气体混合物引入位于处理系统内的沉积室中，在沉积室中从约200℃至约200℃的温度和 约700℃以在基底上形成低氢含量的无定形碳层，将基底转移到位于处理系统内的固化室中，而不破坏真空，并在固化温度下将基底暴露于固化室内的UV辐射 高于约200℃

公开(公告)号：US20120015521A1

公开(公告)日：2012-01-19

申请号：US13093679

申请日：2011-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/308 ,  H01L21/32

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。

公开(公告)号：US20110244142A1

公开(公告)日：2011-10-06

申请号：US12750378

申请日：2010-03-30

申请人： SIU F. CHENG ,  Jacob Janzen ,  Deenesh Padhi ,  Bok Hoen Kim

发明人： SIU F. CHENG ,  Jacob Janzen ,  Deenesh Padhi ,  Bok Hoen Kim

IPC分类号： C23C16/513

CPC分类号： H01L21/0273 ,  C23C16/26 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/3065

摘要： Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate.

摘要翻译： 本文描述的实施例通常涉及集成电路的制造，更具体地涉及氮掺杂非晶碳层以及用于在半导体衬底上沉积氮掺杂的非晶碳层的工艺。 在一个实施例中，提供了在衬底上形成氮掺杂非晶碳层的方法。 该方法包括将基板定位在基板处理室中，将含氮烃源引入处理室，将烃源引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体 ，并在衬底上形成氮掺杂的无定形碳层。

公开(公告)号：US07189658B2

公开(公告)日：2007-03-13

申请号：US11123501

申请日：2005-05-04

申请人： Annamalai Lakshmanan ,  Deenesh Padhi ,  Ganesh Balasubramanian ,  Zhenjiang David Cui ,  Daemian Raj ,  Juan Carlos Rocha-Alvarez ,  Francimar Schmitt ,  Bok Hoen Kim

发明人： Annamalai Lakshmanan ,  Deenesh Padhi ,  Ganesh Balasubramanian ,  Zhenjiang David Cui ,  Daemian Raj ,  Juan Carlos Rocha-Alvarez ,  Francimar Schmitt ,  Bok Hoen Kim

IPC分类号： H01L21/31

CPC分类号： C23C16/029 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76829 ,  Y10S438/931

摘要： A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.

摘要翻译： 提供了一种处理衬底的方法，包括在处理室中的衬底上沉积过渡层和电介质层。 过渡层由包括有机硅化合物和氧化气体的处理气体沉积。 在沉积过渡层期间，有机硅化合物的流速升高，使得过渡层具有碳浓度梯度和氧浓度梯度。 过渡层改善了介电层对基底上的下层阻挡层的粘合性。

公开(公告)号：US20130189845A1

公开(公告)日：2013-07-25

申请号：US13354129

申请日：2012-01-19

申请人： Sungjin Kim ,  Deenesh Padhi ,  Song Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

发明人： Sungjin Kim ,  Deenesh Padhi ,  Song Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

IPC分类号： H01L21/311

CPC分类号： H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

公开(公告)号：US20120129351A1

公开(公告)日：2012-05-24

申请号：US12952024

申请日：2010-11-22

申请人： Anthony Konecni ,  Josephine Juhwei Liu ,  Deenesh Padhi ,  Bok Hoen Kim ,  William H. Mc Clintock

发明人： Anthony Konecni ,  Josephine Juhwei Liu ,  Deenesh Padhi ,  Bok Hoen Kim ,  William H. Mc Clintock

IPC分类号： H01L21/467 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/02115 ,  H01L21/02274

摘要： A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels.

摘要翻译： 提供了一种在基板上形成无定形碳层的方法和装置。 具有高应力水平的无定形碳层的第一部分由具有高稀释比的烃前体形成，并且包括任选的胺前体以增加应力升高的氮。 通过降低烃前体的稀释比例和降低或除去胺气体，在第一部分上形成具有低应力水平的第二部分无定形碳层。 可以调节压力，温度和RF功率输入，而不是或除了前体流速，并且不同的前体可用于不同的应力水平。

公开(公告)号：US20110303899A1

公开(公告)日：2011-12-15

申请号：US13158186

申请日：2011-06-10

申请人： Deenesh Padhi ,  Jacob Janzen ,  Shahid Shaikh ,  Bok Hoen Kim ,  Barry Chin

发明人： Deenesh Padhi ,  Jacob Janzen ,  Shahid Shaikh ,  Bok Hoen Kim ,  Barry Chin

IPC分类号： H01L21/20 ,  H01L29/16

CPC分类号： H01L21/0262 ,  H01J37/32091 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L23/373 ,  H01L29/66742 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention are directed toward the deposition of Graphene on a semiconductor substrate. In some embodiments, these processes can occur at low temperature levels during a back end of the line process. For example, Graphene can be deposited in a CVD reactor at a processing temperature that is below 600° C. to protect previously deposited layers that may be susceptible to sustained higher temperatures. Graphene deposition can include the deposition of an underlayer (e.g., cobalt) followed by the flow of a carbon precursor (e.g., acetylene) at the processing temperature. Graphene can then be synthesized with during cooling, an RTP cure, and/or a UV cure.

摘要翻译： 本发明的实施方案涉及在半导体衬底上沉积石墨烯。 在一些实施例中，这些过程可以在线路过程的后端期间以低温水平发生。 例如，石墨烯可以在低于600℃的处理温度下沉积在CVD反应器中，以保护可能易受持续较高温度影响的预先沉积的层。 石墨烯沉积可以包括在加工温度下沉积底层（例如钴），然后沉积碳前体（例如乙炔）。 然后可以在冷却，RTP固化和/或UV固化期间合成石墨烯。