公开(公告)号：US20090051002A1

公开(公告)日：2009-02-26

申请号：US11843047

申请日：2007-08-22

申请人： Roger A. Booth, JR. ,  MaryJane Brodsky ,  Kangguo Cheng ,  Chengwen Pei

发明人： Roger A. Booth, JR. ,  MaryJane Brodsky ,  Kangguo Cheng ,  Chengwen Pei

IPC分类号： H01L29/00 ,  H01L21/44

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin semiconductor layer is formed and patterned on a semiconductor substrate to form a thin semiconductor fuselink on shallow trench isolation and between an anode semiconductor region and a cathode semiconductor region. During metallization, the semiconductor fuselink is converted to a thin metal semiconductor alloy fuselink as all of the semiconductor material in the semiconductor fuselink reacts with a metal to form a metal semiconductor alloy. The inventive electrical fuse comprises the thin metal semiconductor alloy fuselink, a metal semiconductor alloy anode, and a metal semiconductor alloy cathode. The thin metal semiconductor alloy fuselink has a smaller cross-sectional area compared with prior art electrical fuses. Current density within the fuselink and the divergence of current at the interface between the fuselink and the cathode or anode comparable to prior art electrical fuses are obtained with less programming current than prior art electrical fuses.

摘要翻译： 薄半导体层在半导体衬底上形成并图案化以在浅沟槽隔离上以及在阳极半导体区域和阴极半导体区域之间形成薄的半导体熔丝。 在金属化期间，由于半导体软管中的所有半导体材料与金属反应而形成金属半导体合金，所以将半导体熔融金属转换为薄金属半导体合金熔丝。 本发明的电熔丝包括薄金属半导体合金熔丝，金属半导体合金阳极和金属半导体合金阴极。 与现有技术的电熔丝相比，薄金属半导体合金熔体具有较小的横截面积。 与现有技术的电熔丝相比，可以获得与现有技术的电熔丝相当的在熔丝中的电流密度和在熔丝与阴极或阳极之间的界面处的电流发散度，而不是现有技术的电熔丝。