公开(公告)号：US20110235899A1

公开(公告)日：2011-09-29

申请号：US13131496

申请日：2009-11-25

申请人： Koichi Tanaka

发明人： Koichi Tanaka

IPC分类号： H04N13/02 ,  G06K9/00

CPC分类号： G06T7/33 ,  G06T2207/10012 ,  G06T2207/30196 ,  H04N13/10 ,  H04N13/243 ,  H04N13/246

摘要： An apparatus (10) includes a device for acquiring a plurality of images of an identical subject taken from a plurality of viewpoints; a device for selecting a prescribed image as a reference image, selecting an image other than the reference image as a target image from among the images, and detecting feature points from the reference image and corresponding points from the target image to generate pairs of the feature point and corresponding point, wherein feature of the feature point and the corresponding point in the same pair are substantially identical; a device for estimating geometrical transformation parameters for geometrically-transforming the target image such that y-coordinate values of the feature point and the corresponding point included in the same pair are substantially identical, wherein y-direction is orthogonal to a parallax direction of the viewpoints; and a device for geometrically-transforming the target image based on the parameters.

摘要翻译： 一种装置（10），包括从多个视点取得相同对象的多个图像的装置; 用于选择规定图像作为参考图像的装置，从图像中选择除了参考图像之外的图像作为目标图像，以及从参考图像和来自目标图像的对应点检测特征点，以生成特征对 点和对应点，其中特征点和相同对中的对应点的特征基本相同; 用于估计用于几何变换目标图像的几何变换参数的装置，使得包括在同一对中的特征点和对应点的y坐标值基本相同，其中y方向与视点的视差方向正交 ; 以及用于基于参数对目标图像进行几何变换的装置。

公开(公告)号：US07893008B2

公开(公告)日：2011-02-22

申请号：US11990484

申请日：2006-08-16

申请人： Yukiko Kodama ,  Kazushige Hatanaka ,  Koichi Tanaka ,  Hiroko Nakagawa ,  Shogo Moriya ,  Kaoru Osano

发明人： Yukiko Kodama ,  Kazushige Hatanaka ,  Koichi Tanaka ,  Hiroko Nakagawa ,  Shogo Moriya ,  Kaoru Osano

IPC分类号： C40B30/04 ,  C40B40/08 ,  C07H21/04 ,  C12M1/00 ,  C12Q1/68

CPC分类号： C12Q1/6895 ,  C12Q1/6888

摘要： The present invention relates to an instrument, a method and a kit for detecting a microorganism contaminating a subject test sample, which enables one to quickly and accurately identify the microorganism with an easy operation. The instrument for detecting a microorganism according to the present invention relates to a microarray type instrument in which oligonucleotides prepared based on nucleotide sequences specific to the species and genus to which the subject microorganism belongs have been immobilized onto a surface of a substrate. Based on the presence or absence of hybridization of the probes prepared from the test sample with the oligonucleotides immobilized onto the surface of the substrate, the present invention makes it possible to detect and/or identify the microorganism in the test sample easily, quickly and accurately.

摘要翻译： 本发明涉及用于检测污染受检试样的微生物的仪器，方法和试剂盒，其能够以简单的操作快速准确地鉴定微生物。 根据本发明的用于检测微生物的仪器涉及一种微阵列型仪器，其中基于对象微生物属于的物种和属的特异性的核苷酸序列制备的寡核苷酸已被固定在基底的表面上。 基于由测试样品制备的探针与固定在基底表面上的寡核苷酸的杂交的存在或不存在，本发明使得可以容易，快速和准确地检测和/或鉴定测试样品中的微生物 。

公开(公告)号：US07833878B2

公开(公告)日：2010-11-16

申请号：US12162134

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A hydrogen ion-implanted layer is formed on the surface side of a first substrate which is a single-crystal silicon substrate. At least one of the surface of a second substrate, which is a transparent insulating substrate, and the surface of the first substrate is subjected to surface activation treatment, and the two substrates are bonded together. The bonded substrate composed of the single-crystal Si substrate and the transparent insulating substrate thus obtained is mounted on a susceptor and is placed under an infrared lamp. Light having a wave number range including an Si—H bond absorption band is irradiated at the bonded substrate for a predetermined length of time to break the Si—H bonds localized within a “microbubble layer” in the hydrogen ion-implanted layer, thereby separating a silicon thin film layer.

摘要翻译： 在作为单晶硅衬底的第一衬底的表面侧上形成氢离子注入层。 作为透明绝缘基板的第二基板的表面和第一基板的表面中的至少一个进行表面活化处理，并且将两个基板接合在一起。 将由单晶Si衬底和由此获得的透明绝缘衬底构成的键合衬底安装在基座上并放置在红外灯下。 在键合衬底上照射具有Si-H键吸收带的波数范围的光，以预定的时间长度，以破坏位于氢离子注入层中的“微泡层”内的Si-H键，从而分离 硅薄膜层。

公开(公告)号：US07799589B2

公开(公告)日：2010-09-21

申请号：US12076617

申请日：2008-03-20

申请人： Shoji Akiyama ,  Yoshihiro Kuboto ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Yoshihiro Kuboto ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L21/00

CPC分类号： G02B6/132 ,  G02B6/1347 ,  G02F1/0126 ,  G02F1/025 ,  G02F2202/105 ,  G02F2203/48 ,  Y10S438/967

摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 μm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.

摘要翻译： 提供一种具有可以调制通过光波导引导的信号光的非常简单结构的光波导装置。 将光致抗蚀剂13施加到SOI膜12的上侧，形成光致抗蚀剂掩模14，并且通过蚀刻除去未被光致抗蚀剂掩模14覆盖的区域中的SOI膜，以获得具有 单晶硅芯。 此外，在石英基板20的背面侧设置能够用波长为1.1μm以下的光照射单晶硅芯的发光装置，以提供光波导装置。 当发光器件30不施加光时，通过光波导15引导的光被原样引导。 然而，当发光器件30在照射区域16中施加光以形成每对电子和空穴时，通过光波导15引导的光被一对电子和空穴吸收，从而能够切换 （调制），用于根据来自发光装置30的光的施加的存在/不存在（ON或OFF）来接通/关闭光信号。

公开(公告)号：US20100233866A1

公开(公告)日：2010-09-16

申请号：US12161821

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/46 ,  H01L21/44

CPC分类号： H01L21/76254 ,  C30B33/04 ,  H01L21/265

摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

摘要翻译： 氮化物类半导体晶体和第二基板结合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层分离氮化物基半导体晶体的低位错密度区域，从而将低位错密度区域的表面层部分转移（剥离）到 第二基板。 此时，低位错密度区域的下层部分停留在第一基板上，而不会转移到第二基板上。 将低位错密度区域的表面层部分转印到其上的第二基板被定义为可通过本发明的制造方法获得的半导体基板，并且第一基板在其上具有低位错层的下层部分 密度区域残留被重新用作外延生长的衬底。

公开(公告)号：US20100134952A1

公开(公告)日：2010-06-03

申请号：US12656221

申请日：2010-01-21

申请人： Koichi Tanaka

发明人： Koichi Tanaka

IPC分类号： H01G4/06

CPC分类号： H05K1/162 ,  H01L21/76807 ,  H01L21/76838 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L28/40 ,  H01L2924/0002 ,  H05K3/0023 ,  H05K3/005 ,  H05K3/107 ,  H05K3/4602 ,  H05K3/465 ,  H05K3/4652 ,  H05K2201/0187 ,  H05K2201/09509 ,  H05K2203/0108 ,  H05K2203/0551 ,  H05K2203/1189 ,  H01L2924/00

摘要： A method of manufacturing a capacitor device of the present invention, includes the steps of, forming an insulating layer on a substrate, forming a recess portion in the insulating layer by an imprinting process, forming a lower electrode by filling a metal layer in the recess portion in the insulating layer, forming a photosensitive dielectric layer on the lower electrode, forming an upper electrode on the dielectric layer, and forming a dielectric layer pattern under the upper electrode by exposing/developing the dielectric layer while using the upper electrode as a mask.

摘要翻译： 制造本发明的电容器器件的方法包括以下步骤：在衬底上形成绝缘层，通过刻印工艺在绝缘层中形成凹陷部分，通过在金属层的凹部中填充金属层形成下电极 在所述下电极上形成感光介电层，在所述电介质层上形成上电极，并且在使用所述上电极作为掩模的同时，通过使所述电介质层曝光/显影来在所述上电极的下方形成电介质层图案 。

公开(公告)号：US07610380B2

公开(公告)日：2009-10-27

申请号：US10521624

申请日：2004-04-05

申请人： Tatsuya Igarashi ,  Norifumi Kikkawa ,  Yoichi Kobori ,  Takehiko Morita ,  Yasuaki Honda ,  Koichi Tanaka

发明人： Tatsuya Igarashi ,  Norifumi Kikkawa ,  Yoichi Kobori ,  Takehiko Morita ,  Yasuaki Honda ,  Koichi Tanaka

IPC分类号： G06F15/173

CPC分类号： H04L29/12783 ,  H04L12/2803 ,  H04L61/35 ,  H04L63/10 ,  H04L67/02 ,  H04L69/324 ,  H04L2463/103

摘要： An apparatus and a method which enable to execute different access controls based on setting modes are realized. A MAC address table in which a manually registered client MAC address and an automatically registered client MAC address are registered in forms to be able to distinguish each other is set. If an access control mode is an automatic registration access control mode, a MAC addresses of an access requesting client is registered until the number of the MAC address reaches a defined limit number of registration: N of the MAC address table, and the access is allowed under the condition of the registration; or if the access control mode is a registered device access control mode, the access is allowed under the condition that the client MAC address is registered in the MAC address table as the manually registered MAC address.

摘要翻译： 实现了能够基于设定模式执行不同的访问控制的装置和方法。 设置MAC地址表，其中手动注册的客户端MAC地址和自动注册的客户端MAC地址被登记在能够彼此区分的表单中。 如果访问控制模式是自动注册访问控制模式，则登记访问请求客户端的MAC地址，直到MAC地址的数量达到定义的限制的注册数量：N的MAC地址表，并且访问被允许 在注册条件下; 或者如果访问控制模式是注册设备访问控制模式，则在客户端MAC地址被注册在MAC地址表中作为手动注册的MAC地址的条件下允许访问。

公开(公告)号：US20090057791A1

公开(公告)日：2009-03-05

申请号：US12281886

申请日：2007-03-12

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762 ,  H01L29/66 ,  H01L29/02

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer.

摘要翻译： 对已经形成有离子注入层的单晶Si衬底和石英衬底的各个接合表面施加等离子体处理或臭氧处理，并将衬底接合在一起。 然后，对键合衬底施加冲击力，沿着氢离子注入层从单晶硅的主体部分剥离硅薄膜，从而获得在石英衬底上具有SOI层的SOI衬底。 在如此获得的SOI衬底的石英衬底的表面上形成诸如孔或微流通道的凹部，从而应用DNA芯片或微流体芯片所需的工艺。 在SOI层中形成用于分析/评价附着/保持在该凹部的样品的硅半导体元件。

公开(公告)号：US20090032831A1

公开(公告)日：2009-02-05

申请号：US12076617

申请日：2008-03-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L33/00

CPC分类号： G02B6/132 ,  G02B6/1347 ,  G02F1/0126 ,  G02F1/025 ,  G02F2202/105 ,  G02F2203/48 ,  Y10S438/967

摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 μm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.

摘要翻译： 提供一种具有可以调制通过光波导引导的信号光的非常简单结构的光波导装置。 将光致抗蚀剂13施加到SOI膜12的上侧，形成光致抗蚀剂掩模14，并且通过蚀刻除去未被光致抗蚀剂掩模14覆盖的区域中的SOI膜，以获得具有 单晶硅芯。 此外，在石英基板20的背面侧设置能够用波长为1.1μm以下的光照射单晶硅芯的发光装置，以提供光波导装置。 当发光器件30不施加光时，通过光波导15引导的光被原样引导。 然而，当发光器件30在照射区域16中施加光以形成每对电子和空穴时，通过光波导15引导的光被一对电子和空穴吸收，从而能够切换 （调制），用于根据来自发光装置30的光的施加的存在/不存在（ON或OFF）来接通/关闭光信号。

公开(公告)号：US20080254597A1

公开(公告)日：2008-10-16

申请号：US12076923

申请日：2008-03-25

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76256 ,  H01L27/12

摘要： A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface of a single-crystal Si substrate 10 to form a high-concentration boron added p layer 11 having a depth L in the outermost front surface, the single-crystal Si substrate 10 is appressed against a quartz substrate 20 to be bonded at a room temperature. Chemical etching is performed with respect to the single-crystal Si substrate 10 from a back surface thereof to set its thickness to L or below. A heat treatment is carried out with respect to an SOI substrate in a hydrogen containing atmosphere to outwardly diffuse B from the high-concentration boron added p layer 11, thereby acquiring a boron added p layer 12 having a desired resistance value. During this heat treatment, B in an Si crystal is diffused to the outside of the crystal in a state where it is coupled with hydrogen in the atmosphere, and a B concentration in the high-concentration boron added p layer 11 is reduced. In regard to a heat treatment temperature at this time, in view of a softening point of the insulative substrate, an upper limit of the heat treatment temperature is set to 1250° C., and 700° C. is selected as a lower limit of the temperature at which B can be diffused.

摘要翻译： 提供一种制造SOI衬底的方法，该SOI衬底具有通过蚀刻方法减小的膜厚度的硅层的衬底表面中的膜厚度均匀性和电阻率均匀性优异的SOI衬底。 在将B离子注入到单晶Si衬底10的前表面中以形成在最外表面具有深度L的高浓度硼添加p层11之后，将单晶Si衬底10贴在石英 基板20在室温下结合。 从其背面对单晶硅基板10进行化学蚀刻，将其厚度设定为L以下。 对含氢气氛中的SOI衬底进行热处理，从高浓度硼添加p层11向外扩散B，从而获得具有所需电阻值的添加硼的p层12。 在该热处理中，Si结晶中的B在与大气中的氢相结合的状态下扩散到晶体外部，并且在高浓度硼添加p层11中的B浓度降低。 就此时的热处理温度而言，考虑到绝缘基板的软化点，将热处理温度的上限设定为1250℃，选择700℃为下限值 B可以扩散的温度。