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    Ohmic contact on a p-type principal surface tilting with respect to the c-plane
    21.
    发明授权
    Ohmic contact on a p-type principal surface tilting with respect to the c-plane 有权
    在相对于c面倾斜的p型主表面上的欧姆接触

    公开(公告)号：US08227898B2

    公开(公告)日：2012-07-24

    申请号：US12836222

    申请日：2010-07-14

    申请人： Shinji Tokuyama ,  Masahiro Adachi ,  Takashi Kyono ,  Yoshihiro Saito

    发明人： Shinji Tokuyama ,  Masahiro Adachi ,  Takashi Kyono ,  Yoshihiro Saito

    IPC分类号： H01L29/20 ,  H01L29/04

    CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32

    摘要： A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surface 13a of a p-type semiconductor region 13 extends along a plane tilting from a c-axis (axis ) of hexagonal group-III nitride. A metal layer 15 is deposited on the principal surface 13a of the p-type semiconductor region 13. The metal layer 15 and the p-type semiconductor region 13 are separated by an interface 17 such that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surface 13a comprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interface 17 avoids an increase in amount of oxide after the formation of the metal layer 15 for the electrode.

    摘要翻译： 半导体器件在从c面倾斜的p型主表面上具有令人满意的欧姆接触。 p型半导体区域13的主表面13a沿着从六方晶III族氮化物的c轴（轴<0001>）倾斜的平面延伸。 金属层15沉积在p型半导体区域13的主表面13a上。金属层15和p型半导体区域13被界面17分离，使得金属层用作非合金电极 。 由于六方晶III族氮化物含有镓作为III族元素，所以与六方晶III族氮化物的c面相比，包含六方晶III族氮化物的主表面13a更易于氧化。 界面17避免了形成用于电极的金属层15之后的氧化物的量的增加。

    COMPOUND SEMICONDUCTOR DEVICE
    22.
    发明申请
    COMPOUND SEMICONDUCTOR DEVICE 失效
    化合物半导体器件

    公开(公告)号：US20110108853A1

    公开(公告)日：2011-05-12

    申请号：US12835003

    申请日：2010-07-13

    申请人： Masahiro ADACHI ,  Shinji Tokuyama ,  Koji Katayama

    发明人： Masahiro ADACHI ,  Shinji Tokuyama ,  Koji Katayama

    IPC分类号： H01L29/24 ,  H01L29/20

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/34

    摘要： A compound semiconductor device having reduced contact resistance to an electrode is provided. The compound semiconductor device includes an n-substrate 3 comprising a hexagonal compound semiconductor GaN and having surfaces S1 and S2; an n-electrode 13 formed on the surface S1 of the n-substrate 3; a layered product having an n-cladding layer 5, an active layer 7, a p-cladding layer 9, and a contact layer 11 formed on the surface S2 of the n-substrate 3; and a p-electrode 15 formed on the p-cladding layer 9. The number of N atoms contained on the surface S1 of the n-substrate 3 is more than the number of Ga atoms contained on the surface S1. The electrode formed on the surface S1 is an n-electrode 13. The surface S1 has an oxygen concentration of not more than 5 atomic percent. The number of Ga atoms contained on the surface S3 of the contact layer 11 is more than the number of N atoms contained on the surface S3. The electrode formed on the surface S3 is a p-electrode 15. The surface S3 has an oxygen concentration of not more than 5 atomic percent.

    摘要翻译： 提供具有降低的与电极的接触电阻的化合物半导体器件。 该化合物半导体器件包括包含六方晶系化合物半导体GaN并具有表面S1和S2的n衬底3; 形成在n基板3的表面S1上的n电极13; 具有形成在n基板3的表面S2上的n包层5，有源层7，p包覆层9和接触层11的层叠体， 以及形成在p包覆层9上的p电极15.包含在n基板3的表面S1上的N原子的数量大于表面S1上包含的Ga原子的数量。 形成在表面S1上的电极是n电极13.表面S1的氧浓度不大于5原子％。 接触层11的表面S3上所含的Ga原子数多于表面S3所含的N原子数。 形成在表面S3上的电极是p电极15.表面S3的氧浓度不大于5原子％。

    Compound semiconductor device
    23.
    发明授权
    Compound semiconductor device 失效
    复合半导体器件

    公开(公告)号：US08581296B2

    公开(公告)日：2013-11-12

    申请号：US12835003

    申请日：2010-07-13

    申请人： Masahiro Adachi ,  Shinji Tokuyama ,  Koji Katayama

    发明人： Masahiro Adachi ,  Shinji Tokuyama ,  Koji Katayama

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/34

    摘要： A compound semiconductor device having reduced contact resistance to an electrode is provided. The compound semiconductor device includes an n-substrate 3 comprising a hexagonal compound semiconductor GaN and having surfaces S1 and S2; an n-electrode 13 formed on the surface S1 of the n-substrate 3; a layered product having an n-cladding layer 5, an active layer 7, a p-cladding layer 9, and a contact layer 11 formed on the surface S2 of the n-substrate 3; and a p-electrode 15 formed on the p-cladding layer 9. The number of N atoms contained on the surface S1 of the n-substrate 3 is more than the number of Ga atoms contained on the surface S1. The electrode formed on the surface S1 is an n-electrode 13. The surface S1 has an oxygen concentration of not more than 5 atomic percent. The number of Ga atoms contained on the surface S3 of the contact layer 11 is more than the number of N atoms contained on the surface S3. The electrode formed on the surface S3 is a p-electrode 15. The surface S3 has an oxygen concentration of not more than 5 atomic percent.

    摘要翻译： 提供了具有降低的与电极的接触电阻的化合物半导体器件。 该化合物半导体器件包括包含六方晶系化合物半导体GaN并具有表面S1和S2的n衬底3; 形成在n基板3的表面S1上的n电极13; 具有形成在n基板3的表面S2上的n包层5，有源层7，p包覆层9和接触层11的层叠体， 以及形成在p包覆层9上的p电极15.包含在n基板3的表面S1上的N原子的数量大于表面S1上包含的Ga原子的数量。 形成在表面S1上的电极是n电极13.表面S1的氧浓度不大于5原子％。 接触层11的表面S3上所含的Ga原子数多于表面S3所含的N原子数。 形成在表面S3上的电极是p电极15.表面S3的氧浓度不大于5原子％。

    Heat-stable D-aminoacylase
    27.
    发明授权
    Heat-stable D-aminoacylase 失效

    公开(公告)号：US06596528B2

    公开(公告)日：2003-07-22

    申请号：US09921156

    申请日：2001-08-02

    申请人： Shinji Tokuyama ,  Akinobu Matsuyama

    发明人： Shinji Tokuyama ,  Akinobu Matsuyama

    IPC分类号： C12N980

    CPC分类号： C12R1/465 ,  C12N9/80 ,  C12P13/04

    摘要： The present invention provides a novel D-aminoacylase, as well as method for producing a D-amino acid using the same. In order to achieve the above objective, the present inventors have succeeded in purifying heat-stable D-aminoacylase from microorganisms belonging to the genus Streptomyces by combining various purification methods. Furthermore, the present inventors found that the purified heat-stable D-aminoacylase is useful in industrial production of D-amino acids. By utilizing the heat-stable D-aminoacylase, it is possible to readily and efficiently produce the corresponding D-amino acids from N-acetyl-DL-amino acids (for example, N-acetyl-DL-methionine, N-acetyl-DL-valine, N-acetyl-DL-tryptophan, N-acetyl-DL-phenylalanine, N-acetyl-DL-alanine, N-acetyl-DL-leucine, and so on).

    Heat-stable D-aminoacylase
    29.
    发明授权
    Heat-stable D-aminoacylase 失效
    热稳定的D-氨基酸酰基酶

    公开(公告)号：US06902915B2

    公开(公告)日：2005-06-07

    申请号：US10361509

    申请日：2003-02-07

    申请人： Shinji Tokuyama ,  Akinobu Matsuyama

    发明人： Shinji Tokuyama ,  Akinobu Matsuyama

    IPC分类号： C12N15/09 ,  C12N1/20 ,  C12N1/21 ,  C12N9/80 ,  C12N15/55 ,  C12P13/04 ,  C12P13/06 ,  C12P13/12 ,  C12P13/20 ,  C12P13/22 ,  C12R1/465 ,  C12N9/78 ,  C12P13/08

    CPC分类号： C12R1/465 ,  C12N9/80 ,  C12P13/04

    摘要： The present invention provides a novel D-aminoacylase, as well as method for producing a D-amino acid using the same. In order to achieve the above objective, the present inventors have succeeded in purifying heat-stable D-aminoacylase from microorganisms belonging to the genus Streptomyces by combining various purification methods. Furthermore, the present inventors found that the purified heat-stable D-aminoacylase is useful in industrial production of D-amino acids. By utilizing the heat-stable D-aminoacylase, it is possible to readily and efficiently produce the corresponding D-amino acids from N-acetyl-DL-amino acids (for example, N-acetyl-DL-methionine, N-acetyl-DL-valine, N-acetyl-DL-tryptophan, N-acetyl-DL-phenylalanine, N-acetyl-DL-alanine, N-acetyl-DL-leucine, and so on).

    摘要翻译： 本发明提供了一种新的D-氨基酸酰基酶，以及使用其制备D-氨基酸的方法。 为了实现上述目的，本发明人通过组合各种纯化方法成功地从属于链霉菌属的微生物纯化热稳定的D-氨基酰化酶。 此外，本发明人发现纯化的热稳定性D-氨基酸酰基酶可用于工业生产D-氨基酸。 通过利用热稳定的D-氨基酸酰化酶，可以容易且有效地从N-乙酰基-DL-氨基酸（例如，N-乙酰基-DL-甲硫氨酸，N-乙酰基-DL- 缬氨酸，N-乙酰基-DL-色氨酸，N-乙酰基-DL-苯丙氨酸，N-乙酰基-DL-丙氨酸，N-乙酰基-DL-亮氨酸等）。