公开(公告)号：US5546205A

公开(公告)日：1996-08-13

申请号：US249624

申请日：1994-05-25

申请人： Osamu Sukegawa ,  Hirofumi Ihara

发明人： Osamu Sukegawa ,  Hirofumi Ihara

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/133

CPC分类号： G02F1/136213

摘要： In an active matrix liquid crystal display panel, each pixel electrode is connected to a first drain bus line through a thin film transistor which is formed adjacent to an intersection between the first drain bus line and an orthogonal gate bus line. A compensating capacitor lower electrode extends from the gate bus line at a position near to a second drain bus line which is adjacent to the pixel electrode in such a manner that the pixel electrode is positioned between the first and second drain bus lines. A compensating capacitor upper electrode is formed integrally with a source electrode of the thin film transistor, to extend along the pixel electrode so as to overlap above the compensating capacitor lower electrode through an insulator layer. Thus, a compensating capacitor is formed of the compensating capacitor lower and upper electrodes and is connected to a gate-source capacitance of the thin film transistor. A change in the gate-source capacitance caused by the positional deviation in the alignment between a gate electrode and the source electrode of the thin film transistor can be compensated by the inverse change in the capacitance of the associated compensating capacitor, without decreasing the aperture ratio of the pixel.

摘要翻译： 在有源矩阵液晶显示面板中，每个像素电极通过与第一排出母线和正交栅极总线之间的交点相邻形成的薄膜晶体管连接到第一漏极总线。 补偿电容器下电极在靠近与像素电极相邻的第二漏极总线的位置处从栅极总线延伸，使得像素电极位于第一和第二漏极总线之间。 补偿电容器上电极与薄膜晶体管的源电极一体形成，沿着像素电极延伸，以通过绝缘体层与补偿电容器下电极重叠。 因此，补偿电容器由补偿电容器下电极和上电极形成，并连接到薄膜晶体管的栅极 - 源极电容。 由薄膜晶体管的栅电极和源电极之间的对准位置偏移引起的栅源电容的变化可以通过相关的补偿电容器的电容的反向变化来补偿，而不会降低开口率 的像素。

公开(公告)号：US5426313A

公开(公告)日：1995-06-20

申请号：US231482

申请日：1994-04-22

申请人： Osamu Sukegawa ,  Hirofumi Ihara

发明人： Osamu Sukegawa ,  Hirofumi Ihara

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/78 ,  H01L29/786 ,  G02F1/133

CPC分类号： G02F1/136209

摘要： In a thin film transistor formed by a gate electrode formed on a transparent insulating substrate, a semiconductor active layer opposing the gate electrode, a drain electrode, and a source electrode connected to a transparent pixel electrode, an optical shield layer is located so as to approximately surround the semiconductor active layer.

摘要翻译： 在由形成在透明绝缘基板上的栅电极形成的薄膜晶体管中，与栅电极相对的半导体有源层，漏电极和与透明像素电极连接的源电极，光屏蔽层位于 大致围绕半导体活性层。